Simon Kurasch

Atomic structure of reduced graphene oxide.

Using high resolution transmission electron microscopy, we identify the specific atomic scale features in chemically derived graphene monolayers that originate from the oxidation-reduction treatment of graphene. The layers are found to comprise defect-free graphene areas with sizes of a few nanometers interspersed with defect areas dominated by clustered pentagons and heptagons. Interestingly, all carbon atoms in these defective areas are bonded to three neighbors maintaining a planar sp(2)-configuration, which makes them undetectable by spectroscopic techniques. Furthermore, we observe that they introduce significant in-plane distortions and strain in the surrounding lattice.

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

Using first-principles atomistic simulations, we study the response of atomically thin layers of transition metal dichalcogenides (TMDs)--a new class of two-dimensional inorganic materials with unique electronic properties--to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to an 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs.

Synthesis of Monolayer‐Patched Graphene from Glucose

The extraordinary electronic and mechanical properties of graphene have stimulated intense research on developing simple methods for the large-scale synthesis of graphene. High-quality large-area graphene films prepared by the chemical vapor deposition of various carbon-containing molecules on arbitrary substrates could meet the requirements of large-area electronic applications. For the industrial production of conductive graphene powder on the ton scale, 11–13] the chemical exfoliation of graphite minerals still remains the main manufacturing path. On the other hand, the exclusive two-dimensional polymerization of graphene-like structures from simple monomers still presents a challenge for carbon chemists. Further fine-tuning of the Fermi level of graphene by doping offers a way to control the electronic structure of carbonaceous materials and is of major interest for their application in electronics, electrodes, and catalysis. The electronic properties of doped graphene are strongly linked to the dopant concentration, which is only poorly controlled by current methods. It is therefore highly challenging but desirable to develop effective approaches for fabricating graphene that is cheap yet of high quality (e.g. high surface area, high conductivity, doping level, and uniform morphology) in a controlled manner. Herein we report a simple yet versatile approach for the synthesis of two-dimensional (2D) carbon materials ranging from free-standing monolayers to oligolayered graphene by the calcination of glucose, a most abundant, sustainable compound. In this synthesis only dicyandiamide (DCDA) was added for the temporary in situ formation of layered graphic carbon nitride (g-C3N4), which serves as a sacrificial template. This approach is also facile for gradually tuning the concentration of the nitrogen dopant in a broader range without disturbing the morphology of graphene. In a typical synthesis, the two-step heating of a mixture of DCDA and glucose under a protective flow of N2 directly resulted in freestanding graphene with a yield of 28–60% (calculated based on added carbon from glucose). The overall formation process is depicted in Figure 1: Thermal condensation of DCDA creates a layered carbon

Experimental analysis of charge redistribution due to chemical bonding by high-resolution transmission electron microscopy

The electronic charge density distribution or the electrostatic atomic potential of a solid or molecule contains information not only on the atomic structure, but also on the electronic properties, such as the nature of the chemical bonds or the degree of ionization of atoms. However, the redistribution of charge due to chemical bonding is small compared with the total charge density, and therefore difficult to measure. Here, we demonstrate an experimental analysis of charge redistribution due to chemical bonding by means of high-resolution transmission electron microscopy (HRTEM). We analyse charge transfer on the single-atom level for nitrogen-substitution point defects in graphene, and confirm the ionicity of single-layer hexagonal boron nitride. Our combination of HRTEM experiments and first-principles electronic structure calculations opens a new way to investigate electronic configurations of point defects, other non-periodic arrangements or nanoscale objects that cannot be studied by an electron or X-ray diffraction analysis.

Stone-Wales-type transformations in carbon nanostructures driven by electron irradiation

Observations of topological defects associated with Stone-Wales–type transformations (i.e., bond rotations) in high resolution transmission electron microscopy (HRTEM) images of carbon nanostructures are at odds with the equilibrium thermodynamics of these systems. Here, by combining aberration-corrected HRTEM experiments and atomistic simulations, we show that such defects can be formed by single electron impacts, and remarkably, at electron energies below the threshold for atomic displacements. We further study the mechanisms of irradiation-driven bond rotations, and explain why electron irradiation at moderate electron energies (∼100 keV) tends to amorphize rather than perforate graphene. We also show via simulations that Stone-Wales defects can appear in curved graphitic structures due to incomplete recombination of irradiation-induced Frenkel defects, similar to formation of Wigner-type defects in silicon.

Atom-by-Atom Observation of Grain Boundary Migration in Graphene

Grain boundary (GB) migration in polycrystalline solids is a materials science manifestation of survival of the fittest, with adjacent grains competing to add atoms to their outer surfaces at each others expense. This process is thermodynamically favored when it lowers the total GB area in the sample, thereby reducing the excess free energy contributed by the boundaries. In this picture, a curved boundary is expected to migrate toward its center of curvature with a velocity proportional to the local radius of boundary curvature (R). Investigating the underlying mechanism of boundary migration in a 3D material, however, has been reserved for computer simulation or analytical theory, as capturing the dynamics of individual atoms in the core region of a GB is well beyond the spatial and temporal resolution limits of current characterization techniques. Here, we similarly overcome the conventional experimental limits by investigating a 2D material, polycrystalline graphene, in an aberration-corrected transmission electron microscope, exploiting the energy of the imaging electrons to stimulate individual bond rotations in the GB core region. The resulting morphological changes are followed in situ, atom-by-atom, revealing configurational fluctuations that take on a time-averaged preferential direction only in the presence of significant boundary curvature, as confirmed by Monte Carlo simulations. Remarkably, in the extreme case of a small graphene grain enclosed within a larger one, we follow its shrinkage to the point of complete disappearance.

