Shivendra Yadav

Analysis of a Novel Metal Implant Junctionless Tunnel FET for Better DC and Analog/RF Electrostatic Parameters

Steep rise in the subthreshold slope, high current driving capability, and negligible ambipolarity are the major prerequisite conditions of tunnel FETs (TFETs) to make it applicable for Analog/RF circuit applications. Along with that, fabrication of physically doped TFETs is a major concern in device technology. In this context, this paper deals with junctionless TFET with a metal implanted in the oxide at the source/channel and drain/channel junctions to enhance its ON-current and reduce the ambipolar nature. The metal introduced at the source/channel junction generates abruptness and brings improvement in subthreshold slope, which increases the current driving capability of the device. Similarly, the metal implanted at the drain/channel junction widens the energy gap at the same junction to reduce the ambipolar behavior of the device. This also contributes to the enhancement of dc and analog/RF performance of the device. The selection of appropriate work function and length of the metal implanted at both the interfaces is important to maintain the improved ON-current and ambipolarity. This optimization gives idea of keeping the appropriate length, which provides direction toward practical feasibility at the experimental level.

Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor

A vertical dielectrically modulated tunnel field-effect transistor (V-DMTFET) as a label-free biosensor has been investigated in this paper for the first time and compared with lateral DMTFET (L-DMTFET) using underlap concept and gate work function engineering. To improve the performance of lateral biosensor (LB), a heavily doped front gate <inline-formula> <tex-math notation=LaTeX>

A New Approach to Suppress Ambipolarity and Improve RF and Linearity Performances on Electrically Doped Tunnel FET

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Performance improvement of doped TFET by using plasma formation concept

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A new design approach for enhancement of DC/RF performance with improved ambipolar conduction of dopingless TFET

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Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET

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Effective approach to enhance DC and high-frequency performance of electrically doped TFET

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Hetero-material CPTFET with high-frequency and linearity analysis for ultra-low power applications

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Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation

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Impact of gate material engineering on ED-TFET for improving DC/analogue-RF/linearity performances

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