Stanislav S. Stoyko

Ternary arsenides A2Zn2As3 (A = Sr, Eu) and their stuffed derivatives A2Ag2ZnAs3.

The ternary arsenides A(2)Zn(2)As(3) and the quaternary derivatives A(2)Ag(2)ZnAs(3) (A = Sr, Eu) have been prepared by stoichiometric reaction of the elements at 800 °C. Compounds A(2)Zn(2)As(3) crystallize with the monoclinic Ba(2)Cd(2)Sb(3)-type structure (Pearson symbol mC28, space group C2/m, Z = 4; a = 16.212(5) Å, b = 4.275(1) Å, c = 11.955(3) Å, β = 126.271(3)° for Sr(2)Zn(2)As(3); a = 16.032(4) Å, b = 4.255(1) Å, c = 11.871(3) Å, β = 126.525(3)° for Eu(2)Zn(2)As(3)) in which CaAl(2)Si(2)-type fragments, built up of edge-sharing Zn-centered tetrahedra, are interconnected by homoatomic As-As bonds to form anionic slabs [Zn(2)As(3)](4-) separated by A(2+) cations. Compounds A(2)Ag(2)ZnAs(3) crystallize with the monoclinic Yb(2)Zn(3)Ge(3)-type structure (Pearson symbol mC32, space group C2/m; a = 16.759(2) Å, b = 4.4689(5) Å, c = 12.202(1) Å, β = 127.058(1)° for Sr(2)Ag(2)ZnAs(3); a = 16.427(1) Å, b = 4.4721(3) Å, c = 11.9613(7) Å, β = 126.205(1)° for Eu(2)Ag(2)ZnAs(3)), which can be regarded as a stuffed derivative of the Ba(2)Cd(2)Sb(3)-type structure with additional transition-metal atoms in tetrahedral coordination inserted to link the anionic slabs together. The Ag and Zn atoms undergo disorder but with preferential occupancy over four sites centered in either tetrahedral or trigonal planar geometry. The site distribution of these metal atoms depends on a complex interplay of size and electronic factors. All compounds are Zintl phases. Band structure calculations predict that Sr(2)Zn(2)As(3) is a narrow band gap semiconductor and Sr(2)Ag(2)ZnAs(3) is a semimetal. Electrical resistivity measurements revealed band gaps of 0.04 eV for Sr(2)Zn(2)As(3) and 0.02 eV for Eu(2)Zn(2)As(3), the latter undergoing an apparent metal-to-semiconductor transition at 25 K.

Quaternary Arsenides AM1.5Tt0.5As2 (A = Na, K, Rb; M = Zn, Cd; Tt = Si, Ge, Sn): Size Effects in CaAl2Si2- and ThCr2Si2-Type Structures

Ten quaternary arsenides AM(1.5)Tt(0.5)As2 (A = Na, K, Rb; M = Zn, Cd; Tt = Si, Ge, Sn) have been prepared by stoichiometric reactions of the elements at 600-650 °C. Seven of them (NaZn(1.5)Si(0.5)As2, NaZn(1.5)Ge(0.5)As2, NaZn(1.5)Sn(0.5)As2, NaCd(1.5)Sn(0.5)As2, KZn(1.5)Sn(0.5)As2, KCd(1.5)Sn(0.5)As2, RbCd(1.5)Sn(0.5)As2) adopt the trigonal CaAl2Si2-type structure (Pearson symbol hP5, space group P3m1, Z = 1, a = 4.0662(3)-4.4263(7) Å, c = 7.4120(5)-8.4586(14) Å), whereas the remaining three (KZn(1.5)Si(0.5)As2, KZn(1.5)Ge(0.5)As2, RbZn(1.5)Ge(0.5)As2) adopt the tetragonal ThCr2Si2-type structure (Pearson symbol tI10, space group I4/mmm, Z = 2, a = 4.0613(10)-4.1157(5) Å, c = 14.258(3)-14.662(2) Å). Both structure types contain anionic [M(1.5)Tt(0.5)As2] slabs that are built from edge-sharing tetrahedra and that stack alternately with nets of A cations. A structure map delineates the formation of these structure types for AM(1.5)Tt(0.5)As2 as a function of simple radius ratios. Although these arsenides have charge-balanced formulations, band structure calculations on NaZn(1.5)Tt(0.5)As2 (Tt = Si, Ge, Sn) indicate that semimetallic behavior is predicted as a result of overlap of the valence and conduction bands.

