Shonali Dhingra

Study on the surface energy of graphene by contact angle measurements.

Because of the atomic thinness of graphene, its integration into a device will always involve its interaction with at least one supporting substrate, making the surface energy of graphene critical to its real-life applications. In the current paper, the contact angle of graphene synthesized by chemical vapor deposition (CVD) was monitored temporally after synthesis using water, diiodomethane, ethylene glycol, and glycerol. The surface energy was then calculated based on the contact angle data by the Fowkes, Owens-Wendt (extended Fowkes), and Neumann models. The surface energy of fresh CVD graphene grown on a copper substrate (G/Cu) immediately after synthesis was determined to be 62.2 ± 3.1 mJ/m(2) (Fowkes), 53.0 ± 4.3 mJ/m(2) (Owens-Wendt) and 63.8 ± 2.0 mJ/m(2) (Neumann), which decreased to 45.6 ± 3.9, 37.5 ± 2.3, and 57.4 ± 2.1 mJ/m(2), respectively, after 24 h of air exposure. The ellipsometry characterization indicates that the surface energy of G/Cu is affected by airborne hydrocarbon contamination. G/Cu exhibits the highest surface energy immediately after synthesis, and the surface energy decreases after airborne contamination occurs. The root cause of intrinsically mild polarity of G/Cu surface is discussed.

Graphene Q-Switched Mode-Locked and Q-Switched Ion-Exchanged Waveguide Lasers

In this letter, we present the use of monolayer graphene saturable absorbers to produce Q-switched and Q-switched mode-locked operation of Yb and Yb:Er-doped phosphate glass waveguide lasers, respectively. For the 1535-nm-wavelength Yb:Er laser, the Q-switched pulses have repetition rates up to 526 kHz and contain mode-locked pulses at a repetition frequency of 6.8 GHz. The measured 0.44-nm bandwidth should allow pulses as short as ~6 ps to be generated. Maximum average output powers of 27 mW are obtained at a slope efficiency of 5% in this mode of operation. For the 1057-nm-wavelength Yb laser, Q-switched pulses are obtained with a repetition rate of up to 833 kHz and a maximum average output power of 21 mW. The pulse duration is found to decrease from 292 to 140 ns and the pulse energy increase from 17 to 27 nJ as the incident pump power increases from 220 to 652 mW.

Q-switched operation of a pulsed-laser-deposited Yb:Y 2 O 3 waveguide using graphene as a saturable absorber

The first, to the best of our knowledge, Q-switched operation of a pulsed-laser-deposited waveguide laser is presented. A clad Yb:Y(2)O(3) waveguide was Q-switched using an output coupling mirror coated with a single layer of graphene deposited by atmospheric pressure chemical vapor deposition. During continuous-wave operation, a maximum power of 83 mW at a slope efficiency of 25% was obtained. During Q-switched operation, pulses as short as 98 ns were obtained at a repetition rate of 1.04 MHz and a central wavelength of 1030.8 nm.

456-mW graphene Q-switched Yb:yttria waveguide laser by evanescent-field interaction.

In this Letter, we present a passively Q-switched Yb:Y2O3 waveguide laser using evanescent-field interaction with an atmospheric-pressure-chemical-vapor-deposited graphene saturable absorber. The waveguide, pumped by a broad area diode laser, produced an average output power of 456 mW at an absorbed power of 4.1 W. The corresponding pulse energy and peak power were 330 nJ and 2 W, respectively. No graphene damage was observed, demonstrating the suitability of top-deposited graphene for high-power operation.

Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

Nitrogen vacancy centers in diamond as angle-squared sensors

Nitrogen-vacancy (NV) centers are defects in diamonds, which, due to their electronic structure, have been extensively studied as magnetic field sensors. Such field detection applications usually employ the NV centers to detect field components aligned with the direction of the internally-defined spin axis of the NV center. In this work we detect magnetic fields which are slightly misaligned with the NV center axis. In particular, we demonstrate that the NV center can measure the square of the angle between the magnetic field and the NV center axis with high sensitivity which diverges as the external field approaches a value pre-defined by the NV centers internal parameters, in agreement with predictions. These results show that NV centers could be used as sensitive transducers for making quantum nondemolition (QND) measurements on systems such as nanomechanical oscillators.

Design and construction of a cost-efficient Arduino-based mirror galvanometer system for scanning optical microscopy

Mirror galvanometer systems (galvos) are commonly employed in research and commercial applications in areas involving laser imaging, laser machining, laser-light shows, and others. Here, we present a robust, moderate-speed, and cost-efficient home-built galvo system. The mechanical part of this design consists of one mirror, which is tilted around two axes with multiple surface transducers. We demonstrate the ability of this galvo by scanning the mirror using a computer, via a custom driver circuit. The performance of the galvo, including scan range, noise, linearity, and scan speed, is characterized. As an application, we show that this galvo system can be used in a confocal scanning microscopy system.