Stanko Tomić

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers

By measuring the spontaneous emission (SE) from normally operating /spl sim/1.3-/spl mu/m GaInNAs-GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K. From the SE measurements we determine how the current I close to threshold, varies as a function of carrier density n, which enables us to separate out the main current paths corresponding to monomolecular (defect-related), radiative or Auger recombination. We find that defect-related recombination forms /spl sim/55% of the threshold current at room temperature (RT). At RT, radiative recombination accounts for /spl sim/20% of I/sub th/ with the remaining /spl sim/25% being due to nonradiative Auger recombination. Theoretical calculations of the threshold carrier, density as a function of temperature were also performed, using a ten-band k /spl middot/ p Hamiltonian. Together with the experimentally determined defect-related, radiative, and Auger currents we deduce the temperature variation of the respective recombination coefficients (A, B, and C). These are compared with theoretical calculations of the coefficients and good agreement is obtained. Our results suggest that by eliminating the dominant defect-related current path, the threshold current density of these GaInNAs-GaAs-based devices would be approximately halved at RT. Such devices could then have threshold current densities comparable with the best InGaAsP/InP-based lasers with the added advantages provided by the GaAs system that are important for vertical integration.

Tight-binding and k?p models for the electronic structure of Ga(In)NAs and related alloys

We review how the tight-binding method provides a particularly useful approach to understand the electronic structure of GaInNAs alloys, and use it to derive a modified k?p model for the electronic structure of GaInNAs heterostructures. Using the tight-binding model, we first confirm that N forms a resonant defect level above the conduction band edge in Ga(In)As. We show that the interaction of the resonant N level with the conduction band edge accounts for the strong bandgap bowing observed in GaInNxAs1?x, in agreement with experimental analysis but contrary to some theoretical interpretations. We then use a Green function model to derive explicitly the two-level band-anti-crossing model describing the interaction between the resonant states and the conduction band edge in ordered Ga(In)NxAs1?x. We extend the Green function model to show that the conventional k?p model must be modified to include two extra spin-degenerate nitrogen states, giving a 10-band k?p model to describe the band structure of GaNAs/GaAs and related heterostructures. We describe how this 10-band model provides excellent quantitative agreement with a wide range of experimental data and finally discuss briefly the effects of disorder on the electronic structure in dilute nitride alloys.

Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules

We report for the first time a successful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell concentrator photovoltaic (QD-IBSC-CPV) module to the IEC62108 standard with recorded power conversion efficiency of 15.3%. Combining the measured experimental results at Underwriters Laboratory (UL®) licensed testing laboratory with theoretical simulations, we confirmed that the operational characteristics of the QD-IBSC-CPV module are a consequence of the carrier dynamics via the intermediate-band at room temperature.

Parallel multi-band k·p code for electronic structure of zinc blend semiconductor quantum dots

We present a parallel implementation of the multi-bank k·p code () for calculation of the electronic structure and optical properties of zinc blend structure semiconductor quantum dots. The electronic wave-functions are expanded in a plane wave basis set in a similar way to ab initio calculations. This approach allows one to express the strain tensor components, the piezoelectric field and the arbitrary shape of the embedded quantum dot in the form of coefficients in the Fourier transform, significantly simplifying the implementation. Most of the strain elements can be given in an analytical form, while very complicated quantum dot shapes can be modelled as a linear combination of the Fourier transform of several characteristic shapes: box, cylinder, cone etc. We show that the parallel implementation of the code scales very well up to 512 processors, giving us the memory and processor power to either include more bands, as in the dilute nitrogen quantum dot structures, or to perform calculations on bigger quantum dots/supercells structures keeping the same “cut-off” energy. The program performance is demonstrated on the pyramidal shape InAs/GaAs, dilute nitrogen InGaAsN, and recently emerged volcano-like InAs/GaAs quantum dot systems.

Gain characteristics of ideal dilute nitride quantum well lasers

Abstract We use a realistic Hamiltonian to compare the gain characteristics of an ideal InGaAsN/GaAs quantum well laser structure emitting at 1.3 μm with an equivalent N-free InGaAs/GaAs structure. The energy gap of InGaAs is reduced by the addition of N, due to a repulsive interaction between an N resonant band and the conduction band edge. This interaction increases the conduction band edge effective mass and decreases the value of the dipole matrix element linking the conduction and valence band edges. We find that the addition of N reduces the peak gain and differential gain at fixed carrier density, although the gain saturation value and the peak gain as a function of radiative current density are largely unchanged due to the incorporation of N.

Plane wave methodology for single quantum dot electronic structure calculations

The development of the plane wave methodology for the calculation of the electronic structure of single quantum dots within the framework of multiband envelope function theory was presented. The methodology developed enables one to use a small embedding box, sufficient to eliminate electronic coupling, without introducing the artificial interaction with periodically replicated array of quantum dots caused by periodic boundary conditions. The appropriate formulas for Fourier transforms of strain tensor components on the embedding box that eliminate the strain field of the neighboring dots were derived. The expressions that enable the evaluation of Coulomb integrals in inverse space without the introduction of artificial electrostatic interactions with surrounding dots were presented. It was also shown how symmetry can be exploited to further reduce the computational effort in the case of quantum dots of symmetric shape. Numerical results illustrating the application of the methods to the calculation of sin...

Intersubband gain without global inversion through dilute nitride band engineering

We investigate the possibility of interconduction band gain without global inversion by engineering the conduction band effective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different.

Parallel implementation of the ab initio CRYSTAL program: electronic structure calculations for periodic systems

CRYSTAL is an ab initio electronic structure program, based on the linear combination of atomic orbitals, for periodic systems. This paper concerns the ability of CRYSTAL to exploit massively parallel computer hardware. A brief review of the theory, numerical implementations and parallel solutions will be given and some of the functionalities and capabilities highlighted. Some features that are unique to CRYSTAL will be described and development plans outlined.

Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)

The unusual N-induced band formation and band structure of Ga(N, As) and (Ga, In)(N, As) alloys are also reflected in the electronic structure of quantum wells (QWS) and device structures containing these non-amalgamation-type alloys. This review is divided into three parts. The first part deals with band structure aspects of bulk Ga(N, As) and motivates the possibility of a k · p-like parameterization of the band structure in terms of the level repulsion model between the conduction band edge of the host and a localized N-level. The second part presents experimental studies of interband transitions in Ga(N, As)/GaAs and (Ga, In)(N, As)/GaAs QW structures addressing band offsets, electron effective mass changes and an intrinsic mechanism contributing to the blueshift of the (Ga, In)(N, As) band gap on annealing. The observed interband transitions can be well described using a ten-band k · p model based on the level repulsion scheme. The third part deals with (Ga, In)(N, As)-based laser devices. The electronic structure of the active region of vertical-cavity surface-emitting laser and edge-emitter laser structures is studied by modulation spectroscopy. The gain of such structures is measured by optical methods and analysed in terms of a model combining the ten-band k · p description of the band structure and generalized Bloch equations.

Optimization of material parameters in 1.3-μm InGaAsN-GaAs lasers

We use a 10-band k/spl middot/p Hamiltonian to investigate gain characteristics of 1.3- /spl mu/m InGaAsN-GaAs 7-nm quantum-well lasers as a function of indium and nitrogen content. The parameters used were obtained by comparison with experimental transition energy data and fitting to measured spontaneous-emission line broadening. We conclude that optimum device performance is obtained by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness.