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Dive into the research topics where Shoichi Hanatani is active.

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Featured researches published by Shoichi Hanatani.


IEEE Photonics Technology Letters | 1997

Optical interconnections for the massively parallel computer

Shinji Nishimura; Hiroaki Inoue; Shoichi Hanatani; Hiroshi Matsuoka; Takashi Yokota

Summary form only given. Optical interconnections are introduced to the massively parallel computer (RWC-1) testbed system using 16 12-channel fully integrated optical modules. This system achieved high throughput inter-board optical interconnections of 48-bit parallel data at 100 MHz, thus enabling 4.8-Gbps throughput.


optical fiber communication conference | 1998

Optical cross-connect systems for restoration of backbone fiber networks

Hideaki Tsushima; Hirohisa Sano; Shigeki Kitajima; Yasushi Sawada; Tatsuo Kanetake; Yukio Hayashi; Sunao Kakizaki; Yasuyuki Fukashiro; Tsuneo Nakata; Shoichi Hanatani; Niall Robinson; Gary B. Davis; John Fee; Shoa-Kai Liu

Summary form only given. As the capacity of backbone networks is becoming larger, restoration against fiber/cable failures must become faster, because large amounts of data would be lost during the failure. The optical cross-connect (OXC) technology is an attractive alternative for fast restoration, and has the potential to provide bandwidth-management capability in future wavelength-division multiplexing (WDM) networks. This paper describes newly developed OXC systems with a low insertion loss of 1.16 dB and a high-speed restoration of <150 ms.


lasers and electro optics society meeting | 1996

12-channel fully-integrated CMOS-interface optical interconnect modules with an operating voltage of +3.3 V

Shoichi Hanatani; A. Miura; S. Kaneko; A. Oishi; A. Takai

Using an 1.3 /spl mu/m low-threshold-current LD arrays with and an SMF array, 250 Mbit/s/ch 12 channel fully integrated compact optical interconnect modules with CMOS interfaces were developed. 20 Gb/s ATM switch boards with the modules developed were demonstrated.


international conference on indium phosphide and related materials | 1995

A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage

Shoichi Hanatani; M. Shishikura; Shigehisa Tanaka; H. Kitano; T. Miyazaki; Hitoshi Nakamura

For operation of an avalanche photodiode (APD) at an IC-power-supply voltage, less than 5 V, a novel edge-coupled waveguide superlattice (SL) APD is proposed. Using a strained InAlAs/InGaAs SL, multiplication factor larger than 10 is experimentally demonstrated at a bias voltage less than 7 V. A wide 3dB-bandwidth of 8 GHz is obtained at a multiplication factor of 3.


optical fiber communication conference | 2001

High-speed optical protection system using MEMS optical switch triggered by SONET performance monitor

Sunao Kakizaki; Yukio Hayashi; Yusuke Yajima; Hideaki Tsushima; Shoichi Hanatani

High-speed and low cost optical 1+1 protection system using a MEMS optical switch triggered by SONET performance monitor (SD/SF) for high accuracy protection was developed. 980 /spl mu/s switching time of optical power recovery was demonstrated.


IEEE Photonics Technology Letters | 1998

Error-free optical inter-node connection for the massively parallel computer

Shinji Nishimura; Hiroaki Inoue; Shoichi Hanatani; Hiroshi Matsuoka; Takashi Yokota

An optical inter-node connection in a massively parallel computer testbed was used in order to determine whether large throughput highly reliable inter-node communication is attainable. Highly reliable 48-b parallel-data transmission at 100 MHz (600-MB/s throughput) was achieved. For error-free data transmission, the total skew in the inter-node data transmission was suppressed to less than /spl plusmn/1 ns. In an 80-h pseudorandom packet-data transmission test, no errors were detected. This corresponds to a BER of less than 2.17/spl times/10/sup -15/. Thus, it is clearly shown that the optical interconnection overcomes the communication bottleneck in parallel-processing systems.


lasers and electro optics society meeting | 1996

800 Mbit/s/ch-10 channel fully-integrated low-skew optical modules for optical subsystem interconnections

Y. Fukashiro; S. Kaneko; A. Oishi; Shoichi Hanatani

This paper presents 10 channel fully-integrated high-speed and low skew optical transmitter and receiver modules using a low threshold current (2.1 mA) LD array, a low capacitance pin-photodiode (PD) array and high-speed Si-bipolar array ICs.


international conference on transparent optical networks | 2012

Analysis on FTTx deployment and technology in Asia-Pacific and perspective through lessons learned

Shoichi Hanatani

Summary form only given. With a view of that most of FTTx mass-deployment has been in Asia-Pacific region last decade, analysis and lessons on FTTx network architectures, technologies and business models deployed in Asia-Pacific are discussed and perspective on FTTx development next decade is provided.


IEEE Photonics Technology Letters | 1994

Nonlinear optical properties of an InGaAs/InAlAs multiple quantum well waveguide with pulsed excitation

Tatsuo Kanetake; Hiroaki Inoue; Shigehisa Tanaka; Shoichi Hanatani

Large optical refractive nonlinearity in a passive InGaAs/InAlAs multiple quantum well waveguide is demonstrated at a wavelength of 1.55 /spl mu/m by observing a shift in the transmission fringe of a Fabry-Perot resonator with a pulsed pump beam. In a 650-/spl mu/m long resonator, a half /spl pi/ phase shift every 3.3 mW with increasing in pump beam power is observed up to 4/spl pi/. The response time of the nonlinear refractive index change is estimated to be 1 ns.<<ETX>>


Optical and Quantum Electronics | 1996

A strained InAIAs/InGaAs superlattice avalanche photodiode with a waveguide structure for low bias-voltage operation

Shoichi Hanatani; H. Kitano; Masato Shishikura; Shigehisa Tanaka

An InAIAs/InGaAs superlattice (SL) multiplication layer operating at an IC-power supply voltage was realized by introducing strain into the SL. Using this SL as an absorption and multiplication layer, edge-coupled InAIAs/InGaAs SL avalanche photodiodes with waveguide structures were demonstrated. An avalanche multiplication factor larger than 10 was achieved at a bias voltage of less than 7V. A wide 3 dB bandwidth of 8 GHz was obtained at a multiplication factor of 3 and a wavelength of 1.3 μm.

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