Slavo Kicin

Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid

A parallel arrangement of a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the cross-switch (XS) hybrid aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties due to the combination of both the bipolar Si IGBT and unipolar SiC MOSFET characteristics. For the purpose of demonstrating the XS hybrid, the parallel configuration is implemented experimentally in a single package for devices rated at 1200 V. Test results are obtained to validate this approach with respect to the static and dynamic performance when compared to a full Si IGBT and a full SiC MOSFET reference devices having the same power ratings as for the XS hybrid samples.

Low-Voltage AC Drive Based on Double-Sided Cooled IGBT Press-Pack Modules

We present a feasibility study of low-voltage drives based on double-sided cooled power modules. A novel press-pack module was developed, and an inverter was built up subsequently. The drive was benchmarked with a 400-kW ac industrial inverter. A significant increase in the current density and output power was achieved.

A new concept of a high-current power module allowing paralleling of many SiC devices assembled exploiting conventional packaging technologies

We present a new concept of a high-current SiC power module with the fast switching capability based on a stacked-ceramic-substrate structure. This approach enables to parallel many small area SiC devices in a housing of a Si half-bridge module. The internal design of the module - concept demonstrator was optimized using electromagnetic simulations in order to minimize stray inductance and balanced current sharing. The prototype was assembled exploiting conventional packaging technologies. Performance of the assembled module was tested by a double-pulse measurement test in order to determine switching losses and verify simulated stray inductance.

Full silicon carbide boost chopper module for high frequency and high temperature operation

This paper presents a 1200-V 20-A full silicon carbide boost chopper module designed for high temperature and high frequency operation. The developed module is based on one silicon carbide metal oxide semiconductor field effect transistor chip and two parallel connected silicon carbide schottky diode chips manufactured by Cree, Inc. The static and dynamic characteristics of the module have been experimentally determined and its performance tested in a 2-kW boost converter. The test results show that the developed module performs well and is able to provide a good conversion efficiency even at high switching frequency.

Robust 3.3kV silicon carbide MOSFETs with surge and short circuit capability

An approach to implement electrically robust MOSFETs in a functioning half-bridge will be investigated. For the first time, reverse conducting 3.3kV SiC MOSFETs have been fabricated with dilferent cell pitches from 14μm (p1.0) to 26μm (pl.8) that are able to withstand short circuit pulse of up to 10μs and a 9ms surge current event up to 15x the nominal current. LinPak half-bridge modules have been fabricated showing reduction of the switching loss by more than 90% compared to a silicon IGBT/diode half bridge.

Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

In this contribution, we report on the electrical characterization of point defects in 4H-SiC p+in diodes. Ten electrically active levels have been detected in the base region of the devices, by employing Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Of these ten levels, six are majority carrier traps, in the 0.1-1.7 eV energy range below the conduction band edge, and four were minority carrier traps located in the 0.13-0.4 eV energy range above the valence band edge. We found that, during DLTS measurements, both majority and minority carrier traps can be detected and we explain this by considering the behavior of the quasi-Fermi levels. At last, we studied the impact of proton irradiation on the minority charge carrier lifetime.

Performance evaluation of custom-made 1.2-kV 100-A silicon carbide half-bridge module in three-phase grid connected PWM rectifier

This paper studies experimentally the benefits of silicon carbide based power semiconductor technology in a low-voltage grid connected three-phase three-wire pulse width modulated rectifier. The power semiconductor module used in the study is a custom-made 1.2-kV 100-A fully silicon carbide based half-bridge type module designed for fast switching speeds and high temperature operation. The experimental tests are carried out with a 40-kVA prototype system built in the frame of a commercial low-voltage motor drive unit. In addition, the impact of the high switching speeds enabled by the silicon carbide based semiconductor devices on conductive electromagnetic emissions are also investigated. The results show that the conversion efficiency can be significantly improved with silicon carbide compared to the state-of-the-art silicon based semiconductor technology. As a drawback, the faster switching speeds increase the conductive electromagnetic emissions to some extent.

PCB Embedded Semiconductors for Low-Voltage Power Electronic Applications

Power conversion applications in the low voltage (LV) range (≤ 1.2 kV)—such as three-phase inverters—are required to operate at higher efficiencies, higher ambient temperatures, increasingly smaller form factor, and higher power density. Up to now, most research has focused on voltages up to 650 V for printed circuit board (PCB) embedded power electronics. This research evaluates a novel three-phase invertor module based on six insulated gate bipolar transistors and six diodes rated to 1.2 kV and 25 A each. This unique module is compared to the Semikron MiniSKiiP 23AC126V1. This paper considers some key details of the PCB embedding assembly process, a comparative switching performance assessment, measurement of thermal resistance, comparative lifetime, and electric insulation. First, a detailed outline of the package is presented including the top- and bottom-side metallization and the copper interconnect technology. The switching performances of both modules are compared for turn-ON and turn-OFF currents for a waveform at 600 V and 25 A at 150 °C. A finite-element-method thermal simulation demonstrates up to 44% lower thermal resistance for the PCB embedded package than that of the traditional wire-bonded direct bonded copper (DBC) package for an identical applied current and cooling condition. Furthermore, both packages are active power cycled to failure with the PCB embedded package demonstrating superior lifetime to the traditional DBC module. Finally, the maximum breakdown limit and the onset of partial discharge with the embedded PCB module are reported for both aged and non-aged conditions. The overall findings identify the promising application of PCB embedded power electronics for LV power conversion.