Shuailong Zhang

Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array

We report the high-frequency modulation of individual pixels in 8 × 8 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 μ m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxide-semiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 1 × 10-10, using a 450 nm-emitting 24 μm diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.

Enhanced infrared photovoltaic efficiency in PbS nanocrystal/semiconducting polymer composites: 600-fold increase in maximum power output via control of the ligand barrier

We report a comparison of photoconductive performance of PbS nanocrystal/polymer composite devices containing either oleic acid-capped or octylamine capped nanocrystals (NCs). The octylamine-capped NCs allow over two orders of magnitude more photocurrent under −1V bias; they also show an infrared photovoltaic response, while devices using oleic acid-capped NCs do not. Further improvement in the photovoltaic performance of films made with octylamine-capped NCs occurs upon thermally annealing the composite layer at 220 °C for 1 h. The procedure leads to a 200-fold increase in short circuit current, a 600-fold increase in maximum power output, and an order of magnitude faster response time.

1.5 Gbit/s Multi-Channel Visible Light Communications Using CMOS-Controlled GaN-Based LEDs

An on-chip multi-channel visible light communication (VLC) system is realized through a blue (450 nm) GaN-based micron-size light-emitting diode (μLED) array integrated with complementary metal-oxide-semiconductor (CMOS) electronics. When driven by a custom-made CMOS driving board with 16 independent parallel data input ports, this μLED array device is computer controllable via a standard USB interface and is capable of delivering high speed parallel data streams for VLC. A total maximum error-free data transmission rate of 1.5 Gbit/s is achieved over free space by modulating four μLED pixels simultaneously using an on-off key non-return to zero modulation scheme. Electrical and optical crosstalk of the system has also been investigated in detail and the further optimization of CMOS design to minimize the crosstalk is proposed.

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressable 10 × 10 micro-pixelated LED (μLED) arrays with pixel diameters of 45 μm and peak emission at ∼470 nm have been demonstrated. The electrical and optical properties of these μLEDs were compared with those of broad-area LEDs fabricated from the same epistructure. The μLEDs can sustain a much higher current density, up to 6.6 kA/cm2, before thermal rollover. Also, the fabricated μLEDs show good pixel-to-pixel uniformity, which demonstrates potential for low-cost micro-displays. Furthermore, these μLEDs demonstrate a high electrical-to-optical modulation bandwidth of up to ∼270 MHz and are suitable for visible light communication at data transmission rate up to 400 Mbit/s. The electrical-to-optical modulation bandwidth of the μLEDs increases rapidly with injection currents less than ∼6 mA, temporarily saturates at injection currents of ∼6 to ∼35 mA, and gradually increases again with injection currents up to 110 mA. Carrier density dependent recombination processes are responsible for the bandwidth increase at low current, the resistance-capacitance product determines the modulation bandwidth in the saturation region, and self-heating, which changes series resistance of μLEDs, may cause a further bandwidth increase at high current.

Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.

Size-dependent capacitance study on InGaN-based micro-light-emitting diodes

We report a detailed study on size-dependent capacitance, especially the negative capacitance (NC), in InGaN-based micro-pixelated light-emitting diodes (μLEDs). Similar to conventional broad-area LEDs, μLEDs show NC under large forward bias. In the conventional depletion and diffusion capacitance regimes, a good linear relationship of capacitance with device size is observed. However, the NC under high forward bias shows slight deviation from above-mentioned linear relationship with device size. This behaviour can be understood if the effects of current density and junction temperature on NC are considered. The measured temperature dependence and frequency dispersion of the capacitance underpin this point of view. The NCs of two reference broad-area LEDs were also measured and compared with that of μLED clusters with the same total size. A stronger NC effect is observed in the μLED clusters, which is attributed to the increased number of sidewall defects during fabrication process.

High-speed underwater optical wireless communication using a blue GaN-based micro-LED

High-speed underwater optical wireless communication (UOWC) was achieved using an 80 μm blue-emitting GaN-based micro-LED. The micro-LED has a peak emission wavelength of ~440 nm and an underwater power attenuation of 1 dB/m in tap water. The -3 dB electrical-to-optical modulation bandwidth of the packaged micro-LED increases with increasing current and saturates at ~160 MHz. At an underwater distance of 0.6 m, 800 Mb/s data rate was achieved with a bit error rate (BER) of 1.3 × 10-3, below the forward error correction (FEC) criteria. And we obtained 100 Mb/s data communication speed with a received light output power of -40 dBm and a BER of 1.9 × 10-3, suggesting that UOWC with extended distance can be achieved. Through reflecting the light emission beam by mirrors within a water tank, we experimentally demonstrated a 200 Mb/s data rate with a BER of 3.0 × 10-6 at an underwater distance of 5.4 m.

High-speed GaN micro-LED arrays for data communications

We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.

Hybrid organic/GaN photonic crystal light-emitting diode

Periodically nano-patterned organic films incorporating color converting light-emitting polymers have been integrated onto InGaN/GaN light-emitting diodes (LEDs). Polarized and strongly modified hybrid LED emission is observed due to the photonic crystal effect of the nano-pattern. Emission characteristics are appropriate for various applications, and fast modulation capability with an optical −3 dB bandwidth of 168 MHz is demonstrated.

Manipulating and assembling metallic beads with Optoelectronic Tweezers

Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10−9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.