Shinobu Onoda

Development of a new data collection system and chamber for microbeam and laser investigations of single event phenomena

Abstract A new target chamber and control system for temperature-based transient-IBIC and transient-LBIC measurements using the same experimental chamber is outlined. The system has been designed for both ultra-fast and relatively slow transient measurements as a function of temperature from 77 K to 450 K. The control system, implemented in the Labview environment, allows single ion scanning and transient acquisition on a set of oscilloscopes, for an array of temperatures and bias. The modularity of the system allows its use for a broad range of experiments from single event upset transient current measurements to scanning ion deep level transient spectroscopy charge transient measurements. In this paper, we describe the overall system and illustrate its potential by way of example.

Extending spin coherence times of diamond qubits by high-temperature annealing

Spins of negatively charged nitrogen-vacancy (NV

Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation

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Spectral response of a gamma and electron irradiated pin photodiode

) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled introduction of NV

Displacement damage degradation of ion-induced charge in Si pin photodiode

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TCAD modeling of single MeV ion induced charge collection processes in Si devices

defects having excellent properties such as spectral stability, long spin coherence time, and stable negative charge state. Nitrogen ion implantation and annealing enable the positioning of NV

Studies on single-event phenomena using the heavy-ion microbeam at JAERI

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Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation

spin qubits with high precision, but to date, the coherence times of qubits produced this way are short, presumably because of the presence of residual radiation damage. In the present work, we demonstrate that a high temperature annealing at 1000

Development of Monte Carlo modeling for proton induced charge in Si pin photodiode

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Observation of transient current induced in silicon carbide diodes by ion irradiation

C allows 2 millisecond coherence times to be achieved at room temperature. These results were obtained for implantation-produced NV