Sourav Maiti

Doping location-dependent energy transfer dynamics in Mn-doped CdS/ZnS nanocrystals.

Dynamics of energy transfer and charge carrier localization in Mn-doped CdS/ZnS core/shell nanocrystals correlated with doping location and concentration are studied via transient absorption measurement of exciton relaxation dynamics. The strong dependence of exciton-Mn energy transfer rate on doping location was directly resolved in the transient bleach recovery and electron intraband absorption data by using layer-by-layer synthesized Mn-doped nanocrystals. With 1.2 nm decrease in doping radius in the ZnS shell, energy transfer rate increases by 6 fold. We identified that hole trapping is the major competing process that inhibits the energy transfer in Mn-doped CdS/ZnS nanocrystals. From the branching ratio of the energy transfer and hole trapping, combined with luminescence quantum yield measurement, we also obtained doping location-dependent radiative relaxation quantum yield of Mn(2+) ions that is as high as 0.95.

Electron Trap to Electron Storage Center in Specially Aligned Mn-Doped CdSe d-Dot: A Step Forward in the Design of Higher Efficient Quantum-Dot Solar Cell

Specially aligned surface-accumulated Mn-doped CdSe (MnCdSe) quantum dots (QDs) have been synthesized to study the effect of dopant atom on charge-carrier dynamics in QD materials. EPR studies suggest that the (4)T1 state of Mn(2+) lies above the conduction band of CdSe, and as a result no Mn-luminescence was observed from MnCdSe. Femtosecond transient absorption studies suggest that Mn atom introduces structural defects in surface-doped CdSe, which acts as electron trap center in doped QD for the photoexcited electron. Bromo-pyrogallol red (Br-PGR) were found to form strong charge-trasfer complex with both CdSe and MnCdSe QDs. Charge separation in both the CdSe/Br-PGR and MnCdSe/Br-PGR composites was found to take place in three different pathways by transferring the photoexcited hole of CdSe/MnCdSe QDs to Br-PGR, electron injection from photoexcited Br-PGR to the QDs, and direct electron transfer from the HOMO of Br-PGR to the conduction band of both the QDs. Hole-transfer dynamics are found to be quite similar (∼1.1 to 1.3 ps) for both of the systems and found to be independent of Mn doping. However, charge recombination dynamics was found to be much slower in the MnCdSe/Br-PGR system as compared with that in the CdSe/Br-PGR system, which confirms that the Mn dopant act as the electron storage center. As a consequence, the MnCdSe/Br-PGR system can be used as a better super sensitizer in quantum-dot-sensitized solar cell to increase efficiency further.

Unusually Slow Electron Cooling to Charge-Transfer State in Gradient CdTeSe Alloy Nanocrystals Mediated through Mn Atom.

We have synthesized Mn-doped CdTeSe gradient alloy nanocrystals (NCs) by a colloidal synthetic method, and charge carrier dynamics have been revealed through ultrafast transient absorption (TA) spectroscopy. Due to the reactivity difference between Te and Se, a CdTe-rich core and CdSe-rich shell have been formed in the CdTeSe alloy with the formation of a gradient type II core-shell structure. Electron paramagnetic resonance studies suggest Mn atoms are located in the surface of the alloy NCs. Steady-state optical absorption and emission studies suggest formation of a charge-transfer (CT) state in which electrons are localized in a CdSe-rich shell and holes are localized in a CdTe-rich core which appears in the red region of the spectra. Electron transfer in the CT state is found to take place in the Marcus inverted region. To understand charge-transfer dynamics in the CdTeSe alloy NCs and to determine the effect of Mn doping on the alloy, ultrafast transient absorption studies have been carried out. In the case of the undoped alloy, formation of the CT state is found to take place through electron relaxation to the conduction band of the CT state with a time of 600 fs and through hole relaxation (from the CdSe-rich state to the CdTe-rich state) to the valence band of the CT state with a time scale of 1 ps. However, electron relaxation in the presence of Mn dopants takes place initially via an electron transfer to the Mn 3d state (d(5)) followed by transfer from the Mn 3d state (d(6)) to the CT state, which has been found to take place with a >700 ps time scale in addition to the hole relaxation time of 2 ps. Charge recombination time of the CT state is found to be extremely slow in the Mn-doped CdTeSe alloy NCs as compared to the undoped one, where the Mn atom acts as an electron storage center.

