Sherman Jun Rong Tan

Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass

We report the fast growth of high-quality millimeter-size monolayer MoSe2 crystals on molten glass using an ambient pressure CVD system. We found that the isotropic surface of molten glass suppresses nucleation events and greatly improves the growth of large crystalline domains. Triangular monolayer MoSe2 crystals with sizes reaching ∼2.5 mm, and with a room-temperature carrier mobility up to ∼95 cm2/(V·s), can be synthesized in 5 min. The method can also be used to synthesize millimeter-size monolayer MoS2 crystals. Our results demonstrate that liquid-state glass is a highly promising substrate for the low-cost growth of high-quality large-size 2D transition metal dichalcogenides (TMDs).

Surface Functionalization of Black Phosphorus via Potassium toward High-Performance Complementary Devices

Two-dimensional black phosphorus configured field-effect transistor devices generally show a hole-dominated ambipolar transport characteristic, thereby limiting its applications in complementary electronics. Herein, we demonstrate an effective surface functionalization scheme on few-layer black phosphorus, through in situ surface modification with potassium, with a view toward high performance complementary device applications. Potassium induces a giant electron doping effect on black phosphorus along with a clear bandgap reduction, which is further corroborated by in situ photoelectron spectroscopy characterizations. The electron mobility of black phosphorus is significantly enhanced to 262 (377) cm2 V-1 s-1 by over 1 order of magnitude after potassium modification for two-terminal (four-terminal) measurements. Using lithography technique, a spatially controlled potassium doping technique is developed to establish high-performance complementary devices on a single black phosphorus nanosheet, for example, the p-n homojunction-based diode achieves a near-unity ideality factor of 1.007 with an on/off ratio of ∼104. Our findings coupled with the tunable nature of in situ modification scheme enable black phosphorus as a promising candidate for further complementary electronics.

Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film

The catalytic and magnetic properties of molybdenum disulfide (MoS2) are significantly enhanced by the presence of edge sites. One way to obtain a high density of edge sites in a two-dimensional (2D) film is by introducing porosity. However, the large-scale bottom-up synthesis of a porous 2D MoS2 film remains challenging and the correlation of growth conditions to the atomic structures of the edges is not well understood. Here, using molecular beam epitaxy, we prepare wafer-scale nanoporous MoS2 films under conditions of high Mo flux and study their catalytic and magnetic properties. Atomic-resolution electron microscopy imaging of the pores reveals two new types of reconstructed Mo-terminated edges, namely, a distorted 1T (DT) edge and the Mo-Klein edge. Nanoporous MoS2 films are magnetic up to 400 K, which is attributed to the presence of Mo-terminated edges with unpaired electrons, as confirmed by density functional theory calculation. The small hydrogen adsorption free energy at these Mo-terminated edges leads to excellent activity for the hydrogen evolution reaction.

Substoichiometric Molybdenum Sulfide Phases with Catalytically Active Basal Planes

Molybdenum sulfide (MoS2) is widely recognized for its catalytic activities where the edges of the crystals turn over reactions. Generating sulfur defects on the basal plane of MoS2 can improve its catalytic activity, but generally, there is a lack of model systems for understanding metal-centered catalysis on the basal planes. Here, we synthesized a new phase of substoichiometric molybdenum sulfide (s-MoSx) on a sulfur-enriched copper substrate. The basal plane of s-MoSx contains chemically reactive Mo-rich sites that can undergo dynamic dissociative adsorption/desorption processes with molecular hydrogen, thus demonstrating its usefulness for hydrogen-transfer catalysis. In addition, scanning tunneling microscopy was used to monitor surface-directed Ullmann coupling of 2,8-dibromo-dibenzothiophene molecules on s-MoSx nanosheets, where the 4-fold symmetric surface sites on s-MoSx direct C-C coupling to form cyclic tetramers with high selectivity.

Quasi‐Monolayer Black Phosphorus with High Mobility and Air Stability

Black phosphorus (BP) exhibits thickness-dependent band gap and high electronic mobility. The chemical intercalation of BP with alkali metal has attracted attention recently due to the generation of universal superconductivity regardless of the type of alkali metals. However, both ultrathin BP, as well as alkali metal-intercalated BP, are highly unstable and corrode rapidly under ambient conditions. This study demonstrates that alkali metal hydride intercalation decouples monolayer to few layers BP from the bulk BP, allowing an optical gap of ≈1.7 eV and an electronic gap of 1.98 eV to be measured by photoluminescence and electron energy loss spectroscopy at the intercalated regions. Raman and transport measurements confirm that chemically intercalated BP exhibits enhanced stability, while maintaining a high hole mobility of up to ≈800 cm2 V-1 s-1 and on/off ratio exceeding 103 . The use of alkali metal hydrides as intercalants should be applicable to a wide range of layered 2D materials and pave the way for generating highly stable, quasi-monolayer 2D materials.

