Shixiong Zhang

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO2 Nanobeam

The electrical resistance of single VO(2) nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M(1) phase to a mixture of the Mott-insulating M(2) and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M(2) phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.

Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase

We report on the structural, electrical, and optical properties of 5% niobium doped TiO2 thin films grown on various substrates by pulsed laser deposition. The epitaxial anatase Nb:TiO2 film on LaAlO3 is shown to be an intrinsic transparent metal and its metallic property arises from Nb substitution into Ti site as evidenced by the Rutherford backscattering channeling result. In contrast, the rutile Nb:TiO2 thin films show insulating behaviors with 2–3 orders higher room temperature electrical resistivity and ∼30 times lower mobility. A blueshift in the optical absorption edge is observed in both phases, though of differing magnitude.

Stoichiometry Engineering of Monoclinic to Rutile Phase Transition in Suspended Single Crystalline Vanadium Dioxide Nanobeams

Coexisting monoclinic M(1) (insulating) and rutile (metallic) domains were observed in free-standing vanadium dioxide nanobeams at room temperature. Similar domain structures have been attributed to interfacial strain, which was not present here. Annealing under reducing conditions indicated that a deficiency of oxygen stabilizes the rutile phase to temperatures as low as 103 K, which represents an unprecedented suppression of the phase transition by 238 K. In a complementary manner, oxygen-rich growth conditions stabilize the metastable monoclinic M(2) and triclinic T (or M(3)) phases. A pseudophase diagram with dimensions of temperature and stoichiometry is established that highlights the accessibility of new phases in the nanobeam geometry.

Relative influence of surface states and bulk impurities on the electrical properties of ge nanowires

We quantitatively examine the relative influence of bulk impurities and surface states on the electrical properties of Ge nanowires with and without phosphorus (P) doping. The unintentional impurity concentration in nominally undoped Ge nanowires is less than 2 x 10(17) cm(-3) as determined by atom probe tomography. Surprisingly, P doping of approximately 10(18) cm(-3) reduces the nanowire conductivity by 2 orders of magnitude. By modeling the contributions of dopants, impurities, and surface states, we confirm that the conductivity of nominally undoped Ge nanowires is mainly due to surface state induced hole accumulation rather than impurities introduced by catalyst. In P-doped nanowires, the surface states accept the electrons generated by the P dopants, reducing the conductivity and leading to ambipolar behavior. In contrast, intentional surface-doping results in a high conductivity and recovery of n-type characteristics.

Growth parameter-property phase diagram for pulsed laser deposited transparent oxide conductor anatase NB: TiO2

The authors performed a systematic study of the structural and electrical properties of Nb:TiO2 thin films by varying the substrate temperature (TS) and oxygen partial pressure (PO2). Niobium is found to incorporate easily and substitutionally into titanium lattice site as indicated by its low activation energy. By increasing TS, the carrier concentration (n) increases in the same way that niobium substitution fraction (s) increases, and the mobility increases as the structural quality is improved. With increasing PO2, n decreases dramatically though s does not change considerably. This may indicate that a large number of p-type native defects form, which “kill” the electrons produced by the Nb donors.

Magneto-resistance up to 60 Tesla in topological insulator Bi2Te3 thin films

We report magneto-transport studies of topological insulator Bi2Te3 thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a few Tesla up to 60 Tesla. We demonstrate that the strong linear-like MR at high field can be well understood as the weak antilocalization phenomena described by Hikami-Larkin-Nagaoka theory. Our analysis suggests that in our system, a topological insulator, the elastic scattering time can be longer than the spin-orbit scattering time. We briefly discuss our results in the context of Dirac Fermion physics and “quantum linear magnetoresistance.”

Synthesis of superparamagnetic nanotubes as MRI contrast agents and for cell labeling

AIMS Magnetic nanoparticles have been studied widely as MRI contrast agents to increase the sensitivity of this technique. This work describes the synthesis and characterization of magnetic nanotubes (MNTs) as a novel MRI contrast agent. METHODS MNTs with high saturation magnetization were fabricated by the synthesis of superparamagnetic iron oxide nanoparticles (SPIONs) directly in the pores of silica nanotubes (SNTs). The MNTs were characterized by electron microscopy, superconducting quantum interference device and MRI. Preliminary studies on in vitro cytotoxicity and cell labeling were carried out. RESULTS The MNTs retained the superparamagnetic characteristics in bulk solutions with a considerably high saturation magnetization of 95 emu/gFe. The nuclear magnetic resonance (NMR) relaxivities for MNTs of 500 nm in length and of 60 nm in diameter were r(1) = 1.6 +/- 0.3 mM(-1)s(-1) and r(2) = 264 +/- 56 mM(-1)s(-1) and, for the MNTs of 2 microm in length and 70 nm in diameter, the r(1) and r(2) were 3.0 +/- 1.3 and 358 +/- 65 mM(-1)s(-1), respectively. In vitro cell labeling showed promising results with excellent labeling efficiency. No cellular toxicity was observed in vitro. CONCLUSIONS The integration of SPIONs with SNTs imparts the superparamagnetic characteristics of SPIONs onto the SNTs, creating unique magnetic nanoparticles with multifunctionality. The MNTs showed promising results as a MRI contrast agent with high NMR relaxivities, little cytotoxicity and high cell-labeling efficiency.

Single crystalline nanostructures of topological crystalline insulator SnTe with distinct facets and morphologies.

Topological crystalline insulators (TCIs) are a new class of topological materials that possess unique metallic surface states protected by crystalline mirror symmetry. Their topological surface properties are expected to strongly depend on the surface orientation. By combining density functional theory (DFT) calculations and synthesis experiments, we demonstrate the controlled growth of single crystalline nanostructures of the prototypical TCI SnTe with distinct facets and morphologies. Our calculations suggest that the excess energy of the {111} surfaces can be either higher or lower than that of the {100} surfaces, depending on the stoichiometry, while the {110} is always higher than the {100}. In our synthesis experiment, we qualitatively controlled the stoichiometry by tailoring the growth temperature and obtained two types of single crystalline nanowires: smooth nanowires dominated by {100} facets at high temperatures and zigzag nanowires composed of both {100} and {111} surfaces at low temperatures. Notably, there is no {110} facet in our nanostructures, strongly supporting the DFT calculations. Our device fabrication and electrical characterizations suggest that both types of nanowires are suitable for transport studies of topological surface states.

Direct detection of hole gas in Ge-Si core-shell nanowires by enhanced Raman scattering.

We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.

Search for ferromagnetism in conductive Nb:SrTiO3 with magnetic transition element (Cr, Co, Fe, Mn) dopants

Thin films of (0.5%, 1%) Nb:SrTiO3 dilutely doped with (2at.%) magnetic transition elements (Cr, Co, Fe, Mn) are examined for ferromagnetism. X-ray diffraction, Rutherford backscattering ion channeling, scanning transmission electron microscopy Z-contrast imaging, and electron energy loss spectroscopy techniques establish high crystalline quality of the films with no impurity phase(s) and highly uniform dopant distribution. Although the film conductivity improves dramatically by Nb doping, no ferromagnetism is found in any of our samples over the temperature range of 365 down to 5K. This is contrasted to the case of ferromagnetism reported in cobalt doped (La,Sr)TiO3.