Soo-Whan Kim

Electronic properties of GdxBi2−xSe3 single crystals analyzed by Shubnikov-de Haas oscillations

Magnetically doped topological insulators have been significantly researched for unlocking the nontrivial topological phases and the resultant potential applications for spintronics. We report the effect of antiferromagnetic order induced by Gd substitution on the electronic properties of GdxBi2−xSe3 single crystals by analyzing the Shubnikov-de Haas oscillations. Antiferromagnetic order of Gd ions affects the 2D surface state in Bi2Se3 and changes the effective mass and lifetime of charge carriers. These observations suggest a strong correlation of 2D surface electrons with the antiferromagnetic ordering, where the itinerant electrons are bound to the Gd ions to mediate the antiferromagnetic interaction.Magnetically doped topological insulators have been significantly researched for unlocking the nontrivial topological phases and the resultant potential applications for spintronics. We report the effect of antiferromagnetic order induced by Gd substitution on the electronic properties of GdxBi2−xSe3 single crystals by analyzing the Shubnikov-de Haas oscillations. Antiferromagnetic order of Gd ions affects the 2D surface state in Bi2Se3 and changes the effective mass and lifetime of charge carriers. These observations suggest a strong correlation of 2D surface electrons with the antiferromagnetic ordering, where the itinerant electrons are bound to the Gd ions to mediate the antiferromagnetic interaction.

Gd doping effect in p-type Bi2Te3 single crystals

It is generally accepted that Bi2Te3 prepared from stoichiometric melts has p-type charge carriers generated from BiTe-type antisite defects, while Bi2Te3 grown under Te-rich condition becomes n-type due to another type of TeBi antisite defects. We report the magnetic and transport properties of GdxBi2-xTe3 prepared from stoichiometric melts, where p-type charge carriers are dominant. The physical properties of all the samples have no significant changes with varying the nominal Gd composition up to x = 0.2. Compared with n-type GdxBi2-xTe3 samples grown under Te-rich condition, we find low solubility for all the samples and no clear signature of antiferromagnetic order. These results suggest that the Gd doping rate in GdxBi2-xTe3 is governed by the type of antisite defects and charge carriers, so that the antiferromagnetic ordering is not eventually introduced.It is generally accepted that Bi2Te3 prepared from stoichiometric melts has p-type charge carriers generated from BiTe-type antisite defects, while Bi2Te3 grown under Te-rich condition becomes n-type due to another type of TeBi antisite defects. We report the magnetic and transport properties of GdxBi2-xTe3 prepared from stoichiometric melts, where p-type charge carriers are dominant. The physical properties of all the samples have no significant changes with varying the nominal Gd composition up to x = 0.2. Compared with n-type GdxBi2-xTe3 samples grown under Te-rich condition, we find low solubility for all the samples and no clear signature of antiferromagnetic order. These results suggest that the Gd doping rate in GdxBi2-xTe3 is governed by the type of antisite defects and charge carriers, so that the antiferromagnetic ordering is not eventually introduced.

The effect of substitution of Mn for Ni on the magnetic and transport properties of CeNi0.8-xMnxBi2

We report the results of Mn substitution for Ni in CeNi0.8Bi2, (i.e. CeNi0.8-xMnxBi2). All the samples have an antiferromagnetic ordered state below TN = 5.0 K due to localized 4f-magnetic moment on the Ce ions. Besides this antiferromagnetic ordering caused by Ce, the magnetic and transport properties are abruptly changed with increasing Mn contents at the boundary composition of x = 0.4. The magnetic state is changed into a ferromagnetic state around 200 K for x > 0.4, where the electrical resistivity is strongly suppressed to become simple metallic. These results of ferromagnetism and metallicity can be explained by the double-exchange mechanism. The mixed valence states of Ni and Mn ions are confirmed by X-ray photoelectron spectroscopy (XPS). For x 0.4, the Ni2+ state is substituted for the Mn2+ state, which gradually changes to the final Mn3+ state. We also present an inelastic neutron scattering (INS) measurements on CeNi0.8Bi2 (i.e. x=0) between 1.2 and 12 K. The high energy INS study reveals the presence of two well defined crystal electric field (CEF) excitations near 9 meV and 19 meV at 1.2 K and 6 K, while the low energy INS study reveals the presence of quasi-elastic scattering above 4 K. We will discuss our INS results of CeNi0.8Bi2 based on the crystal electric field model.

Substitution effect on the magnetic and transport properties of CeNi0.8−xMnxBi2

We report the results of Mn substitution for Ni in CeNi0.8Bi2, (i.e. CeNi0.8-xMnxBi2). All the samples have an antiferromagnetic ordered state below TN = 5.0 K due to localized 4f-magnetic moment on the Ce ions. Besides this antiferromagnetic ordering caused by Ce, the magnetic and transport properties are abruptly changed with increasing Mn contents at the boundary composition of x = 0.4. The magnetic state is changed into a ferromagnetic state around 200 K for x > 0.4, where the electrical resistivity is strongly suppressed to become simple metallic. These results of ferromagnetism and metallicity can be explained by the double-exchange mechanism. The mixed valence states of Ni and Mn ions are confirmed by X-ray photoelectron spectroscopy (XPS). For x 0.4, the Ni2+ state is substituted for the Mn2+ state, which gradually changes to the final Mn3+ state. We also present an inelastic neutron scattering (INS) measurements on CeNi0.8Bi2 (i.e. x=0) between 1.2 and 12 K. The high energy INS study reveals the presence of two well defined crystal electric field (CEF) excitations near 9 meV and 19 meV at 1.2 K and 6 K, while the low energy INS study reveals the presence of quasi-elastic scattering above 4 K. We will discuss our INS results of CeNi0.8Bi2 based on the crystal electric field model.

Substitution effect on the magnetic and transport properties of CeNi{sub 0.8−x}Mn{sub x}Bi{sub 2}

We report the results of Mn substitution for Ni in CeNi0.8Bi2, (i.e. CeNi0.8-xMnxBi2). All the samples have an antiferromagnetic ordered state below TN = 5.0 K due to localized 4f-magnetic moment on the Ce ions. Besides this antiferromagnetic ordering caused by Ce, the magnetic and transport properties are abruptly changed with increasing Mn contents at the boundary composition of x = 0.4. The magnetic state is changed into a ferromagnetic state around 200 K for x > 0.4, where the electrical resistivity is strongly suppressed to become simple metallic. These results of ferromagnetism and metallicity can be explained by the double-exchange mechanism. The mixed valence states of Ni and Mn ions are confirmed by X-ray photoelectron spectroscopy (XPS). For x 0.4, the Ni2+ state is substituted for the Mn2+ state, which gradually changes to the final Mn3+ state. We also present an inelastic neutron scattering (INS) measurements on CeNi0.8Bi2 (i.e. x=0) between 1.2 and 12 K. The high energy INS study reveals the presence of two well defined crystal electric field (CEF) excitations near 9 meV and 19 meV at 1.2 K and 6 K, while the low energy INS study reveals the presence of quasi-elastic scattering above 4 K. We will discuss our INS results of CeNi0.8Bi2 based on the crystal electric field model.