Siu Au Lee

Nanolithography with metastable neon atoms: Enhanced rate of contamination resist formation for nanostructure fabrication

We report a sevenfold improvement in the rate of contamination resist formation over previous experiments by using metastable neon atoms for nanolithography. Chemically assisted ion beam etching was used to transfer the resist pattern into the substrate. We demonstrate the fabrication of 50-nm-wide features in GaAs with well-defined edges and an aspect ratio >2:1. These are the best resolution and highest aspect ratio features that have been achieved with metastable atom lithography. The resist formation rate by the metastable neon atoms and the etch selectivity of the contamination resist with GaAs were measured.

Sub-Doppler laser cooling and magnetic trapping of erbium

We investigate cooling mechanisms in magneto-optically and magnetically trapped erbium. We find efficient sub-Doppler cooling in our trap, which can persist even in large magnetic fields due to the near degeneracy of two Lande g factors. Furthermore, a continuously loaded magnetic trap is demonstrated where we observe temperatures below 25 {mu}K. These favorable cooling and trapping properties suggest a number of scientific possibilities for rare-earth-metal atomic physics, including narrow linewidth laser cooling and spectroscopy, unique collision studies, and degenerate bosonic and fermionic gases with long-range magnetic dipole coupling.

Measurement of the hyperfine structure and isotope shifts of the 3 s 2 3 p 2 3 P 2 → 3 s 3 p 3 3 D 3 o transition in silicon

The hyperfine structure and isotope shifts of the

Measuring the Birefringence of the QED Vacuum

3{s}^{2}3{p}^{2} {}^{3}{P}_{2}\ensuremath{\rightarrow}3s3{p}^{3} {}^{3}{D}_{3}^{o}

A simple method for creating a large period optical standing wave for atom manipulation

transition in silicon have been measured. The transition at 221.7 nm was studied by-laser induced fluorescence in an atomic Si beam. For

A Laser‐cooled Single‐atom‐on‐demand Source For Si Quantum Computing

^{29}\mathrm{Si}

Measurement of the hyperfine structure and isotope shifts of the 3s23p2 3P2 → 3s3p3 3D03 transition in silicon

, the hyperfine

Light force manipulation of an atomic gallium beam

A

Optical manipulation of group III atoms

constant for the

Laser collimation of an atomic gallium beam

3{s}^{2}3{p}^{2} {}^{3}{P}_{2}