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Dive into the research topics where Shoji Uchimura is active.

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Featured researches published by Shoji Uchimura.


Materials Science Forum | 2007

Fabrication of Bi2-xSbxTe3 (x=0-1.5) Thick Film by Centrifugal Deposition

Tomohiro Aoki; Yoshiaki Kinemuchi; Hisashi Kaga; Chihiro Ito; Hirohide Ishiguro; Hideki Morimitsu; Shoji Uchimura; Koji Watari

A Bi2-xSbxTe3(x=0-1.5) thick film thermoelectric element was fabricated using centrifugal deposition and its Sb content-dependent thermoelectric properties were investigated. When the Sb content was low (x=0.5), two types of fine structure along the direction of the thickness were observed. Pole figure measurements revealed that the vicinity of the film surface was composed of single crystal layers oriented along the c-axis and the vicinity of the interface with the substrate was composed of randomly orientated layers. As the content of Sb increased, the degree of orientation improved, and at x=1.5 the entire film was close to a single crystal. A Bi0.5Sb1.5Te3 thick film showed p-type thermoelectric properties and a thermoelectric power factor of 3.5 ×10-3W/mK2. It was thus demonstrated that centrifugal deposition can be used to fabricate thermoelectric elements with high efficiency.


Advanced Materials Research | 2006

Centrifugal Sintering - Development of a New Pressure Sintering Process -

Yoshiaki Kinemuchi; Hirohide Ishiguro; Shoji Uchimura; Koji Watari

Centrifugal sintering is a novel process for the preparation of thick films. In this process, high gravity such as 104g is applied at high temperatures. Because of the distinctive measure of pressing by the centrifugal force, gradient of pressure arises in the specimen, resulting in the graded porous structure during the progress of sintering. After the sintering, highly densified thick films are obtained. Furthermore, crack formation was suppressed by this process.


Key Engineering Materials | 2004

Centrifugal Sintering of Copper

Koji Watari; Yoshiaki Kinemuchi; Kiminori Sato; Shoji Uchimura

The ceramic film with thickness of several ten μm to several mm on a substrate and small ceramic piece with a complicated shape have been interested because of highly integrated, small electric devices. In this work, we suggest novel centrifugal sintering method, which can be sintered ceramic film and small ceramic piece by applying high pressure without pressure medium, and its processing merit. Furthermore, outline of installed sintering equipment and experimental result were shown. Introduction Since ceramic thin and thick films are key materials for highly integrated electronic devices, their processing strategy is very significant. As for chemical processing, ceramic film is conventionally obtained by preparing chemical solution, dip-coating on a substrate material, drying, followed by sintering. In this case, formation of crack can not avoid in ceramic film. The crack formation is mainly divided into three categories. During dip-coating, crack forms due to difference between vapor pressure and capillary pressure of slurry solvent. In the drying, mismatch occurs due to shrinkage of ceramic dry structure and restriction of ceramic around substrate, making significant breakage in ceramic. Similar crack formation is also found during sintering [1]. Therefore, plastic materials to relax the mismatch are always added to slurry solvent [1]. Furthermore, low-temperature sintering of ceramic film on substrate is strongly required because of limitation of heat resistance in substrate. In order to solve these problems, we suggest a novel high-pressure firing/sintering technique without pressure media. Concept of Centrifugal Sintering To avoid crack formation and promote densification, we offer centrifugal sintering Key Engineering Materials Online: 2004-05-15 ISSN: 1662-9795, Vols. 264-268, pp 757-760 doi:10.4028/www.scientific.net/KEM.264-268.757


Key Engineering Materials | 2004

Ceramics Processing Assisted by Centrifugal Pressure

Yoshiaki Kinemuchi; Shoji Uchimura; Koji Watari

Constrained sintering, as seen in the sintering of laminated structure or thick film, inherently involves the problem of macroand micro-defect formation such as cracks and/or de-lamination. The origin of these defects lies in mismatches of sintering shrinkage between materials. Sintering under centrifugal acceleration has been found to be a successful strategy for eliminating these mismatches, leading to a crack-free homogeneous microstructure. This distinctive feature of centrifugal sintering arises from anisotropic shrinkage that is caused by chief densification progress along the radius of rotation.


Materials Science Forum | 2003

Porosity-grading porous materials by centrifugal sintering

Yoshiaki Kinemuchi; Shinji Sato; Koji Watari; Shoji Uchimura

We have demonstrated a new synthesis of ceramics with porosity-grading microstructure, being achieved by applying high acceleration to ceramics during sintering. The acceleration was generated by high-speed rotation of ceramics, which allows pressing materials gradually along the radius of rotation. The origin of microstructure has been explained quantitatively from the basis of sintering kinetics, in which non-uniform shrinkage caused by a centrifugal pressure has been taken in account.


Archive | 2004

Device and method for damping vibration of rotating shaft system

Yukio Ishida; Jun Liu; Shoji Uchimura; Hideki Morimitsu; Hirohide Ishiguro


Archive | 2002

Production of oriented material or composite material through centrifugal burning

Koji Watari; Kazuo Nakamura; Kimiyasu Sato; Yoshiaki Kinemuchi; Shoji Uchimura; Hirohide Ishiguro; Hideki Morimitsu


Archive | 1999

Method and apparatus for carrying out a thermal shock test on ceramics

Shoji Uchimura; Hirohide Ishiguro; Kazuhiro Ohta; Manabu Takatsu; Yasunobu Mizutani


Archive | 2003

Grading porous structure and its process

Yoshiaki Kinemuchi; Koji Watari; Shoji Uchimura; Hirohide Ishiguro; Hideki Morimitsu


Journal of the Ceramic Society of Japan | 2004

Ceramics Integration by Hot Centrifugal Pressing

Yoshiaki Kinemuchi; Hideki Morimitsu; Hirohide Ishiguro; Shoji Uchimura; Koji Watari

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Hirohide Ishiguro

National Institute of Advanced Industrial Science and Technology

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Koji Watari

National Institute of Advanced Industrial Science and Technology

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Yoshiaki Kinemuchi

National Institute of Advanced Industrial Science and Technology

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Hideki Morimitsu

National Institute of Advanced Industrial Science and Technology

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Kimiyasu Sato

National Institute of Advanced Industrial Science and Technology

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Chihiro Ito

National Institute of Advanced Industrial Science and Technology

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