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The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3–BiFeO3 heterostructures

We characterized the interfaces of heterostructures with different stack sequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealing sharp and rough interfaces, respectively. Magnetometry and magnetoresistance measurements do not show a detectable exchange bias coupling for the multistack with sharp interface. Instead, the heterostructures with rough and chemically intermixed interfaces exhibit a sizable exchange bias coupling. Furthermore, we find a temperature-dependent irreversible magnetization behavior and an exponential decay of coercive and exchange bias field with temperature suggesting a possible spin-glass-like state at the interface of both stacks.

Direct imaging of delayed magneto-dynamic modes induced by surface acoustic waves

The magnetoelastic effect—the change of magnetic properties caused by the elastic deformation of a magnetic material—has been proposed as an alternative approach to magnetic fields for the low-power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Here, we have studied the effect of dynamic strain accompanying a surface acoustic wave on magnetic nanostructures in thermal equilibrium. We have developed an experimental technique based on stroboscopic X-ray microscopy that provides a pathway to the quantitative study of strain waves and magnetization at the nanoscale. We have simultaneously imaged the evolution of both strain and magnetization dynamics of nanostructures at the picosecond time scale and found that magnetization modes have a delayed response to the strain modes, adjustable by the magnetic domain configuration. Our results provide fundamental insight into magnetoelastic coupling in nanostructures and have implications for the design of strain-controlled magnetostrictive nano-devices.Understanding the effects of local dynamic strain on magnetization may help the development of magnetic devices. Foerster et al. demonstrate stroboscopic imaging that allows the observation of both strain and magnetization dynamics in nickel when surface acoustic waves are driven in the substrate.

Investigation of the Dzyaloshinskii-Moriya interaction and room temperature skyrmions in W/CoFeB/MgO thin films and microwires

Recent studies have shown that material structures, which lack structural inversion symmetry and have high spin-orbit coupling can exhibit chiral magnetic textures and skyrmions which could be a key component for next generation storage devices. The Dzyaloshinskii-Moriya Interaction (DMI) that stabilizes skyrmions is an anti-symmetric exchange interaction favoring non-collinear orientation of neighboring spins. It has been shown that materials systems with high DMI can lead to very efficient domain wall and skyrmion motion by spin-orbit torques. To engineer such devices, it is important to quantify the DMI for a given material system. Here, we extract the DMI at the Heavy Metal/Ferromagnet interface using two complementary measurement schemes, namely, asymmetric domain wall motion and the magnetic stripe annihilation. By using the two different measurement schemes, we find for W(5 nm)/Co20Fe60B20(0.6 nm)/MgO(2 nm) the DMI to be 0.68 ± 0.05 mJ/m2 and 0.73 ± 0.5 mJ/m2, respectively. Furthermore, we show tha...

Direct observation of temperature dependent magnetic domain structure of the multiferroic La0.66Sr0.34MnO3/BiFeO3 bilayer system by x-ray linear dichroism- and x-ray magnetic circular dichroism-photoemission electron microscopy

Low-thickness La0.66Sr0.34MnO3 (LSMO)/BiFeO3 (BFO) thin film samples deposited on SrTiO3 were imaged by high resolution x-ray microscopy at different temperatures. The ultra-thin thickness of the top layer allows to image both the ferromagnetic domain structure of LSMO and the multiferroic domain structure of the buried BFO layer, opening a path to a direct observation of coupling at the interface on a microscopic level. By comparing the domain size and structure of the BFO and LSMO, we observed that, in contrast to LSMO single layers, LSMO/BFO multilayers show a strong temperature dependence of the ferromagnetic domain structure of the LSMO. Particularly, at 40 K, a similar domain size for BFO and LSMO is observed. This indicates a persistence of exchange coupling on the microscopic scale at a temperature, where the exchange bias as determined by magnetometer measurements is vanishing.

Domain wall transformations and hopping in La0.7Sr0.3MnO3 nanostructures imaged with high resolution x-ray magnetic microscopy

We investigate the effect of electric current pulse injection on domain walls in La(0.7)Sr(0.3)MnO(3) (LSMO) half-ring nanostructures by high resolution x-ray magnetic microscopy at room temperature. Due to the easily accessible Curie temperature of LSMO, we can employ reasonable current densities to induce the Joule heating necessary to observe effects such as hopping of the domain walls between different pinning sites and nucleation/annihilation events. Such effects are the dominant features close to the Curie temperature, while spin torque is found to play a small role close to room temperature. We are also able to observe thermally activated domain wall transformations and we find that, for the analyzed geometries, the vortex domain wall configuration is energetically favored, in agreement with micromagnetic simulations.

