Shurong Wang

Comparative study of AZO and ITO thin film sputtered at different temperatures and their application in Cu2ZnSnS4 solar cells

Indium tin oxide (ITO) and Al-doped ZnO (AZO) are the most common materials for transparent conducting films used as a front contact layer on solar cells. In this study, AZO and ITO thin films were deposited by sputtering under different temperatures in order to study the difference between two kinds of thin films in crystal structure, morphology, optical and electrical properties. In the same time, CZTS solar cells were also fabricated using AZO or ITO thin films as the window layers, and the obtained highest efficiencies of 3.66% and 5.12% are based on AZO and ITO window layers with different sputtering temperatures, respectively.

Effect of Sulfurization Time on the Structural and Optical Properties of Cu2ZnSnS4 Thin Films

Cu2ZnSnS4 (CZTS) thin films were successfully prepared by magnetron sputtering. The composition, phase structure, surface morphology and optical properties of the CZTS thin films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and ultraviolet visible spectrophotometer (UV-VIS). The result shows that: when the sulfurization time was 15 minutes, the atomic ratio was closed to the stoichiometric ratio of CZTS thin films, and the surface morphology of the film was homogeneous and compacted with the good uniformity. The grown films exhibit strong preferential orientation along (112) plane. As-obtained CZTS films have obvious absorptions under the visible light, and after the sufficient sulfurization, the band gap remains constant with the increase of sulfurization time.

Crystalline Structure and Optical Properties of Cd1-xZnxS Thin Films Prepared by CBD

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition. The influence of x on the crystalline structure, surface morphology and optical properties of Cd1-xZnxS thin films were studied by measures of XRD, SEM, and spectrophotometer, respectively. The SEM images indicated that, with the increase of x, the particles of Cd1-xZnxS changed from small and compact to larger and sparser, which was thought to be the transformation of two reaction mechanisms in the deposition process, from ion-by-ion process to cluster-by-cluster process. The average transmittance values of Cd1-xZnxS samples in visible spectrum were all above 70%, and the band gaps of the Cd1-xZnxS thin films varied from 2.47 eV to 3.66 eV during the x from 0 to 1.