Sing W. Chin
National Semiconductor
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Featured researches published by Sing W. Chin.
IEEE Journal of Solid-state Circuits | 1996
Michael K. Mayes; Sing W. Chin
This paper describes the design and implementation of a fully monolithic 16-b, 1 Msample/s, low-power A/D converter (ADC). An on-chip 32-b custom microcontroller calibrates and corrects the pipeline linearity to within 0.75 LSB integral nonlinearity (INL) and 0.6 LSB differential nonlinearity (DNL). High speed and low power are achieved using a pipelined architecture. Errors resulting from capacitor mismatches, finite op-amp open loop gain, charge injection and comparator offset are removed through self-calibration. Coefficients determined during calibration are stored on chip, digitally correcting the pipeline ADC in real time during normal conversion, Full-scale errors are removed through self-calibration and an-chip multiplication. Linearity errors due to capacitor voltage coefficients are reduced using a curve fit algorithm and on-chip ROM. Digital cross-talk errors resulting from the microcontroller running at a rate of ten times the analog sampling rate have prevented implementations of fully monolithic converters of this performance class in the past. Mismatches in cross-talk due to different digital timing between calibration and correction lead to linearity errors at critical correction points. Experimental analysis and circuit techniques which overcome these problems are presented.
IEEE Journal of Solid-state Circuits | 1989
Michael K. Mayes; Sing W. Chin
A family of 8- and 10-b analog/digital converters (ADCs) has been designed using a more efficient architecture. The 10-b ADC requires two 4-b (two 3-b for the 8-b converter) half-flash cycles and a self-corrected voltage estimator. While the speed is similar to that of conventional half-flash ADCs, power consumption and die size are lower due to reduced numbers of comparators and resistors. The flash steps can be reduced by 1 b each, for an overall reduction in comparator count by a factor of 2. This architecture can be used to reduce the comparator and resistor count of any existing half-flash ADCs, ultimately decreasing die area and power consumption. For the same process and resolution, this architecture reduces die size and power consumption by 50%. >
IEEE Journal of Solid-state Circuits | 1996
Michael K. Mayes; Sing W. Chin; Lee L. Stoian
A 12-bit 1 Msample/s 25 mW analog-to-digital converter was designed. Linearity, offset, and gain errors of less than 1/2 LSB have been achieved using an EEPROM memory trimming scheme. The EEPROM memory array, programmed during testing, continuously drives a correction digital-to-analog converter (DAC) with code dependent correction factors. The analog-to-digital converter (ADC) uses a time-interleaved multistep architecture consisting of two banks of comparator arrays sharing a common reference ladder and EEPROM correction memory. A static EEPROM memory array optimizes the power dissipation, conversion rate, inter-stage gain errors, and charge injection. The resulting converter achieves high speed operation with minimal power dissipation.
Archive | 1994
Michael K. Mayes; Sing W. Chin
Archive | 1992
Michael K. Mayes; Sing W. Chin
Archive | 1992
Michael K. Mayes; Sing W. Chin
Archive | 1995
Michael K. Mayes; Sing W. Chin
Archive | 1994
Michael K. Mayes; Sing W. Chin
european solid state circuits conference | 1996
Michael K. Mayes; Sing W. Chin
Archive | 1996
Michael K. Mayes; Sing W. Chin