Two-Dimensional Polymer Synthesized via Solid-State Polymerization for High-Performance Supercapacitors

Two-dimensional (2-D) polymer has properties that are attractive for energy storage applications because of its combination of heteroatoms, porosities and layered structure, which provides redox chemistry and ion diffusion routes through the 2-D planes and 1-D channels. Here, conjugated aromatic polymers (CAPs) were synthesized in quantitative yield via solid-state polymerization of phenazine-based precursor crystals. By choosing flat molecules (2-TBTBP and 3-TBQP) with different positions of bromine substituents on a phenazine-derived scaffold, C-C cross coupling was induced following thermal debromination. CAP-2 is polymerized from monomers that have been prepacked into layered structure (3-TBQP). It can be mechanically exfoliated into micrometer-sized ultrathin sheets that show sharp Raman peaks which reflect conformational ordering. CAP-2 has a dominant pore size of ∼0.8 nm; when applied as an asymmetric supercapacitor, it delivers a specific capacitance of 233 F g-1 at a current density of 1.0 A g-1, and shows outstanding cycle performance.

Temperature- and Phase-Dependent Phonon Renormalization in 1T′-MoS2

Polymorph engineering of 2H-MoS2, which can be achieved by alkali metal intercalation to obtain either the mixed 2H/1T phases or a homogeneous 1T phase, has received wide interest recently, since this serves as an effective route to tune the electrical and catalytic properties of MoS2. As opposed to an idealized single crystal-to-single crystal phase conversion, the 2H to 1T phase conversion results in crystal domain size reduction as well as strained lattices, although how these develop with composition is not well understood. Herein, the evolution of the phonon modes in Li-intercalated 1T-MoS2 (Li xMoS2) are investigated as a function of different 1T-2H compositions. We observed that the strain evolution in the mixed phases is revealed by the softening of four Raman modes, Bg ( J1), Ag ( J3), E12g, and A1g, with increasing 1T phase composition. Additionally, the first-order temperature coefficients of the 1T phonon mode vary linearly with increasing 1T composition, which is explained by increased electron-phonon and strain-phonon coupling.

Observation of Gap Opening in 1T′ Phase MoS2 Nanocrystals

Two-dimensional (2D) transition metal dichalcogenides (TMDs) manifest in various polymorphs, which deliver different electronic properties; the most prominent among them include the semiconducting 2H phase and metallic 1T (or distorted 1T phase) phase. Alkali metal intercalation or interface strain has been used to induce semiconductor-to-metal transition in a monolayer MoS2 sheet, leading to exotic quantum states or improved performance in catalysis. However, the direct growth of 1T or 1T phase MoS2 is challenging due to its metastability. Here, we report MBE growth of isolated 1T and 2H MoS2 nanocrystals on a Au substrate; these nanocrystals can be differentiated unambiguously by their electronic states using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). By studying the initial stages of nucleation during molecular beam epitaxy (MBE) of MoS2, we could identify atomic clusters (30-50 atoms) with intralayer stacking corresponding to 1T and 2H separately, which suggests a deterministic growth mechanism from initial nuclei. Furthermore, a topological insulator type behavior was observed for the 1T MoS2 crystals, where an energy gap opening of 80 meV was measured by STS in the basal plane at 5 K, with the edge of the nanocrystals remaining metallic.

Stable Molecular Diodes Based on π–π Interactions of the Molecular Frontier Orbitals with Graphene Electrodes

In molecular electronics, it is important to control the strength of the molecule-electrode interaction to balance the trade-off between electronic coupling strength and broadening of the molecular frontier orbitals: too strong coupling results in severe broadening of the molecular orbitals while the molecular orbitals cannot follow the changes in the Fermi levels under applied bias when the coupling is too weak. Here, a platform based on graphene bottom electrodes to which molecules can bind via π-π interactions is reported. These interactions are strong enough to induce electronic function (rectification) while minimizing broadening of the molecular frontier orbitals. Molecular tunnel junctions are fabricated based on self-assembled monolayers (SAMs) of Fc(CH2 )11 X (Fc = ferrocenyl, X = NH2 , Br, or H) on graphene bottom electrodes contacted to eutectic alloy of gallium and indium top electrodes. The Fc units interact more strongly with graphene than the X units resulting in SAMs with the Fc at the bottom of the SAM. The molecular diodes perform well with rectification ratios of 30-40, and they are stable against bias stressing under ambient conditions. Thus, tunnel junctions based on graphene with π-π molecule-electrode coupling are promising platforms to fabricate stable and well-performing molecular diodes.

Molecular Beam Epitaxy of Two-Dimensional In2Se3 and its Giant Electroresistance Switching in Ferroresistive Memory Junction

Ferroelectric thin film has attracted great interest for nonvolatile memory applications and can be used in either ferroelectric Schottky diodes or ferroelectric tunneling junctions due to its promise of fast switching speed, high on-to-off ratio, and nondestructive readout. Two-dimensional α-phase indium selenide (In2Se3), which has a modest band gap and robust ferroelectric properties stabilized by dipole locking, is an excellent candidate for multidirectional piezoelectric and switchable photodiode applications. However, the large-scale synthesis of this material is still elusive, and its performance as a ferroresistive memory junction is rarely reported. Here, we report the low-temperature molecular-beam epitaxy (MBE) of large-area monolayer α-In2Se3 on graphene and demonstrate the use of α-In2Se3 on graphene in ferroelectric Schottky diode junctions by employing high-work-function gold as the top electrode. The polarization-modulated Schottky barrier formed at the interface exhibits a giant electroresistance ratio of 3.9 × 106 with a readout current density of >12 A/cm2, which is more than 200% higher than the state-of-the-art technology. Our MBE growth method allows a high-quality ultrathin film of In2Se3 to be heteroepitaxially grown on graphene, thereby simplifying the fabrication of high-performance 2D ferroelectric junctions for ferroresistive memory applications.