Simon Rivier

Enhanced second-harmonic generation from double resonant plasmonic antennae

We present a novel plasmonic antenna geometry - the double resonant antenna (DRA) - that is optimized for second-harmonic generation (SHG). This antenna is based on two gaps coupled to each other so that a resonance at the fundamental and at the doubled frequency is obtained. Furthermore, the proximity of the localized hot spots allows for a coupling and spatial overlap between the two field enhancements at both frequencies. Using such a structure, both the generation of the second-harmonic and its re-emission into the far-field are significantly increased when compared with a standard plasmonic dipole antenna. Such DRA are fabricated in aluminium using electron beam lithography and their linear and nonlinear responses are studied experimentally and theoretically.

Yb-doped KY(WO4)2 planar waveguide laser

High-quality monoclinic KY(WO4)2 optical waveguides were grown by liquid-phase epitaxy, and laser operation of an Yb-doped KY(WO4)2 waveguide was demonstrated for the first time to our knowledge. Continuous-wave laser emission near 1 microm was achieved with both surface and buried planar waveguides. An output power of 290 mW was obtained in the fundamental mode and the slope efficiency was above 80%.

Passive mode locking of Yb:KLuW using a single-walled carbon nanotube saturable absorber

Mode locking of an Yb-doped bulk laser in the 1 microm spectral range using a single-walled carbon nanotube saturable absorber (SWCNT-SA) is demonstrated for the first time, to our knowledge. Passive mode locking of an Yb:KLuW laser resulted in nearly transform-limited pulses as short as 115 fs at 1048 nm. In addition, the nonlinear response of the SWCNT-SA was measured, yielding a modulation depth of 0.25% and a relaxation time of 750 fs.

Double Tungstate Lasers: From Bulk Toward On-Chip Integrated Waveguide Devices

It has been recognized that the monoclinic double tungstates KY(WO4)2, KGd(WO4)2, and KLu(WO4)2 possess a high potential as rare-earth-ion-doped solid-state laser materials, partly due to the high absorption and emission cross sections of rare-earth ions when doped into these materials. Besides, their high refractive indexes make these materials potentially suitable for applications that require optical gain and high power in integrated optics, with rather high integration density. We review the recent advances in the field of bulk lasers in these materials and present our work toward the demonstration of waveguide lasers and their integration with other optical structures on a chip.

Spectroscopy and Lasing of Yb-Doped

Tetragonal (space group f4 macr) single crystals of NaY(WO4)2 doped with Yb to a density of 4.52 times 1020 cm-3 have been employed as laser active materials for the 1-mum spectral range, operating at room temperature. Using Ti:sapphire laser pumping, slope efficiencies as high as 74.6% were achieved without special cooling for the pi-polarization. The Yb-laser was continuously tunable from 1003.7 to 1073.0 nm with a birefringent filter. Pulses as short as 53 fs were obtained at 1035 nm by SESAM passive mode-locking with intracavity dispersion compensation and additional extracavity pulse compression using analogous prism pairs. Experimental data on the spectroscopic properties of Yb3+ in the 5-300 K temperature range and the room temperature optical properties of this novel Yb-host is also presented.

{\hbox {NaY}}{({\hbox {WO}}_{4})}_{2}

We demonstrate passive mode locking based on the novel monoclinic double tungstate crystal Yb:KLu(WO4)2. We report the shortest pulses ever produced with an Yb-doped tungstate laser using a semiconductor saturable absorber. A pulse duration of 81 fs has been achieved for an average power of 70 mW at 1046 nm. We compare the performance of the polarization oriented parallel to the Nm- and Np-crystallo-optic axes. Results in the femtosecond and picosecond regime are presented applying either Ti:sapphire or diode laser pumping. The great potential of Yb:KLu(WO4)2 as an active medium for ultrashort pulses is demonstrated for the first time, to our knowledge.

: Tunable and Femtosecond Mode-Locked Laser Operation

Transmission- and reflection-type single-walled carbon nanotube saturable absorbers (SWCNT-SAs) were designed and fabricated for passive mode-locking of bulk lasers in the 1 microm spectral range. Mode-locked laser operation based on a diffusion-bonded Yb:KYW/KYW crystal was demonstrated, and pulses as short as 83 fs and 140 fs were achieved applying reflection-type and transmission-type SWCNT-SA, respectively. The nonlinear parameters of the absorbers were measured to be in close vicinity to those of a semiconductor saturable absorber mirror for the same wavelength range. Mode-locking performance with SWCNT-SAs and the SESAM was compared utilizing the same cavity, with the SESAM resulting in only slightly shorter pulses of 66 fs duration. The nearly identical performance indicates that well-optimized SWCNT-SAs can substitute SESAMs even in the 1 microm region.

Passively mode-locked Yb:KLu(WO4)2 oscillators.

Epitaxial monoclinic double tungstate composites based on the strongly anisotropic KLu(WO/sub 4/)/sub 2/ (KLuW) were grown with high crystalline quality and laser operation of ytterbium was demonstrated for the first time. Highly efficient CW laser emission of an Yb:KLuW-KLuW crystal was achieved near 1030 nm. The 100-/spl mu/m-thick Yb:KLuW layer was pumped at wavelengths near 980 nm by a tapered diode laser as well as by a Ti:sapphire laser. More than 500 mW of CW output power and slope efficiencies up to 66% were obtained at room temperature without cooling.

Sub-100 fs single-walled carbon nanotube saturable absorber mode-locked Yb-laser operation near 1 µm

Single-pass pumping of a thin disk consisting of an only 50 microm thick epitaxial layer of 32 at.% Yb-doped KLu(WO(4))(2) grown on a 0.35 mm thick undoped KLu(WO(4))(2) substrate is demonstrated. The thin-disk laser delivered 9 W of continuous wave output power near 1030 nm with a slope efficiency of 77%.

Laser operation of epitaxially grown Yb:KLu(WO/sub 4/)/sub 2/--KLu(WO/sub 4/)/sub 2/ composites with monoclinic Crystalline structure

Passive mode locking of the ytterbium doped orthovanadate crystal Yb:LuVO(4) is reported for the first time. We demonstrate what we believe to be the shortest pulses directly generated with an Yb-doped crystalline laser using a semiconductor saturable absorber. The pulses at 1036 nm have a duration as short as 58 fs for an average power of 85 mW.