Simon Frederick

Resonant scattering and second-harmonic spectroscopy of planar photonic crystal microcavities

The resonant modes of two-dimensional planar photonic crystal microcavities patterned in a free-standing InP slab are probed in a novel fashion using a long working distance microscope objective to obtain cross-polarized resonant scattering and second-harmonic spectra. We show that these techniques can be used to do rapid effective assays of large arrays of microcavities that do not necessarily contain resonant light-emitting layers. The techniques are demonstrated using microcavities comprised of single missing-hole defects in hexagonal photonic crystal hosts formed with elliptically shaped holes. These cavities typically support two orthogonally polarized resonant modes, and the resonant scattering and harmonic spectra are well fitted using a coherent sum of Lorentzian functions. The well-defined coherence between the two resonant features is explained in terms of a microscopic harmonic oscillator model. The relative merits of these techniques are quantitatively compared with the more commonly used cavi...

Nanowire coupling to photonic crystal nanocavities for single photon sources

We demonstrate highly efficient evanescent coupling via a silica loop-nanowire, to ultra-small quantum-dot photonic-crystal cavities. It enables the tuning of both the Q-factor and the wavelength of the cavity mode independently.

Postfabrication fine-tuning of photonic crystal microcavities in InAs∕InP quantum dot membranes

A method to fine-tune photonic crystal defect cavities is developed based on successive oxidation and wet etching cycles. Photonic crystal microcavities based on InP membranes are oxidized using an ultraviolet (UV)/ozone treatment, and the oxide is subsequently removed using a hydrofluoric acid solution. Each oxidation/etch cycle consumes a thin layer of InP directly exposed to the UV/ozone, enlarging the radius of holes in the photonic crystal and decreasing the membrane thickness. The method is applied to single missing air-hole defect cavities with embedded InAs quantum dots, permitting measurement of the resonant frequency tuning in emission. Defect mode energies were found to blueshift 1.74meVpercycle, consistent with finite-difference time-domain simulations. A tuning range of 33meV was obtained after 20cycles.

Fabrication and optical characterization of hexagonal photonic crystal microcavities in InP-based membranes containing InAs∕InP quantum dots

Hexagonal photonic crystal microcavities with missing-hole defects were fabricated in suspended InP membranes. Embedded InAs quantum dots were utilized as broadband emitters to characterize the modes of the cavities. Photoluminescence emission consists of two orthogonally polarized peaks corresponding to the two dipole modes of the hexagonal defect cavity of reduced symmetry. The emission wavelength ranges from 745 to 840 meV, depending on the crystal structure, and quality factors are up to 850. Finite-difference time-domain simulations reproduce the cavity mode energies and the quality factor dependence on the crystal structure, but predict quality factors systematically lower. The experimental quality factors and mode splittings are associated with a slight ellipticity of the lattice holes.

Experimental demonstration of high quality factor, x-dipole modes in InAs∕InP quantum dot photonic crystal microcavity membranes

The authors study the quality factor Q of the x-dipole mode in single missing hole defect photonic crystal microcavities in InAs∕InP quantum dot membranes as a function of the structural design parameters. Photoluminescence experiments show an optimized Q in excess of 28 000 for a wavelength close to λ=1550nm. This is to be compared with a Q of 57 000 determined by finite difference time domain calculations. The fabrication tolerances necessary to achieve experimental Q values close to those predicted by theory are identified.

Enhanced photonic crystal cavity-waveguide coupling using local slow-light engineering.

This Letter introduces an enhanced cavity-waveguide coupling architecture based upon slow-light engineering in a two-port photonic crystal system. After analyzing the system transmittance using coupled-mode theory, the system is probed experimentally and shown to have increased transmittance due to the enhanced cavity-waveguide coupling. Such a coupling architecture may facilitate next-generation planar lightwave circuitry such as onchip quantum information processing or high precision light-matter sensing applications.

Optical study of lithographically defined, subwavelength plasmonic wires and their coupling to embedded quantum emitters.

We present an optical investigation of surface plasmon polaritons propagating along nanoscale Au-wires, lithographically defined on GaAs substrates. A two-axis confocal microscope was used to perform spatially and polarization resolved measurements in order to confirm the guiding of surface plasmon polaritons over lengths ranging from 5 to 20 μm along nanowires with a lateral dimension of only ≈ 100 nm. Finite difference time domain simulations are used to corroborate our experimental observations, and highlight the potential to couple proximal quantum emitters to propagating plasmon modes in such extreme subwavelength devices. Our findings are of strong relevance for the development of semiconductor based integrated plasmonic and active quantum plasmonic nanosystems that merge quantum emitters with nanoscale plasmonic elements.

Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides

The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide, we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, an ∼21× enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ∼4×. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources.

Modified single missing air-hole defects in InAs/InP quantum dot membrane photonic crystal microcavities

Hexagonal lattice photonic crystal microcavities with modified single missing air-hole defects were fabricated in suspended InAs∕InP quantum dot membranes. The cavity modes predicted from finite-difference time-domain simulations are observed in photoluminescence measurements. The resonant energies of the defect modes are tuned across the band gap of the photonic crystal through modifications of the size and position of the inner ring holes surrounding the defect. Up to a 20-fold enhancement of the quality factor of the modes are observed as they are tuned across the band gap, with measured Q values of up to 6000.

III-V access waveguides using atomic layer deposition

Normally, the larger refractive index contrast of silicon-on-insulator (SOI) photonics used for transporting highly confined optical modes is not available in compound semiconductor systems because the optically active layer rests upon an epitaxial support layer having a similar refractive index. Here, a semiconductor-under-insulator (SUI) technology for compound semiconductor membrane photonic circuitry is presented. It will be shown that such a technology can facilitate the transport of highly confined optical modes in compound semiconductor systems and is anticipated to be a critical part of future scalable quantum photonics applications.