Shuwan Pan

Novel Photoluminescence from Porous SiGe/Si Multilayer Structure

The optical properties of porous SiGe/Si multilayer films prepared through electrochemical anodization have been investigated. The visible luminescence spectra with multiple emission peaks have been detected in the temperature range from 10 K to room temperature. Photoluminescence (PL) with narrow band width is observed due to the wavelength selective effect of the microcavity. The resonance of the microcavity is confirmed by the temperature dependent PL measurement and the reflectance spectrum, which is consisted with the prediction from the thermo-optic effect.

Structural and Optical Properties of Porous SiGe/Si Multilayer Films

Conference Name:10th China Semiconductor Technology International Conference 2011, CSTIC 2011. Conference Address: Shanghai, China. Time:March 13, 2011 - March 14, 2011.

Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

Nation Natural Science Foundation of China [61176050, 61036003, 61176092, 60837001]; National Basic Research Program of China [2012CB933503]; Fundamental Research Funds for the Central Universities [2010121056]

Preparation for Si/Se/Si sandwich structure on Si (001)

A Si/Se/Si sandwich structure was prepared by ultra-high vacuum chemical vapor deposition. A red photoluminescence with narrow width was observed in the Si/Se/Si structure, which may be related to the band-to-band transition.

Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy

SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.