Efficient spin transfer torque in La2/3Sr1/3MnO3 nanostructures

We carry out low temperature magnetotransport measurements on nanostructured La2/3Sr1/3MnO3 wires to study the interaction between spin-polarized current and magnetization in this half metallic material. We selectively position domain walls by applying external fields. The domain wall resistance is found to be positive, in contrast to conventional 3d metals. The depinning field is reduced when current pulses are injected into the wire. By comparing measurements for both current polarities, we can disentangle heating and spin transfer torque effects. The determined spin transfer torque efficiency is of the order of 4 × 10−14 Tm2/A, which is significantly higher than in permalloy.

Conductance control at the LaAlO3/SrTiO3-interface by a multiferroic BiFeO3 ad-layer

Multilayered BiFeO3 (BFO)/LaAlO3 (LAO) thin film samples were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and a hysteretic behavior with respect to the voltages applied in the scanning process. This is evidence for the ferroelectric polarization of the multiferroic causing the resistance changes. Coupling the antiferromagnetic BFO layer to another ferromagnetic layer could enable a magnetic field control of the conductance of the quasi-2DEG at t...

ELECTRICAL-FIELD CONTROL OF MAGNETISM MEDIATED BY STRAIN IN Ni NANOSTRUCTURES FABRICATED ON PRE-POLED PMN-PT (011)

We investigate the effects of piezoelectric-generated strain on the magnetization configuration of Ni nanostructures fabricated on pre-poled piezoelectric (011) [Pb(Mg0.33Nb0.66)O3]0.68–[PbTiO3]0.32 (PMN–PT) by high resolution X-ray microscopy. We observe a strong uniaxial anisotropy in the Ni nanostructures, due to the relaxation of the substrate following the deposition of the Ni. The anisotropy can be modified by the application of an electric field to the piezoelectric substrate (thus generating a piezoelectric strain in the system) through the magneto-elastic effect. By applying an electric field to the PMN–PT, the magnetization configuration in nanostructured Ni squares and rings was reversibly manipulated with a high reproducibility.

Spin textures patterned via thermally assisted magnetic scanning probe lithography for magnonics

Magnonics represents a promising alternative to conventional electronics for the development of energy efficient computing platforms. In this context, the nanoscale engineering of spin textures is highly appealing for the development and realization of new nanomagnonic device concepts. Here, we show that reconfigurable nanopatterned spin textures can be used to manipulate spin waves. Magnetic domains and domain walls are written by thermally assisted magnetic scanning probe lithography (tam-SPL) in exchange bias systems. In such structures, we demonstrate through microfocused Brillouin Light Scattering and time resolved scanning transmission X-ray microscopy measurements, the channeling and propagation of confined spin waves. This work opens the way to the use of engineered spin-textures as building blocks of magnonics computing devices.

Discrete Hall resistivity contribution from Néel skyrmions in multilayer nanodiscs.

Magnetic skyrmions are knot-like quasiparticles. They are candidates for non-volatile data storage in which information is moved between fixed read and write terminals. The read-out operation of skyrmion-based spintronic devices will rely on the electrical detection of a single magnetic skyrmion within a nanostructure. Here we present Pt/Co/Ir nanodiscs that support skyrmions at room temperature. We measured the Hall resistivity and simultaneously imaged the spin texture using magnetic scanning transmission X-ray microscopy. The Hall resistivity is correlated to both the presence and size of the skyrmion. The size-dependent part matches the expected anomalous Hall signal when averaging the magnetization over the entire disc. We observed a resistivity contribution that only depends on the number and sign of skyrmion-like objects present in the disc. Each skyrmion gives rise to 22 ± 2 nΩ cm irrespective of its size. This contribution needs to be considered in all-electrical detection schemes applied to skyrmion-based devices. Not only the area of Néel skyrmions but also their number and sign contribute to their Hall resistivity.Not only the area of Néel skyrmions, but also their number and sign contribute to their Hall resistivity.