Subpicosecond Exciton Dynamics and Biexcitonic Feature in Colloidal CuInS2 Nanocrystals: Role of In–Cu Antisite Defects

Charge carrier dynamics of multinary quantum dots like CuInS2 (CIS) nanocrystals (NCs) is not clearly understood, especially in ultrafast time scales. Herein we have synthesized colloidal CIS NCs that show defect-induced emission between donor (antisite) and acceptor (internal/surface) states as indicated from steady-state and time-resolved photoluminescence (PL) measurements. Subpicosecond transient absorption (TA) spectra of CIS NCs reveal a gradient of electronic states that exists above the conduction band edge. The electron cooling rate has been determined to be ∼0.1-0.15 eV/ps. The cascade of electron cooling dynamics was monitored after following the TA kinetics at different electronic states. Interestingly, the kinetics at the antisite state unveil a biexcitonic feature, which has been enlightened through a probe-induced biexciton mechanism. With progressively higher fluence (⟨N⟩), the biexciton binding energy increases, and the electron cooling to the antisite state considerably slows down. Extra energy released during Auger recombination of bi/multiexcitons are used to re-excite the electron to a further high energy level, resulting in longer electron cooling time to the antisite states.

Light Harvesting and Photocurrent Generation in a Conjugated Polymer Nanoparticle‐Reduced Graphene Oxide Composite

Polymer-graphene nanocomposites are promising candidates for light harvesting applications such as photocatalysis and photovoltaics, where significant charge separation occurs due to photoinduced electron transfer. Much attention has been paid to using reduced graphene oxide (r-GO) as template for anchoring various nanomaterials due to its efficient electron accepting and transport properties. Here, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) nanoparticles are prepared from MEH-PPV polymer and the change in photophysical properties upon formation of polymer nanoparticles (PNPs) from the molecular state are investigated by using steady-state and time-resolved spectroscopy. Nanocomposites are constructed by adding hexadecylamine-functionalized positively charged MEH-PPV PNPs to a solution of negatively charged r-GO. Steady-state and time-resolved spectroscopy are also used to study the electronic interactions between PNPs and r-GO. Ultrafast femtosecond up-conversion and transient absorption spectroscopy unequivocally confirms the electron transfer process from the excited state of MEH-PPV PNPs to r-GO at the interface of the nanocomposite. Analysis reveals that the charge separation time is found to be pulse-width-limited (<100 fs). Due to charge separation in these nanocomposites, an increase (2.6 fold) of photocurrent under visible light illumination is obtained. The fundamental understanding of the charge transfer dynamics affords new opportunities to design efficient light-harvesting systems based on inorganic-organic hybrids.

An Insight into the Interface through Excited-State Carrier Dynamics for Promising Enhancement of Power Conversion Efficiency in a Mn-Doped CdZnSSe Gradient Alloy

To explore the significance of impurity doping in power conversion efficiency, quaternary gradient CdZnSSe alloy nanocrystals (NCs) and its Mn-doped analogues were synthesized by high-temperature pyrolysis. The undoped and Mn-doped CdZnSSe alloy NCs have been characterized by employing high-resolution TEM, X-ray diffraction, energy-dispersive X-ray spectroscopy, and electron paramagnetic resonance spectroscopy measurements. A low-temperature injection of chalcogens led to a gradient interface in the alloy, comprised of a CdSe/CdS/ZnSe/ZnS nanostructure. Both steady-state and ultrafast time-resolved absorption studies suggested the formation of a charge-transfer (CT) state due to the inner quasi-type II CdSe/CdS part of the gradient CdZnSSe alloy NCs, in which electrons are delocalized throughout the conduction band (CB) of both CdSe and CdS. The CT-state bleach recovery kinetics gave an additional slow electron cooling component (8 ps) in the undoped alloy NCs, which has been assigned to electron equilibration in the delocalized CB before recombination (or trapping). Interestingly, in the presence of dopant Mn, the slow electron cooling component became even more sluggish at 10 ps due to Mn-mediated electron cooling, in which Mn acts as an electron storage center. An unprecedented increase in the photocurrent conversion efficiency (PCE) of approximately 30 % from (3.3±0.11) to (4.29±0.07) % was observed in the Mn-doped gradient alloy compared with the undoped alloy.

