Shengyan Shang
Dalian University of Technology
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Publication
Featured researches published by Shengyan Shang.
international conference on electronic packaging technology | 2016
Anil Kunwar; Julien Givernaud; Haoran Ma; Zhixian Meng; Shengyan Shang; Yunpeng Wang; Haitao Ma
The temperature and velocity distribution during the transient melting phase change in Sn-0.7Cu solder alloy has been modelled using finite element method. The simulation of melting front dynamics has been performed by an Eulerian method, commonly known as enthalpy method. CALPHAD technique is utilized for the computation of enthalpy of the solder material. The flow in the liquid regime of the solder is assumed incompressible and natural convection effects are incorporated through the Boussinesq approximation. The asymptotic viscosity is employed for the mushy zone. For a horizontal finite temperature gradient imposed on the square domain, the mushy zone is thinner at the upper half whereas thicker at the lower of the initially liquid region. Consequently, the melting front within the temperature range 500 K - 503 K moves faster towards the solid in the upper portion of the geometry. The velocity at the peripherial zones of the liquid undergoing convection flow reaches its maximum magnitude of 13 mm/s.
international conference on electronic packaging technology | 2017
Anil Kunwar; Michael Tonks; Shengyan Shang; Xueguan Song; Yunpeng Wang; Haitao Ma
As the electronic packaging and fabrication industries for solar PV cells assembly or panels are making endeavours in using Pb-free solder joints, the reliability of these joints can be taken as an important research topic. Among several aspects, the control of void formation, growth and evolution in lead-free Sn-based solders can be achieved if the underlying mechanism for such phenomena can be modeled. This study employs a quantitative polynomial free energy based phase field method to model the motion and evolution of void in Sn material under thermal gradient. The effects of imposed temperature gradient to the overall migration rate and profile of the void has been assessed in the finite element model.
Metals and Materials International | 2018
Shengyan Shang; Anil Kunwar; Jinye Yao; Yanfeng Wang; Haitao Ma; Yunpeng Wang
In order to investigate the effect of TiO2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}
international conference on electronic packaging technology | 2017
Shengyan Shang; Anil Kunwar; Yingchao Wu; Haitao Ma
Intermetallics | 2018
Anil Kunwar; Bingfeng Guo; Shengyan Shang; Peter Råback; Yunpeng Wang; Jun Chen; Haitao Ma; Xueguan Song; Ning Zhao
\text {TiO}_{2}
Microelectronics Reliability | 2018
Anil Kunwar; Shengyan Shang; Peter Råback; Yunpeng Wang; Julien Givernaud; Jun Chen; Haitao Ma; Xueguan Song; Ning Zhao
Applied Physics A | 2018
Shengyan Shang; Anil Kunwar; Yanfeng Wang; Xiao Qi; Haitao Ma; Yunpeng Wang
\end{document} nanoparticles on growth behavior of interfacial Cu6Sn5\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}
Intermetallics | 2018
H.R. Ma; Anil Kunwar; Shengyan Shang; Chengrong Jiang; Yanfeng Wang; Haoran Ma; Nan Zhao
international conference on electronic packaging technology | 2018
Xiao Qi; Haoran Ma; Ru Huang; Jinye Yao; Shengyan Shang; Anil; Yunpeng Wang; Haitao Ma
\text {Cu}_6\text {Sn}_5
international conference on electronic packaging technology | 2018
Shengyan Shang; Anil Kunwar; Yanfeng Wang; Jinye Yao; Haitao Ma; Yunpeng Wang