Song Sannian

THE STUDY OF THE MICROSTRUCTURE AND TUNABILITY OF Ba(SnxTi1-x)O3 THIN FILMS

ABSTRACT Barium tin titanate Ba(SnxTi1−x)O3 (BTS, x = 0.05,0.1,0.15,0.2,0.25) thin films have been prepared by sol-gel technique on Pt/Ti/SiO2/Si substrates. The influences of Sn content on the evolution of the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The result shows that the Sn content strongly influences the microstructure and the dielectric properties of the films. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.

新型相变材料Ti 0.5 Sb 2 Te 3 刻蚀工艺及其机理研究

采用CF 4 和Ar混合气体研究了新型相变材料Ti 0.5 Sb 2 Te 3 (TST)的刻蚀特性, 重点优化和研究了刻蚀气体总流速、CF 4 /Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明, 当气体总流量为50 sccm、CF 4 浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时, 刻蚀速度达到126 nm/min, TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。采用CF 4 和Ar混合气体研究了新型相变材料Ti 0.5 Sb 2 Te 3 (TST)的刻蚀特性, 重点优化和研究了刻蚀气体总流速、CF 4 /Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明, 当气体总流量为50 sccm、CF 4 浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时, 刻蚀速度达到126 nm/min, TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。