Shokouh S. Farvid

Size-Tunable Phosphorescence in Colloidal Metastable γ-Ga2O3 Nanocrystals

We report a colloidal synthesis of gallium oxide (Ga(2)O(3)) nanocrystals having metastable cubic crystal structure (gamma phase) and uniform size distribution. Using the synthesized nanocrystal size series we demonstrate for the first time a size-tunable photoluminescence in Ga(2)O(3) from ultraviolet to blue, with the emission shifting to lower energies with increasing nanocrystal size. The observed photoluminescence is dominated by defect-based donor-acceptor pair recombination and has a lifetime of several milliseconds. Importantly, the decay of this phosphorescence is also size dependent. The phosphorescence energy and the decay rate increase with decreasing nanocrystal size, owing to a reduced donor-acceptor separation. These results allow for a rational and predictable tuning of the optical properties of this technologically important material and demonstrate the possibility of manipulating the localized defect interactions via nanocrystal size. Furthermore, the same defect states, particularly donors, are also implicated in electrical conductivity rendering monodispersed Ga(2)O(3) nanocrystals a promising material for multifunctional optoelectronic structures and devices.

Colloidal Gallium Indium Oxide Nanocrystals: A Multifunctional Light-Emitting Phosphor Broadly Tunable by Alloy Composition

We demonstrate compositionally tunable photoluminescence in complex transparent conducting oxide nanocrystals. Alloyed gallium indium oxide (GIO) nanocrystals with variable crystal structures are prepared by a colloidal method throughout the full composition range and studied by different structural and spectroscopic methods, including photoluminescence and X-ray absorption. The structures and sizes of the GIO nanocrystals can be simultaneously controlled, owing to the difference in the growth kinetics of In(2)O(3) and Ga(2)O(3) nanocrystals and the polymorphic nature of both materials. Using the synthesized nanocrystal series, we demonstrate the structural and compositional dependences of the photoluminescence of GIO nanocrystals. These dependences, induced by the interactions between specific defect sites acting as electron donors and acceptors, are used to achieve broad emission tunability in the visible spectral range at room temperature. The nature of the photoluminescence is identified as donor-acceptor pair recombination and changes with increasing indium content owing to the changes in the energy states of, and interactions between, donors and acceptors. Structural analysis of GIO nanocrystals by extended X-ray absorption fine structure spectroscopy reveals that In(3+) occupies only octahedral, rather than tetrahedral, sites in the spinel-type γ-Ga(2)O(3) nanocrystal host lattice, until reaching the substitutional incorporation limit of ca. 25%. The emission decay dynamics is also strongly influenced by the nanocrystal structure and composition. The oxygen vacancy defects, responsible for the observed photoluminescence properties, are also implicated in other functional properties, particularly conductivity, enabling the application of colloidal GIO nanocrystals as integrated optoelectronic materials.

General Control of Transition-Metal-Doped GaN Nanowire Growth : Toward Understanding the Mechanism of Dopant Incorporation

We report the first synthesis and characterization of cobalt- and chromium-doped GaN nanowires (NWs), and compare them to manganese-doped GaN NWs. Samples were synthesized by chemical vapor deposition method, using cobalt(II) chloride and chromium(III) chloride as dopant precursors. For all three impurity dopants hexagonal, triangular, and rectangular NWs were observed. The fraction of NWs having a particular morphology depends on the initial concentration of the dopant precursors. While all three dopant ions have the identical effect on GaN NW growth and faceting, Co and Cr are incorporated at much lower concentrations than Mn. These findings suggest that the doping mechanism involves binding of the transition-metal intermediates to specific NW facets, inhibiting their growth and causing a change in the NW morphology. We discuss the doping concentrations of Mn, Co, and Cr in terms of differences in their crystal-field stabilization energies (DeltaCFSE) in their gas-phase intermediates and in substitutionally doped GaN NWs. Using iron(III) chloride and cobalt(II) acetate as dopant precursors we show that the doping concentration dependence on DeltaCFSE allows for the prediction of achievable doping concentrations for different dopant ions in GaN NWs, and for a rational choice of a suitable dopant-ion precursor. This work further demonstrates a general and rational control of GaN NW growth using transition-metal impurities.