Ternary arsenides A2Zn5As4 (A = K, Rb): zintl phases built from stellae quadrangulae.

Stoichiometric reaction of the elements at high temperature yields the ternary arsenides K(2)Zn(5)As(4) (650 °C) and Rb(2)Zn(5)As(4) (600 °C). They adopt a new structure type (Pearson symbol oC44, space group Cmcm, Z = 4; a = 11.5758(5) Å, b = 7.0476(3) Å, c = 11.6352(5) Å for K(2)Zn(5)As(4); a = 11.6649(5) Å, b = 7.0953(3) Å, c = 11.7585(5) Å for Rb(2)Zn(5)As(4)) with a complex three-dimensional framework of linked ZnAs(4) tetrahedra generating large channels that are occupied by the alkali-metal cations. An alternative and useful way of describing the structure is through the use of stellae quadrangulae each consisting of four ZnAs(4) tetrahedra capping an empty central tetrahedron. These compounds are Zintl phases; band structure calculations on K(2)Zn(5)As(4) and Rb(2)Zn(5)As(4) indicate semiconducting behavior with a direct band gap of 0.4 eV.

Ternary Rare-Earth Arsenides REZn3As3 (RE = La–Nd, Sm) and RECd3As3 (RE = La–Pr)

Ternary rare-earth zinc arsenides REZn(3)As(3) (RE = La-Nd, Sm) with polymorphic modifications different from the previously known defect CaAl(2)Si(2)-type forms, and the corresponding rare-earth cadmium arsenides RECd(3)As(3) (RE = La-Pr), have been prepared by reaction of the elements at 800 °C. LaZn(3)As(3) adopts a new orthorhombic structure type (Pearson symbol oP28, space group Pnma, Z = 4, a = 12.5935(8) Å, b = 4.1054(3) Å, c = 11.5968(7) Å) in which ZnAs(4) tetrahedra share edges to form ribbons that are fragments of other layered arsenide structures; these ribbons are then interconnected in a three-dimensional framework with large channels aligned parallel to the b direction that are occupied by La(3+) cations. All remaining compounds adopt the hexagonal ScAl(3)C(3)-type structure (Pearson symbol hP14, space group P6(3)/mmc, Z = 2; a = 4.1772(7)-4.1501(2) Å, c = 20.477(3)-20.357(1) Å for REZn(3)As(3) (RE = Ce, Pr, Nd, Sm); a = 4.4190(3)-4.3923(2) Å, c = 21.4407(13)-21.3004(8) Å for RECd(3)As(3) (RE = La-Pr)) in which [M(3)As(3)](3-) layers (M = Zn, Cd), formed by a triple stacking of nets of close-packed As atoms with M atoms occupying tetrahedral and trigonal planar sites, are separated by La(3+) cations. Electrical resistivity measurements and band structure calculations revealed that orthorhombic LaZn(3)As(3) is a narrow band gap semiconductor.

Phase equilibria in the Mo-Fe-P system at 800 °C and structure of ternary phosphide (Mo(1-x)Fe(x))3P (0.10 ≤ x ≤ 0.15).

