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Dive into the research topics where Shi Wangzhou is active.

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Featured researches published by Shi Wangzhou.


Chinese Physics B | 2014

Effect of additional silicon on titanium/4H-SiC contacts properties

Zhang Yongping; Chen Zhizhan; Lu Wuyue; Tan Jiahui; Cheng Yue; Shi Wangzhou

The Ti electrode was deposited on the (000) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.


Chinese Physics B | 2015

Magnetocaloric effect study of SrFe0.8Co0.2O3 single crystal prepared under high pressure

Xia Hailiang; Qin Xiaomei; Yang Junye; Yin Yunyu; Dai Jian-Hong; Shi Wangzhou; Long Youwen

A high-quality SrFe0.8Co0.2O3 single crystal is prepared by combining floating-zone and high-pressure treatment methods. Its Magnetocaloric effect is investigated by magnetic measurements. A paramagnetism-to-ferromagnetism transition is found at about 270 K and this transition is a second-order one in nature as confirmed by Arrott plots. The saturated moment obtained at 2 K and 7 T is 3.63 μB/f.u. The maximal value of magnetic entropy change measured at 5 T is about 4.0 Jkg−1K−1. The full wide at half maximum for a magnetic entropy change peak observed in SrFe0.8Co0.2O3 is considerably large. As a consequence, the relative cooling power value of SrFe0.8Co0.2O3 obtained at 5 T is 331 J/kg, which is greatly higher than those observed in other perovskite oxides. The present work therefore provides a promising candidate for magnetic refrigeration near room temperature.


Archive | 2014

Method for preparing SiC ohmic contact by ultraviolet pulse laser irradiation device

Lu Wuyue; Zhang Yongping; Cheng Yue; Tan Jiahui; Zhao Gaojie; Liu Yihong; Sun Yujun; Chen Zhizhan; Shi Wangzhou


Archive | 2014

Photoconductive switch manufacturing method based on SiC substrate

Zhang Yongping; Lu Wuyue; Tan Jiahui; Cheng Yue; Zhao Gaojie; Sun Yujun; Liu Yihong; Chen Enlong; Li Wanrong; Chen Zhizhan; Shi Wangzhou


Archive | 2013

Laser scanning side lobe suppression device of phased array

Yan Aimin; Shi Wangzhou; Hu Zhijuan; Zhu Ruixing


Archive | 2014

Silicon carbide mesoporous array material and manufacturing method of silicon carbide mesoporous array material

Tan Jiahui; He Hong; Zhang Yongping; Chen Zhizhan; Shi Wangzhou


Archive | 2013

Beam splitting and reshaping device of frequency linear chirped pulses

Yan Aimin; Chen Huili; Shi Wangzhou; Hu Zhijuan; Zhu Ruixing


RSC Advances (Web) | 2017

Cu~2+検出のための高感度蛍光プローブとしてのエチレンジアミン変調構造を持つ蛋白質に由来する炭素ナノドット【Powered by NICT】

Sai Liman; Chen Jun; Chang Quanhong; Shi Wangzhou; Chen Qi; Huang Lei


Applied Surface Science | 2017

被覆重量紙還元グラフェン酸化物/銀ナノ粒子に基づく高感度で再現性のある安定なSERS基板【Powered by NICT】

Xiao Guina; Li Yunxiang; Shi Wangzhou; Shen Leo; Chen Qi; Huang Lei


Applied Surface Science | 2016

(111)優先指向PbZr0.53Ti0.47O3/Pb(Mg1/3Nb2/3)0.62Ti0.38O3/PbZr0.53Ti0.47O33層膜の誘電体と強誘電体特性

Tang Yanxue; Zhu Bing; Wang Feifei; Sun Dazhi; Hu Zhijuan; Qin Xiaomei; Shi Wangzhou

Collaboration


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Chen Zhizhan

Chinese Academy of Sciences

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Qin Xiaomei

Shanghai Normal University

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Dai Jian-Hong

Chinese Academy of Sciences

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Long Youwen

Chinese Academy of Sciences

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Xia Hailiang

Shanghai Normal University

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Yang Junye

Chinese Academy of Sciences

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Yin Yunyu

Chinese Academy of Sciences

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