Phase Transformation of Colloidal In2O3 Nanocrystals Driven by the Interface Nucleation Mechanism: A Kinetic Study

The kinetics of phase transformation of colloidal In(2)O(3) nanocrystals (NCs) during their synthesis in solution was explored by a combination of structural and spectroscopic methods, including X-ray diffraction, transmission electron microscopy, and extended X-ray absorption fine structure spectroscopy. Johnson-Mehl-Avrami-Erofeyev-Kholmogorov (JMAEK) and the interface nucleation models were used to analyze the isothermal kinetic data for the phase transformation of NCs in the temperature range of 210-260 °C. The results show that NCs are initially stabilized in the metastable corundum (rh-In(2)O(3)) phase. The phase transformation occurs via nucleation of cubic bixbyite (bcc-In(2)O(3)) phase at the interface between contacting rh-In(2)O(3) NCs, and propagates rapidly throughout the NC volume. The activation energy of the phase transformation was determined from the Arrhenius expression to be 152 ± 60 kJ/mol. The interface nucleation rate is maximal at the beginning of the phase transformation process, and decreases over the course of the reaction due to a decrease in the concentration of rh-In(2)O(3) NCs in the reaction mixture. In situ high-temperature XRD patterns collected during nonisothermal treatment of In(2)O(3) NCs reveal that phase transformation of smaller NCs occurs at a faster rate and lower temperature, which is associated with their higher packing density and contact formation probability. Because NC surfaces and interfaces play a key role in phase transformation, their control through the synthesis conditions and reaction kinetics is an effective route to manipulate NC structure and properties.

Evidence of charge-transfer ferromagnetism in transparent diluted magnetic oxide nanocrystals: switching the mechanism of magnetic interactions.

We report the experimental evidence of a new form of room-temperature ferromagnetism in high surface area nanocrystalline manganese-doped In2O3, prepared from colloidal nanocrystals as building blocks. The nanocrystal structure (bixbyite or corundum) and assembly were controlled by their size, and the type and concentration of dopant precursors. The existence of substitutional paramagnetic Mn dopant ions in mixed valence states (Mn(2+) and Mn(3+)) was confirmed and quantified by different spectroscopic methods, including X-ray absorption and magnetic circular dichroism. The presence of different oxidation states is the basis of ferromagnetism induced by Stoner splitting of the local density of states associated with extended structural defects, due to charge transfer from the Mn dopants. The extent of this charge transfer can be controlled by the relationship between the electronic structures of the nanocrystal host lattice and dopant ions, rendering a higher magnetic moment in bixbyite relative to corundum Mn-doped In2O3. Charge-transfer ferromagnetism assumes no essential role of dopant as a carrier of the magnetic moment, which was directly confirmed by X-ray magnetic circular dichroism, as an element-specific probe of the origin of ferromagnetism. At doping concentrations approaching the percolation limit, charge-transfer ferromagnetism can switch to a double exchange mechanism, given the mixed oxidation states of Mn dopants. The results of this work enable the investigations of the new mechanisms of magnetic ordering in solid state and contribute to the design of new unconventional magnetic and multifunctional materials.

Synthesis and surface control of colloidal Cr3 + -doped SnO2 transparent magnetic semiconductor nanocrystals

The synthesis of colloidal Cr(3+)-doped SnO(2) nanocrystals prepared under mild conditions via a hydrolysis method is described. We show by means of nanocrystal surface ligand exchange that even under mild reaction conditions a significant fraction of the dopant ions reside on the nanocrystal surfaces. Two different approaches aimed at achieving internal dopant incorporation-surface-bound dopant complexation and isocrystalline shell growth-are described and compared. While free-standing nanocrystals are paramagnetic, the films prepared from the same nanocrystals exhibit ferromagnetic ordering at room temperature. The measured magnetization is associated with structural defects formed at the interfaces of nanocrystals in their films, and discussed in terms of the defect-related itinerant-electron-mediated mechanism. The observed ferromagnetism is compared to ferromagnetism in Cr(3+)-doped In(2)O(3) nanocrystalline films. These results demonstrate the possibility of controlling surface structure and composition of doped oxide nanocrystals using different approaches. Furthermore, this work emphasizes the importance of surface structure and composition in tailoring properties of doped multifunctional transparent conducting oxide nanostructures.