Construction of the isothermal section in the metal-rich portion (<67 atom % P) of the Mo-Fe-P phase diagram at 800 °C has led to the identification of two new ternary phases: (Mo(1-x)Fe(x))(2)P (x = 0.30-0.82) and (Mo(1-x)Fe(x))(3)P (x = 0.10-0.15). The occurrence of a Co(2)Si-type ternary phase (Mo(1-x)Fe(x))(2)P, which straddles the equiatomic composition MoFeP, is common to other ternary transition-metal phosphide systems. However, the ternary phase (Mo(1-x)Fe(x))(3)P is unusual because it is distinct from the binary phase Mo(3)P, notwithstanding their similar compositions and structures. The relationship has been clarified through single-crystal X-ray diffraction studies on Mo(3)P (α-V(3)S-type, space group I42m, a = 9.7925(11) Å, c = 4.8246(6) Å) and (Mo(0.85)Fe(0.15))(3)P (Ni(3)P-type, space group I4, a = 9.6982(8) Å, c = 4.7590(4) Å) at -100 °C. Representation in terms of nets containing fused triangles provides a pathway to transform these closely related structures through twisting. Band structure calculations support the adoption of these structure types and the site preference of Fe atoms. Electrical resistivity measurements on (Mo(0.85)Fe(0.15))(3)P reveal metallic behavior but no superconducting transition.

Quaternary germanides RE4Mn2InGe4 (RE = La-Nd, Sm, Gd-Tm, Lu).

The quaternary germanides RE4Mn2InGe4 (RE = La-Nd, Sm, Gd-Tm, Lu) have been prepared by arc-melting reactions of the elements and annealing at 800 °C and represent the second example of the RE4M2InGe4 series previously known only for M = Ni. Single-crystal X-ray diffraction studies conducted on the earlier RE members of RE4Mn2InGe4 confirmed that they adopt the monoclinic Ho4Ni2InGe4-type structure [space group C2/m, a = 16.646(2)-15.9808(9) Å, b = 4.4190(6)-4.2363(2) Å, c = 7.4834(10)-7.1590(4) Å, β = 106.893(2)-106.304(1)° in the progression of RE from La to Gd]. The covalent framework contains Mn-centered tetrahedra and Ge2 dimers that build up [Mn2Ge4] layers, which are held weakly together by four-coordinate In atoms and outline tunnels filled by the RE atoms. This bonding picture is supported by band-structure calculations. An alternative description based on Ge-centered trigonal prisms reveals that RE4Mn2InGe4 is closely related to RE2InGe2. The electrical resistivity behavior of Pr4Mn2InGe4 is similar to that of Pr2InGe2.

Ternary rare-earth iron arsenides RE12Fe57.5As41 (RE = La, Ce).

The rare-earth iron arsenides RE(12)Fe(57.5)As(41) (RE = La, Ce) have been prepared by direct reactions of the elements in the presence of a Sn flux. Analysis of single-crystal X-ray diffraction data reveals that they adopt a new orthorhombic structure type (Pearson symbol oP236, space group Pmmn, Z = 2; a = 10.8881(9) A, b = 25.753(2) A, c = 12.5436(10) A for RE = La; a = 10.8376(8) A, b = 25.639(2) A, c = 12.4701(9) A for RE = Ce). In this metal-rich arsenide, the complex three-dimensional network (derived from 4 RE, 24 Fe, and 17 As sites) can be described as being built from unusual wavelike layers of connected As-centered trigonal prisms. Five of the Fe sites are partially occupied. The electronic structure of these compounds was probed through core-line X-ray photoelectron spectra. Magnetic susceptibility measurements indicated ferromagnetic ordering at T(C) = 125 and 95 K for the La and Ce compounds, respectively. Electrical resistivity measurements on single crystals of Ce(12)Fe(57.5)As(41) showed metallic behavior with a prominent transition that coincides closely with the ferromagnetic ordering temperature.

Quaternary arsenides ACdGeAs2 (A = K, Rb) built of ethane-like Ge2As6 units.

