Shin-ichiro Ideta

Single-Crystal Pentacene Valence-Band Dispersion and Its Temperature Dependence

The electronic structures of the highest occupied molecular orbital (HOMO) or the HOMO-derived valence bands dominate the transport nature of positive charge carriers (holes) in organic semiconductors. In the present study, the valence-band structures of single-crystal pentacene and the temperature dependence of their energy-momentum dispersion relations are successfully demonstrated using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS). For the shallowest valence band, the intermolecular transfer integral and effective mass of the holes are evaluated as 43.1 meV and 3.43 times the electron rest mass, respectively, at room temperature along the crystallographic direction for which the widest energy dispersion is expected. The temperature dependence of the ARUPS results reveals that the transfer integral values (hole effective mass) are enhanced (reduced) by ∼20% on cooling the sample to 110 K.

Surface Kondo effect and non-trivial metallic state of the Kondo insulator YbB12.

A synergistic effect between strong electron correlation and spin–orbit interaction has been theoretically predicted to realize new topological states of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6 has been actively discussed. Here, we show a metallic SS on the clean surface of another TKI candidate YbB12(001) using angle-resolved photoelectron spectroscopy. The SS shows temperature-dependent reconstruction corresponding to the Kondo effect observed for bulk states. Despite the low-temperature insulating bulk, the reconstructed SS with c–f hybridization is metallic, forming a closed Fermi contour surrounding on the surface Brillouin zone and agreeing with the theoretically expected behaviour for SS on TKIs. These results demonstrate the temperature-dependent holistic reconstruction of two-dimensional states localized on KIs surface driven by the Kondo effect.

Spin-polarized quasi-one-dimensional state with finite band gap on the Bi/InSb(001) surface

One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.