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Dive into the research topics where Shigeru Ishii is active.

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Featured researches published by Shigeru Ishii.


IEEE Transactions on Nuclear Science | 2002

SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design

K. Hirose; H. Saito; Yoshikatsu Kuroda; Shigeru Ishii; Y. Fukuoka; Daisuke Takahashi

We fabricate 128 Kbit SRAMs using a rad-hard circuit design based on a mixed-mode three-dimensional simulation in a commercial silicon-on-insulator foundry with 0.2 /spl mu/m design rules. Appropriate design increases the critical linear energy transfer of single-event upset over 164.4 MeV/(mg/cm/sup 2/).


IEEE Transactions on Nuclear Science | 2006

Direct Measurement of SET Pulse Widths in 0.2-

Yoshimitsu Yanagawa; Kazuyuki Hirose; Hirobumi Saito; Daisuke Kobayashi; S. Fukuda; Shigeru Ishii; Daisuke Takahashi; K. Yamamoto; Yoshikatsu Kuroda

Heavy-ion-induced SET-pulse widths in NOR-logic cells fabricated by a 0.2-mum FD-SOI technology are directly measured by using an on-chip self-triggering flip-flop circuit. The pulse widths are distributed from 0.3 to 1.0 ns under a constant LET of 40 MeVmiddot cm 2/mg


IEEE Transactions on Nuclear Science | 2004

\mu

Kazuyuki Hirose; Hirobumi Saito; S. Fukuda; Yoshikatsu Kuroda; Shigeru Ishii; Daisuke Takahashi; K. Yamamoto

The 128-kb SOI SRAMs without body-ties had a threshold LET of 3.6 MeV/(mg/cm/sup 2/), which was increased to 9.0 MeV/(mg/cm/sup 2/) by adding body-ties. We used a mixed-mode three-dimensional simulation to analyze the effects of the body-ties on SEU resistance for FD SOI SRAMs with 0.2-/spl mu/m design rules. The simulations revealed an increase in the threshold LET from 5.8 to 8.1 MeV/(mg/cm/sup 2/) that was mostly due to the reduced bipolar gain of the parasitic bipolar transistor and partly due to the added capacitance, which were both related to the body-ties.


european conference on radiation and its effects on components and systems | 2011

m SOI Logic Cells Irradiated by Heavy Ions

Daisuke Matsuura; Kazuyuki Hirose; Daisuke Kobayashi; Shigeru Ishii; M. Kusano; Yoshikatsu Kuroda; Hirobumi Saito

We designed a phase-locked loop (PLL) operating at 200 MHz using 0.2 µm fully depleted silicon-on-insulator (SOI) technology. By SPICE simulation with an appropriate single-event transient (SET) model, we achieved a radiation-hardened PLL that does not cause a SET upset upon ion irradiation with a linear energy transfer (LET) of 50 MeV-cm2/mg at an areal penalty of 75%.


IEEE Symposium Conference Record Nuclear Science 2004. | 2004

Analysis of body-tie effects on SEU resistance of advanced FD-SOI SRAMs through mixed-mode 3-D Simulations

M. Nomachi; Shigeru Ishii; Yoshikatsu Kuroda; Hidehito Nakamura; Takashige Sugimoto; Tadayuki Takahashi

Data size of recent balloonborne detector is growing. High speed data readout is one of the key technologies for those detectors. A parallel data bus has been used for sending data with high speed. However, it causes problems in noise, mechanical size and power consumption. We apply the serial data link for our apparatus as a replacement of the parallel data link to solve those problems. We designed the hardware and firmware based on the SpaceWire protocol. Because of simple and flexible routing protocol of SpaceWire, the system was compact and has very high modularity. The protocol is implemented on Alteras FPGAs, APEX20KE and Cyclone. The speed of the serial data link was 48-53 Mbps. The maximum data rate to the computer was 4.5 MB/s.


Archive | 2008

Radiation-hardened phase-locked loop fabricated in 200 nm SOI-CMOS

Shigeru Ishii; Masaharu Nomachi


Archive | 1998

A data readout system with high-speed serial data link for balloonborne X-ray detectors

Takao Wada; Yuzo Ishibashi; Shigeru Ishii; Yoshikatsu Kuroda


Archive | 1997

Serial-to-parallel conversion circuit and method of designing the same

Yuzo Ishibashi; Shigeru Ishii; Yoshikatsu Kuroda; Takao Wada; 孝雄 和田; 茂 石井; 祐三 石橋; 能克 黒田


IEEE Transactions on Nuclear Science | 2018

Radioactive rays detection semiconductor device

Hiroaki Itsuji; Daisuke Kobayashi; Osamu Kawasaki; Daisuke Matsuura; Takanori Narita; Masahiro Kato; Shigeru Ishii; Kazunori Masukawa; Kazuyuki Hirose


IEEE Transactions on Nuclear Science | 2018

Semiconductor radiation detecting element

Daisuke Kobayashi; Kazuyuki Hirose; Taichi Ito; Yuya Kakehashi; Osamu Kawasaki; Takahiro Makino; Takeshi Ohshima; Daisuke Matsuura; Takanori Narita; Masahiro Kato; Shigeru Ishii; Kazunori Masukawa

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Yoshikatsu Kuroda

Mitsubishi Heavy Industries

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Kazuyuki Hirose

Japan Aerospace Exploration Agency

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Daisuke Kobayashi

Japan Aerospace Exploration Agency

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Takao Wada

Japan Nuclear Cycle Development Institute

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Yuzo Ishibashi

Japan Nuclear Cycle Development Institute

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Daisuke Matsuura

Mitsubishi Heavy Industries

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Hirobumi Saito

Japan Aerospace Exploration Agency

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Kazunori Masukawa

Mitsubishi Heavy Industries

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Masahiro Kato

Mitsubishi Heavy Industries

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