Son Tung Ha

Room-Temperature Near-Infrared High-Q Perovskite Whispering-Gallery Planar Nanolasers

Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true integration of optoelectronic circuitry. Although significant progress has been made in III-V nanowire lasers with achieving NIR lasing at room temperature, challenges remain including low quantum efficiencies and high Auger losses. Importantly, the obstacles toward integrating one-dimensional nanowires on the planar ubiquitous Si platform need to be effectively tackled. Here we demonstrate a new family of planar room-temperature NIR nanolasers based on organic-inorganic perovskite CH3NH3PbI(3-a)X(a) (X = I, Br, Cl) nanoplatelets. Their large exciton binding energies, long diffusion lengths, and naturally formed high-quality planar whispering-gallery mode cavities ensure adequate gain and efficient optical feedback for low-threshold optically pumped in-plane lasing. We show that these remarkable wavelength tunable whispering-gallery nanolasers can be easily integrated onto conductive platforms (Si, Au, indium tin oxide, and so forth). Our findings open up a new class of wavelength tunable planar nanomaterials potentially suitable for on-chip integration.

Vapor Phase Synthesis of Organometal Halide Perovskite Nanowires for Tunable Room-Temperature Nanolasers

Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.

Laser cooling of organic–inorganic lead halide perovskites

The invention relates generally to cooling matter using laser emission, and in particular, to cooling perovskite materials using laser emission.

Whispering gallery mode lasing from hexagonal shaped layered lead iodide crystals

We report on the synthesis and optical gain properties of regularly shaped lead iodide (PbI2) platelets with thickness ranging from 10-500 nm synthesized by chemical vapor deposition methods. The as-prepared single crystalline platelets exhibit a near band edge emission of ∼ 500 nm. Whispering gallery mode (WGM) lasing from individual hexagonal shaped PbI2 platelets is demonstrated in the temperature-range of 77-210 K, where the lasing modes are supported by platelets as thin as 45 nm. The finite-difference time-domain simulation and the edge-length dependent threshold confirm the planar WGM lasing mechanism in such hexagonal shaped PbI2 platelet. Through a comprehensive study of power-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we ascribe the WGM lasing to be biexcitonic in nature. Moreover, for different thicknesses of platelet, the lowest lasing threshold occurs in platelets of ∼ 120 nm, which attributes to the formation of a good Fabry-Pérot resonance cavity in the vertical direction between the top and bottom platelet surfaces that enhances the reflection. Our present study demonstrates the feasibility of planar light sources based on layered semiconductor materials and that their thickness-dependent threshold characteristic is beneficial for the optimization of layered material based optoelectronic devices.

Photonics and Optoelectronics of 2D Metal‐Halide Perovskites

In the growing list of 2D semiconductors as potential successors to silicon in future devices, metal-halide perovskites have recently joined the family. Unlike other conversional 2D covalent semiconductors such as graphene, transition metal dichalcogenides, black phosphorus, etc., 2D perovskites are ionic materials, affording many distinct properties of their own, including high photoluminescence quantum efficiency, balanced large exciton binding energy and oscillator strength, and long carrier diffusion length. These unique properties make 2D perovskites potential candidates for optoelectronic and photonic devices such as solar cells, light-emitting diodes, photodetectors, nanolasers, waveguides, modulators, and so on, which represent a relatively new but exciting and rapidly expanding area of research. In this Review, the recent advances in emerging 2D metal-halide perovskites and their applications in the fields of optoelectronics and photonics are summarized and insights into the future direction of these fields are offered.

Directional lasing in resonant semiconductor nanoantenna arrays

High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.Active dielectric nanoantenna arrays exhibit low-threshold and high-quality-factor directional lasing achieved via a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars.Directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays is demonstrated. This is achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum (BIC) generated by the collective, vertical electric dipole resonances excited in the nanopillars for sub-diffractive arrays. By opening an unprotected, diffractive channel along one of the periods of the array one can control the directionality of the emitted light without sacrificing the high Q associated with the BIC mode, thus achieving directional lasing. A quality factor Q = 2750 is achieved at a controlled angle of emission of ~ 3° with respect to the normal of the array with a pumping fluence as low as 10 μJ/cm2. We demonstrate the possibility to control