Imaging Atomic Rearrangements in Two-Dimensional Silica Glass: Watching Silica’s Dance

Glassy Eyed In crystalline materials, the collective motion of atoms in one- and two-dimensional defects—like dislocations and stacking faults—controls the response to an applied strain, but how glassy materials change their structure in response to strain is much less clear. Huang et al. (p. 224; see the Perspective by Heyde) used advanced-transmission electron microscopy to investigate the structural rearrangements in a two-dimensional glass, including the basis for shear deformations and the atomic behavior at the glass/liquid interface. Dynamics of individual atoms in a two-dimensional silicate glass have been observed using transmission electron microscopy. [Also see Perspective by Heyde] Structural rearrangements control a wide range of behavior in amorphous materials, and visualizing these atomic-scale rearrangements is critical for developing and refining models for how glasses bend, break, and melt. It is difficult, however, to directly image atomic motion in disordered solids. We demonstrate that using aberration-corrected transmission electron microscopy, we can excite and image atomic rearrangements in a two-dimensional silica glass—revealing a complex dance of elastic and plastic deformations, phase transitions, and their interplay. We identified the strain associated with individual ring rearrangements, observed the role of vacancies in shear deformation, and quantified fluctuations at a glass/liquid interface. These examples illustrate the wide-ranging and fundamental materials physics that can now be studied at atomic-resolution via transmission electron microscopy of two-dimensional glasses.

Atomic scale study of the life cycle of a dislocation in graphene from birth to annihilation

Dislocations, one of the key entities in materials science, govern the properties of any crystalline material. Thus, understanding their life cycle, from creation to annihilation via motion and interaction with other dislocations, point defects and surfaces, is of fundamental importance. Unfortunately, atomic-scale investigations of dislocation evolution in a bulk object are well beyond the spatial and temporal resolution limits of current characterization techniques. Here we overcome the experimental limits by investigating the two-dimensional graphene in an aberration-corrected transmission electron microscope, exploiting the impinging energetic electrons both to image and stimulate atomic-scale morphological changes in the material. The resulting transformations are followed in situ, atom-by-atom, showing the full life cycle of a dislocation from birth to annihilation. Our experiments, combined with atomistic simulations, reveal the evolution of dislocations in two-dimensional systems to be governed by markedly long-ranging out-of-plane buckling.

Atomistic Description of Electron Beam Damage in Nitrogen-Doped Graphene and Single-Walled Carbon Nanotubes

By combining ab initio simulations with state-of-the-art electron microscopy and electron energy loss spectroscopy, we study the mechanism of electron beam damage in nitrogen-doped graphene and carbon nanotubes. Our results show that the incorporation of nitrogen atoms results in noticeable knock-on damage in these structures already at an acceleration voltage of 80 kV, at which essentially no damage is created in pristine structures at corresponding doses. Contrary to an early estimate predicting rapid destruction via sputtering of the nitrogen atoms, in the case of substitutional doping, damage is initiated by displacement of carbon atoms neighboring the nitrogen dopant, leading to the conversion of substitutional dopant sites into pyridinic ones. Although such events are relatively rare at 80 kV, they become significant at higher voltages typically used in electron energy loss spectroscopy studies. Correspondingly, we measured an energy loss spectrum time series at 100 kV that provides direct evidence for such conversions in nitrogen-doped single-walled carbon nanotubes, in excellent agreement with our theoretical prediction. Besides providing an improved understanding of the irradiation stability of these structures, we show that structural changes cannot be neglected in their characterization employing high-energy electrons.

A Universal Scheme to Convert Aromatic Molecular Monolayers into Functional Carbon Nanomembranes

Free-standing nanomembranes with molecular or atomic thickness are currently explored for separation technologies, electronics, and sensing. Their engineering with well-defined structural and functional properties is a challenge for materials research. Here we present a broadly applicable scheme to create mechanically stable carbon nanomembranes (CNMs) with a thickness of ~0.5 to ~3 nm. Monolayers of polyaromatic molecules (oligophenyls, hexaphenylbenzene, and polycyclic aromatic hydrocarbons) were assembled and exposed to electrons that cross-link them into CNMs; subsequent pyrolysis converts the CNMs into graphene sheets. In this transformation the thickness, porosity, and surface functionality of the nanomembranes are determined by the monolayers, and structural and functional features are passed on from the molecules through their monolayers to the CNMs and finally on to the graphene. Our procedure is scalable to large areas and allows the engineering of ultrathin nanomembranes by controlling the composition and structure of precursor molecules and their monolayers.