Tuning manganese dopant spin interactions in single GaN nanowires at room temperature.

Control of electron spins in individual magnetically doped semiconductor nanostructures has considerable potential for quantum information processing and storage. The manipulations of dilute magnetic interactions have largely been restricted to low temperatures, limiting their potential technological applications. Among the systems predicted to be ferromagnetic above room temperature, Mn-doped GaN has attracted particular attention, due to its attractive optical and electrical properties. However, the experimental data have been inconsistent, and the origin of the magnetic interactions remains unclear. Furthermore, there has been no demonstration of tuning the dopant exchange interactions within a single nanostructure, which is necessary for the design of nanoscale spin-electronic (spintronic) devices. Here we directly show for the first time intrinsic magnetization of manganese dopants in individual gallium nitride nanowires (NWs) at room temperature. Using high-resolution circularly polarized X-ray microscopy imaging, we demonstrate the dependence of the manganese exchange interactions on the NW orientation with respect to the external magnetic field. The crystalline anisotropy allows for the control of dilute magnetization in a single NW and the application of bottom-up approaches, such as in situ nanowire growth control or targeted positioning of individual NWs, for the design of networks for quantum information technologies.

Electronic structure and magnetism of Mn dopants in GaN nanowires: Ensemble vs single nanowire measurements

We studied the electronic structure and magnetization of Mn dopants in GaN nanowires at the ensemble and single nanowire levels by near edge x-ray absorption fine structure spectroscopies. The results of single nanowire measurements indicate that Mn adopts tetrahedral coordination in GaN nanowires and has mixed oxidation state (Mn2+/Mn3+), with Mn2+ being in relative majority. Ensemble nanowire spectra suggest co-deposition of Mn secondary phases alongside nanowires. Single nanowire x-ray magnetic circular dichroism indicates intrinsic magnetic ordering of Mn dopants at 300 K. In contrast, as-grown nanowire samples show only residual magnetization, due to nanowire orientation dependence of magnetization.

Spectroscopic and magnetic properties of colloidal transition metal-doped transparent conducting oxide nanocrystals as building blocks for spintronic materials

The synthesis of colloidal Cr3+-doped In2O3 NCs with the body-centered cubic bixbyte-type crystal structure, and Cr3+-doped SnO2 NCs with the rutile crystal structure was described. Ligand-field electronic absorption spectroscopy suggests that Cr3+ dopants have quasi-octahedral coordination in both In2O3 and SnO2 NC host lattices. Unlike free-standing nanocrystals, the nanocrystalline films fabricated from colloidal Cr3+-doped In2O3 and SnO2 nanocrystals exhibit room temperature ferromagnetism. Analogous magnetic behavior suggests the same origin of ferromagnetic ordering in both materials. The observed ferromagnetism has been related to the existence of extended structural defects, formed at the interfaces between nanocrystals in nanocrystalline films. These structural defects are likely responsible for the formation of charge carriers which mediate the dopant magnetic moment ordering.

Introducing and manipulating magnetic dopant exchange interactions in semiconductor nanowires

The ability to control both spin and charge degrees of freedom in semiconductor nanostructrures is at heart of spintronic and quantum information technologies. Magnetically-doped semiconductor nanowires have emerged as a promising platform for spintronics, which warrants the exploration of their synthesis, electronic structure, and magnetic properties. Here we demonstrate the preparation of manganese-doped GaN and SnO2 nanowires by chemical vapor deposition and solvothermal methods, respectively. The investigation of both systems by electron microscopy and x-ray absorption spectroscopy at ensemble and single nanowire levels indicates that manganese dopants exist in a dual oxidation state, Mn2+ and Mn3+, with Mn2+ being the majority species. X-ray magnetic circular dichroism studies of individual nanowires suggest ferromagnetic interactions of manganese dopants, and the nanowire orientation-dependent magnetization owing to the magnetocrystalline anisotropy. The results of these studies demonstrate quantitative determination of the dopant electronic structure at the molecular level, and allow for a prediction of the magnetic properties of diluted magnetic semiconductor nanowires based on their orientation and geometry.