Shin Kubo

DETECTION OF GAMMA-RAY POLARIZATION IN PROMPT EMISSION OF GRB 100826A

We report the polarization measurement in prompt γ-ray emission of GRB 100826A with the Gamma-Ray Burst Polarimeter on board the small solar-power-sail demonstrator IKAROS. We detected the firm change of polarization angle (PA) during the prompt emission with 99.9% (3.5σ) confidence level, and the average polarization degree (Π) of 27% ± 11% with 99.4% (2.9σ) confidence level. Here the quoted errors are given at 1σ confidence level for the two parameters of interest. The systematic errors have been carefully included in this analysis, unlike other previous reports. Such a high Π can be obtained in several emission models of gamma-ray bursts (GRBs), including synchrotron and photospheric models. However, it is difficult to explain the observed significant change of PA within the framework of axisymmetric jet as considered in many theoretical works. The non-axisymmetric (e.g., patchy) structures of the magnetic fields and/or brightness inside the relativistic jet are therefore required within the observable angular scale of ~Γ–1. Our observation strongly indicates that the polarization measurement is a powerful tool to constrain the GRB production mechanism, and more theoretical works are needed to discuss the data in more detail.

High-resolution CdTe detector and applications to imaging devices

Using a high quality cadmium telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of /spl sim/0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2/spl times/2 mm/sup 2/ device and 2 keV for a 10/spl times/10 mm/sup 2/ device at 5/spl deg/C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625/spl times/625 /spl mu/m/sup 2/. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each /spl gamma/-ray photon.

A Si/CdTe semiconductor Compton camera

We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six stacked double-sided Si strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 80 keV to 662 keV. The energy resolution (FWHM) is 10 keV and 16 keV at 356 keV and 511 keV, respectively

Si/CdTe semiconductor compton camera

We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively.

Accurate Position of SGR 1900+14 by Bursts and Changes in Pulse Period and Folded Pulse Profile with ASCA

The Advanced Satellite for Cosmology and Astrophysics (ASCA) observed the soft gamma repeater SGR 1900+14 on 1998 April 30-May 1 and discovered a pulsar with a period of 5.1589715(8) s from the known X-ray source of RX J190714.2+0919.3. Four months later, on September 16-17, ASCA observed SGR 1900+14 again just after the giant burst on 1998 August 27. Comparing the observations in September with those in April, there are several changes in characteristics. The pulse period changed to 5.160295(3) s, and thus the long-term period derivative is 1.1 × 10-10 s s-1. This strongly supports a magnetar model. The folded pulse profile in 2-10 keV largely changed from three peaks in April to one simple peak, while the steady intensity increased by a factor of 2. Finally, we successfully determined the accurate location of SGR 1900+14 by the bursts with an accuracy of 15 in diameter.

Development of a Monte Carlo Simulator for the Astro-E2 hard X-ray detector (HXD-II)

The Hard X-ray Detector (HXD-II) is one of the scientific payloads on board the fifth Japanese cosmic X-ray satellite Astro-E2 , scheduled for launch in 2005. The HXD-II is designed to cover a wide energy range of 10-600 keV with a high sensitivity of about 10/sup -5/ cnt/s/cm/sup 2//keV. In order to derive the energy response of the sensor and to estimate the background, a Monte Carlo simulator based on the Geant4 toolkit is currently being developed. This paper describes the design concept of the HXD-II software package, including the analysis tools and the Monte Carlo simulator, and its verification through a comparison with actual data taken by pre-flight radio-isotope irradiation experiments, together with calculated outputs that can demonstrate the in-orbit performance of the HXD-II.

Performance of the ASTRO-E hard X-ray detector

This paper summarizes the design and performance of the hard X-ray detector constructed for the ASTRO-E satellite. The detector utilizes the GSO/BGO well-type phoswich counters in a compound-eye configuration to achieve an extremely low background level of a few /spl times/ 10/sup -5/ counts s/sup -1/ cm/sup -2/ keV/sup -1/. The GSO scintillators installed in the BGO active shield wells are sensitive to 30-600 keV photons, while the 2-mm-thick silicon PIN diodes, placed in front of each GSO crystal, cover the 10-60 keV energy band with a spectral resolution of /spl sim/3.5-keV full-width at half-maximum. The design goals, of both low background and high energy resolution, in the hard X-ray bands were verified through the preflight calibration experiments.

Large area gamma-ray imaging detector based on high-resolution CdTe diode

We are developing a large array detector composed of 1024 individual CdTe diodes. Each detector has the dimensions of 1.2 mm /spl times/ 5.0 mm and a thickness of 1.2 mm. An edge-on geometry is used for the injection of /spl gamma/-rays, to obtain a cross-section thickness of 5 mm. With this geometry, the distance between the two electrodes can be kept small, and we can therefore apply the high electric field which is necessary to achieve a high energy resolution (by reducing the low energy tail) and also to sustain the long-term stability of the CdTe diode. Signals from each detector element are fed into newly developed low noise ASICs. We use 32 chips for the readout of 1024 elements. In this paper, we report the basic characteristics of the individual detectors and the overall performance of the gamma-camera. Design of the readout electronics system is also described.

Electronic system for the Astro-E Hard X-ray Detector

The Hard x-ray Detector (HXD) is one of three instruments on the fifth Japanese x-ray astronomy satellite, Astro-E, scheduled for launch in 2000. The sensitivity of the Astro-E HXD will be higher by more than one order of magnitude than that of nay previous instrument between 10 keV and several 100 keV. The electronic system is designed to handle many independent data channels from the HXD within the limitation of size and power consumption required in Astro-E. In this paper, we will present the design and the preliminary performance of the processing electronic system.

Thick and large area PIN diodes for hard X-ray astronomy

Abstract Thick and large area PIN diodes for the hard X-ray astronomy in the 10–60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.