Shw Steinar Wouters

Performance predictions of a focused ion beam from a laser cooled and compressed atomic beam

Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of amongst others the flux density of the atomic beam, the temperature of this beam and the total current. At low currents (I<10 pA) the spot size will be limited by a combination of spherical aberration and brightness, while at higher currents this is a combination of chromatic aberration and brightness. It is expected that a nanometer size spot is possible at a current of 1 pA. The analytical model was verified with particle tracing simulations of a complete focused ion beam setup. A genetic algorithm was used to find the optimum acceleration electric field as a function of the current. At low currents the result agrees well with the analytical model while at higher currents the spot sizes found are even lower due to effects that are not taken into account in the analytical model.

Unraveling the temperature and voltage dependence of magnetic field effects in organic semiconductors

In recent years, it was discovered that the current through an organic semiconductor, sandwiched between two non-magnetic electrodes, can be changed significantly by applying a small magnetic field. This surprisingly large magnetoresistance effect, often dubbed as organic magnetoresistance (OMAR), has puzzled the young field of organic spintronics during the last decade. Here, we present a detailed study on the voltage and temperature dependence of OMAR, aiming to unravel the lineshapes of the magnetic field effects and thereby gain a deeper fundamental understanding of the underlying microscopic mechanism. Using a full quantitative analysis of the lineshapes, we are able to extract all linewidth parameters and the voltage and temperature dependencies are explained with a recently proposed trion mechanism. Moreover, explicit microscopic simulations show a qualitative agreement to the experimental results.