Solomon Mikael

Graphene-based carbon-layered electrode array technology for neural imaging and optogenetic applications

Neural micro-electrode arrays that are transparent over a broad wavelength spectrum from ultraviolet to infrared could allow for simultaneous electrophysiology and optical imaging, as well as optogenetic modulation of the underlying brain tissue. The long-term biocompatibility and reliability of neural micro-electrodes also require their mechanical flexibility and compliance with soft tissues. Here we present a graphene-based, carbon-layered electrode array (CLEAR) device, which can be implanted on the brain surface in rodents for high-resolution neurophysiological recording. We characterize optical transparency of the device at >90% transmission over the ultraviolet to infrared spectrum and demonstrate its utility through optical interface experiments that use this broad spectrum transparency. These include optogenetic activation of focal cortical areas directly beneath electrodes, in vivo imaging of the cortical vasculature via fluorescence microscopy and 3D optical coherence tomography. This study demonstrates an array of interfacing abilities of the CLEAR device and its utility for neural applications.

Fabrication and utility of a transparent graphene neural electrode array for electrophysiology, in vivo imaging, and optogenetics

Transparent graphene-based neural electrode arrays provide unique opportunities for simultaneous investigation of electrophysiology, various neural imaging modalities, and optogenetics. Graphene electrodes have previously demonstrated greater broad-wavelength transmittance (∼90%) than other transparent materials such as indium tin oxide (∼80%) and ultrathin metals (∼60%). This protocol describes how to fabricate and implant a graphene-based microelectrocorticography (μECoG) electrode array and subsequently use this alongside electrophysiology, fluorescence microscopy, optical coherence tomography (OCT), and optogenetics. Further applications, such as transparent penetrating electrode arrays, multi-electrode electroretinography, and electromyography, are also viable with this technology. The procedures described herein, from the material characterization methods to the optogenetic experiments, can be completed within 3–4 weeks by an experienced graduate student. These protocols should help to expand the boundaries of neurophysiological experimentation, enabling analytical methods that were previously unachievable using opaque metal–based electrode arrays.

Origami silicon optoelectronics for hemispherical electronic eye systems

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.Hemispherical format has been adopted in camera systems to better mimic human eyes, yet the current designs rely on complicated fabrications. Here, Zhang et al. show an origami-inspired approach that enables planar silicon-based photodetector arrays to reshape into concave or convex geometries.

Creating periodic local strain in monolayer graphene with nanopillars patterned by self-assembled block copolymer

A simple and viable method was developed to produce biaxial strain in monolayer graphene on an array of SiO2 nanopillars. The array of SiO2 nanopillars (1 cm2 in area, 80 nm in height, and 40 nm in pitch) was fabricated by employing self-assembled block copolymer through simple dry etching and deposition processes. According to high resolution micro-Raman spectroscopy and atomic force microscopy analyses, 0.9% of maximum biaxial tensile strain and 0.17% of averaged biaxial tensile strain in graphene were created. This technique provides a simple and viable method to form biaxial tensile strain in graphene and offers a practical platform for future studies in graphene strain engineering.

Heterogeneously Integrated InGaAs and Si Membrane Four-Color Photodetector Arrays

We report the design and fabrication of heterogeneously integrated silicon and InGaAs membrane photodetector arrays. Visible and near-infrared (NIR) detection can be achieved by transfer printing a silicon membrane on InGaAs substrate. Based on the penetration-depth-dependent absorption of different wavelengths, filter-free visible color detection can be obtained via three-junction photocurrent measurement for silicon, and NIR can be detected by InGaAs. The measurements show good agreement with the optical behavior predicted by the design and simulation.

High-density platinum nanoparticle-decorated titanium dioxide nanofiber networks for efficient capillary photocatalytic hydrogen generation

Aldehyde-functionalized cellulose nanofibers (CNFs) were applied to synthesize Pt nanoparticles (NPs) on CNF surfaces via on-site Pt ion reduction and achieve high concentration and uniform Pt NP loading. ALD could then selectively deposit TiO2 on CNFs and keep the Pt NPs uncovered due to their drastically different hydro-affinity properties. The high-temperature ALD process also simultaneously improved the crystallinity of Pt NPs and decomposed the CNF template leaving a pure anatase phase TiO2 nanofiber network decorated with high-density Pt NPs (up to 11.05 wt%). The as-prepared fibrous Pt–TiO2 network photocatalyst was integrated with CNF strips to develop a capillary setup for photocatalyzed hydrogen generation. Better reaction kinetics and higher efficiency were achieved from the capillary design compared to conventional in-electrolyte reactions. The initial H2 generation rates were 100.56–138.69 mmol g−1 h−1 from the capillary setup based on different Pt NP loadings, which were 123.3–288.6% larger than those of the in-electrolyte setup (25.88–62.11 mmol g−1 h−1). This 3D nanofibrous Pt–TiO2 capillary photocatalyst offers a brand new solution for improving the throughput of photocatalytic hydrogen production.

Thermal diffusion boron doping of single-crystal natural diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al2O3

A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al2O3) gate dielectric is demonstrated. Wetting properties of ALD Al2O3 under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al2O3. To achieve hydrophobic surface of ALD Al2O3, a methyl group (CH3)-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an Ion/Ioff ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at VD = 0.1 V, and 249.5 cm2/V·s, respectively.

High power fast flexible electronics: Transparent RF AlGaN/GaN HEMTs on plastic substrates

Heat dissipation is a major challenge for practical applications of fast flexible electronics, particularly using wide band gap semiconductors, due to the high power needed to achieve high frequency operation. Using an intrinsic GaN buffer layer as a heat conductive conductor, transparent, flexible RF GaN HEMTs with a device area of 400 × 350 um2 on plastic substrates (PET) are demonstrated with high thermal dissipation of 0.5 W. The device exhibits an fMAX of 115 GHz with no severe degradation of device performance compared with that made on a Si substrate. Low temperature plastic substrates also exhibited no thermal damage/melting. Our approach demonstrated that flexible single crystal material such as intrinsic GaN is a contender for thermal management of medium power RF flexible devices.

Wrinkled bilayer graphene with wafer scale mechanical strain

Wafer-scale strained bilayer graphene is demonstrated by employing a silicon nitride (Si3N4) stressor layer. Different magnitudes of compressive stress up to 840 MPa were engineered by adjusting the Si3N4 deposition recipes, and different strain conditions were analyzed using Raman spectroscopy. The strained graphene displayed significant G peak shifts and G peak splitting with 16.2 cm−1 and 23.0 cm−1 of the G band and two-dimensional band shift, which corresponds to 0.26% of strain. Raman mapping of large regions of the graphene films found that the largest shifts/splitting occurred near the bilayer regions of the graphene films. The significance of our approach lies in the fact that it can be performed in a conventional microfabrication process, i.e., the plasma enhanced chemical vapor deposition system, and thus easily implemented for large scale production.