Tuning Hole and Electron Transfer from Photoexcited CdSe Quantum Dots to Phenol Derivatives: Effect of Electron-Donating and -Withdrawing Moieties

Charge-transfer processes from photoexcited CdSe quantum dots (QDs) to phenol derivatives with electron- donating (4-methoxy) and -withdrawing (4-nitro) moieties have been demonstrated by using steady-state and time- resolved emission and femtosecond transient absorption spectroscopy. Steady-state and time-resolved emission studies suggest that in the presence of both 4-nitrophenol (4NP) and 4-methoxyphenol (4MP) CdSe QDs luminescence is quenched. Stern-Volmer analysis suggests both static and dynamic mechanisms are active for both the QD/phenol composites. Cyclic voltammetric analysis recommends that photoexcited CdSe QDs can donate electrons to 4NP and holes to 4MP. To reconfirm both electron- and hole-transfer mechanisms, CdSe/CdS quasi-type II and CdSe/CdTe type II core-shell nanocrystals were synthesized and photoluminescence quenching was monitored in the absence and presence of both 4NP and 4MP, for which hole and electron transfer were systematically restricted. Results suggest that indeed electron and hole transfer take place from photoexcited CdSe to 4NP and 4MP, respectively. To monitor the charge-transfer dynamics in both systems on an early timescale, femtosecond transient absorption spectroscopic techniques have been employed. Electron and hole transfer and charge-recombination dynamics are discussed and the effect of electron-donating and -withdrawing groups has been demonstrated.

Boosting the Efficiency of Quantum Dot-Sensitized Solar Cells through Formation of the Cation-Exchanged Hole Transporting Layer

In search of a viable way to enhance the power conversion efficiency (PCE) of quantum dot-sensitized solar cells, we have designed a method by introducing a hole transporting layer (HTL) of p-type CuS through partial cation exchange process in a postsynthetic ligand-assisted assembly of nanocrystals (NCs). High-quality CdSe and CdSSe gradient alloy NCs were synthesized through colloidal method, and the charge carrier dynamics was monitored through ultrafast transient absorption measurements. A notable increase in the short-circuit current concomitant with the increase in open-circuit voltage and the fill factor led to 45% increment in PCE for CdSe-based solar cells upon formation of the CuS HTL. Electrochemical impedance spectroscopy further revealed that the CuS layer formation increases recombination resistance at the TiO2/NC/electrolyte interface, implying that interfacial recombination gets drastically reduced because of smooth hole transfer to the redox electrolyte. Utilizing the same approach for CdSSe alloy NCs, the highest PCE (4.03%) was obtained upon CuS layer formation compared to 3.26% PCE for the untreated one and 3.61% PCE with the conventional ZnS coating. Therefore, such strategies will help to overcome the kinetic barriers of hole transfer to electrolytes, which is one of the major obstacles of high-performance devices.

Correlating Charge Carrier Dynamics with Efficiency in Quantum Dot Solar Cells: Can Excitonics Lead to Highly Efficient Devices?

The photovoltaic performance of quantum-dot solar cells strongly depends on the charge-carrier relaxation and recombination processes, which need to be modulated in a favorable way to obtain maximum efficiency. Recently, significant efforts have been devoted to investigate the carrier dynamics of nanocrystal sensitizers, both in solution and deposited on TiO2 photoanodes, with the aim to correlate the excitonics with solar-energy conversion efficiency. This Minireview summarizes some proof of the concepts that efficiency can be directly correlated to the exciton dynamics of quantum-dot solar cells. The presented findings are based on CdSeS alloy, CdSe/CdS core/shell, Au/CdSe nanohybrids, and Mn-doped CdZnSSe nanocrystals, where the favourable excitonic processes are optimized to enhance the efficiency. Future prospects and limitations are addressed as well.

Direct Correlation of Excitonics with Efficiency in a Core-Shell Quantum Dot Solar Cell

Shell thickness dependent band-gap engineering of quasi type II core-shell material with higher carrier cooling time, lower interfacial defect states, and longer charge carrier recombination time can be a promising candidate for both photocatalysis and solar cell. In the present investigation, colloidal CdSe@CdS core-shells with different shell thickness (2, 4 and 6 monolayer CdS) were synthesized through hot injection method and have been characterized by high resolution transmission electron microscope (HRTEM) followed by steady state absorption and luminescence techniques. Ultrafast transient absorption (TA) studies suggest longer carrier cooling, lower interfacial surface states, and slower carrier recombination time in CdSe@CdS core-shell with increasing shell thickness. By TA spectroscopy, the role of CdS shell in power conversion efficiency (PCE) has been explained in detail. The measured PCE was found to initially increase and then decrease with increasing shell thickness. Shell thickness has been optimized to maximize the efficiency after correlating the shell controlled carrier cooling and recombination with PCE values and a maximum PCE of 3.88 % was obtained with 4 monolayers of CdS shell, which is found to be 57 % higher than compared to bare CdSe QDs.