Soong Ju Oh

Bandlike Transport in Strongly Coupled and Doped Quantum Dot Solids: A Route to High-Performance Thin-Film Electronics

We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm(2)/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands. Temperature-dependent measurements show bandlike transport to 220 K on a SiO(2) gate insulator that is extended to 140 K by reducing the interface trap density using an Al(2)O(3)/SiO(2) gate insulator. The use of compact ligands and doping provides a pathway to high performance, solution-deposited QD electronics and optoelectronics.

Thiocyanate-Capped Nanocrystal Colloids: Vibrational Reporter of Surface Chemistry and Solution-Based Route to Enhanced Coupling in Nanocrystal Solids

Ammonium thiocyanate (NH(4)SCN) is introduced to exchange the long, insulating ligands used in colloidal nanocrystal (NC) synthesis. The short, air-stable, environmentally benign thiocyanate ligand electrostatically stabilizes a variety of semiconductor and metallic NCs in polar solvents, allowing solution-based deposition of NCs into thin-film NC solids. NH(4)SCN is also effective in replacing ligands on NCs after their assembly into the solid state. The spectroscopic properties of this ligand provide unprecedented insight into the chemical and electronic nature of the surface of the NCs. Spectra indicate that the thiocyanate binds to metal sites on the NC surface and is sensitive to atom type and NC surface charge. The short, thiocyanate ligand gives rise to significantly enhanced electronic coupling between NCs as evidenced by large bathochromic shifts in the absorption spectra of CdSe and CdTe NC thin films and by conductivities as high as (2 ± 0.7) × 10(3) Ω(-1) cm(-1) for Au NC thin films deposited from solution. NH(4)SCN treatment of PbTe NC films increases the conductivity by 10(13), allowing the first Hall measurements of nonsintered NC solids, with Hall effect mobilities of 2.8 ± 0.7 cm(2)/(V·s). Thiocyanate-capped CdSe NC thin films form photodetectors exhibiting sensitive photoconductivity of 10(-5) Ω(-1) cm(-1) under 30 mW/cm(2) of 488 nm illumination with I(photo)/I(dark) > 10(3) and form n-channel thin-film transistors with electron mobilities of 1.5 ± 0.7 cm(2)/(V·s), a current modulation of >10(6), and a subthreshold swing of 0.73 V/decade.

Soft, stretchable, fully implantable miniaturized optoelectronic systems for wireless optogenetics

Optogenetics allows rapid, temporally specific control of neuronal activity by targeted expression and activation of light-sensitive proteins. Implementation typically requires remote light sources and fiber-optic delivery schemes that impose considerable physical constraints on natural behaviors. In this report we bypass these limitations using technologies that combine thin, mechanically soft neural interfaces with fully implantable, stretchable wireless radio power and control systems. The resulting devices achieve optogenetic modulation of the spinal cord and peripheral nervous system. This is demonstrated with two form factors; stretchable film appliqués that interface directly with peripheral nerves, and flexible filaments that insert into the narrow confines of the spinal epidural space. These soft, thin devices are minimally invasive, and histological tests suggest they can be used in chronic studies. We demonstrate the power of this technology by modulating peripheral and spinal pain circuitry, providing evidence for the potential widespread use of these devices in research and future clinical applications of optogenetics outside the brain.

Metal-Enhanced Upconversion Luminescence Tunable through Metal Nanoparticle–Nanophosphor Separation

We have demonstrated amplification of luminescence in upconversion nanophosphors (UCNPs) of hexagonal phase NaYF(4) (β-NaYF(4)) doped with the lanthanide dopants Yb(3+), Er(3+) or Yb(3+), Tm(3+) by close proximity to metal nanoparticles (NPs). We present a configuration in which close-packed monolayers of UCNPs are separated from a dense multilayer of metal NPs (Au or Ag) by a nanometer-scale oxide grown by atomic layer deposition. Luminescence enhancements were found to be dependent on the thickness of the oxide spacer layer and the type of metal NP with enhancements of up to 5.2-fold proximal to Au NPs and of up to 45-fold proximal to Ag NPs. Concomitant shortening of the UCNP luminescence decay time and rise time is indicative of the enhancement of the UCNP luminescence induced by resonant plasmonic coupling and nonresonant near-field enhancement from the metal NP layer, respectively.

Stoichiometric Control of Lead Chalcogenide Nanocrystal Solids to Enhance Their Electronic and Optoelectronic Device Performance

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition.

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm(2)/(V s).

Exploiting the colloidal nanocrystal library to construct electronic devices

Assembling nanocrystal devices A wide range of materials can be grown as high-quality colloidal nanocrystals, with properties spanning from conductors to semiconductors and insulators. Although these materials have been included in electronic devices, they usually only form a single component within the device. Choi et al. took a variety of solution-processable colloidal nanocrystals to form all of the device components. Through the development of the right materials, interfaces, and processing steps, they constructed an all-colloid field effect transistor. Science, this issue p. 205 Semiconductor devices are constructed solely from a range of colloidal nanocrystals. Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high–dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.

Plasmon-Enhanced Upconversion Luminescence in Single Nanophosphor–Nanorod Heterodimers Formed through Template-Assisted Self-Assembly

We demonstrate plasmonic enhancement of upconversion luminescence in individual nanocrystal heterodimers formed by template-assisted self-assembly. Lithographically defined, shape-selective templates were used to deterministically coassemble single Au nanorods in proximity to single hexagonal (β-phase) NaYF4:Yb(3+),Er(3+) upconversion nanophosphors. By tailoring the dimensions of the rods to spectrally tune their longitudinal surface plasmon resonance to match the 977 nm excitation wavelength of the phosphors and by spatially localizing the phosphors in the intense near-fields surrounding the rod tips, several-fold luminescence enhancements were achieved. The enhancement effects exhibited a strong dependence on the excitation lights polarization relative to the rod axis. In addition, greater enhancement was observed at lower excitation power densities due to the nonlinear behavior of the upconversion process. The template-based coassembly scheme utilized here for plasmonic coupling offers a versatile platform for improving our understanding of optical interactions among individual chemically prepared nanocrystal components.

Multiscale Periodic Assembly of Striped Nanocrystal Superlattice Films on a Liquid Surface

Self-assembly of nanocrystals (NCs) into periodically ordered structures on multiple length scales and over large areas is crucial to the manufacture of NC-based devices. Here, we report an unusual yet universal approach to rapidly assembling hierarchically organized NC films that display highly periodic, tunable microscale stripe patterns over square centimeter areas while preserving the local superlattice structure. Our approach is based on a drying-driven dynamic assembly process occurring on a liquid surface with the stripe pattern formed by a new type of contact-line instability. Periodic ordering of NCs is realized on microscopic and nanoscopic scales simultaneously without the need of any specialized equipment or the application of external fields. The striped NC superlattice films obtained can be readily transferred to arbitrary substrates for device fabrication. The periodic structure imparts interesting modulation and anisotropy to the properties of such striped NC assemblies. This assembly approach is applicable to NCs with a variety of compositions, sizes, and shapes, offering a robust, inexpensive route for large-scale periodic patterning of NCs.

Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits.

We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.