Shuangsuo Mao

From dead leaves to sustainable organic resistive switching memory

An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good write-read-erase-read stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM).

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)n/SCO/Ti (n=0, 1, 2, 3) structures. It is found that the as-prepared device...

Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In 2 S 3 /Mo/Glass Devices

The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In2S3/Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.

A resistance ratio persistently increasing and repeatable nonvolatile memory in AZO/CZTSe/FTO resistive switching devices

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in ...