Shoji Mizuno

A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI). For circuits, an automotive specific reduced instruction set computer (RISC) center processing unit (CPU), and a novel, all integrated system clock generator, dividing digital phase-locked loop (DDPLL) are proposed. For the device technologies, the authors use SOI-BiCDMOS with trench dielectric-isolation (TD) which enables integration of various devices in an integrated circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desired device characteristics and high electromagnetic interference (EMI) immunity. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS technologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

The authors have developed 4H-SiC trench MOSFETs with orthogonal Deep-P structures (ODSs) to improve the trade-off between the on-resistance and the gate oxide field. The conditions of photolithography to realize a miniaturized Deep-P pattern have been optimized. The fabricated MOSFETs with ODS have demonstrated a low on-resistance of 2 mΩcm2 and a high breakdown voltage of 1.8 kV.

Gate insulator characteristics on the bonded thick SOI wafers for automotive IC applications

For the robustness of harsh environments around automotive ICs, such as negative surge and ESD, the authors have committed the thick SOI BiCDMOS process with trench dielectric isolations. This paper focuses on causes degrading reliability of gate insulators such as silicon dioxides and ONO (Oxide Nitride Oxide) films induced by the process.