Reactions of the elements at high temperature resulted in the quaternary arsenides KCdGeAs2 (650 °C) and RbCdGeAs2 (600 °C). Single-crystal X-ray diffraction analysis reveals that they adopt a new triclinic structure type (space group P1̅, Pearson symbol aP20, Z = 4; a = 8.0040(18) Å, b = 8.4023(19) Å, c = 8.703(2) Å, α = 71.019(3)°, β = 75.257(3)°, γ = 73.746(3)° for KCdGeAs2; a = 8.2692(13) Å, b = 8.4519(13) Å, c = 8.7349(13) Å, α = 71.163(2)°, β = 75.601(2)°, γ = 73.673(2)° for RbCdGeAs2). Two-dimensional anionic layers [CdGeAs2](-) are separated by A(+) cations and are built from ethane-like Ge2As6 units forming infinite chains connected via three- and four-coordinated Cd atoms. Being Zintl phases, these compounds satisfy charge balance and are expected to be semiconducting, as confirmed by band structure calculations on KCdGeAs2, which reveal a band gap of 0.8 eV. KCdGeAs2 is diamagnetic.

Quaternary pnictides with complex, noncentrosymmetric structures. Synthesis and structural characterization of the new Zintl phases Na11Ca2Al3Sb8, Na4CaGaSb3, and Na15Ca3In5Sb12.

Three new Zintl phases, Na11Ca2Al3Sb8, Na4CaGaSb3, and Na15Ca3In5Sb12, have been synthesized by solid-state reactions, and their structures have been determined by single-crystal X-ray diffraction. Na11Ca2Al3Sb8 crystallizes with its own structure type (Pearson index oP48) with the primitive orthorhombic space group Pmn2(1) (No. 31). The structure is best viewed as [Al3Sb8](15-) units of fused AlSb4 tetrahedra, a novel type of Zintl ion, with Na(+) and Ca(2+) cations that solvate them. Na4CaGaSb3 also crystallizes in its own type with the primitive monoclinic space group Pc (No. 7; Pearson index mP36), and its structure boasts one-dimensional [GaSb3](6-) helical chains of corner-shared GaSb4 tetrahedra. The third new compound, Na15Ca3In5Sb12, crystallizes with the recently reported K2BaCdSb2 structure type (space group Pmc2(1); Pearson index oP12). The Na15Ca3In5Sb12 structure is based on polyanionic layers made of corner-shared InSb4 tetrahedra. Approximately one-sixth of the In sites are vacant in a statistical manner. All three structures exhibit similarities to the TiNiSi structure type, and the corresponding relationships are discussed. Electronic band structure calculations performed using the tight-binding linear muffin-tin orbital atomic sphere approximation method show small band gaps for all three compounds, which suggests intrinsic semiconducting behavior for these materials.

Rare-Earth Manganese Copper Pnictides RE2Mn3Cu9Pn7 (Pn = P, As): Quaternary Ordered Variants of the Zr2Fe12P7-Type Structure

The pnictides RE(2)Mn(3)Cu(9)Pn(7) (Pn = P, As) have been prepared by stoichiometric reaction of the elements at 800 °C. They are quaternary ordered variants of the hexagonal Zr(2)Fe(12)P(7)-type structure (Pearson symbol hP21, space group P6, Z = 1; a = 9.6444(3)-9.5970(7) Å, c = 3.9027(1)-3.7761(3) Å for RE(2)Mn(3)Cu(9)P(7) (RE = La-Nd, Sm, Gd-Dy); a = 9.9376(6)-9.9130(3) Å, c = 4.0194(2)-3.9611(1) Å for RE(2)Mn(3)Cu(9)As(7) (RE = La-Nd)). Of the four possible sites available for the transition metal, the square pyramidal site (CN5) is occupied preferentially by Mn atoms, whereas the three tetrahedral sites (CN4) are occupied by Cu atoms. On proceeding to smaller RE members in the RE(2)Mn(3)Cu(9)Pn(7) series, one of the transition-metal-centered polyhedra (Cu1) tends to become less distorted, while the remaining three (Cu2, Cu3, Mn4) become more distorted. Band structure calculations on La(2)Mn(3)Cu(9)P(7) confirm that Mn-P and Cu-P contacts provide the strongest bonding interactions. Electrical resistivity measurements on Ce(2)Mn(3)Cu(9)P(7) reveal metallic behavior with transitions at 165 and 18 K, probably of magnetic origin.