Stefan Fält

Quantum nature of a strongly coupled single quantum dot–cavity system

Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is strongly coupled to a cavity mode, it is possible to realize important quantum information processing tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly desirable, and coupling semiconductor self-assembled quantum dots to monolithic optical cavities is a promising route to this end. However, validating the efficacy of quantum dots in quantum information applications requires confirmation of the quantum nature of the quantum-dot–cavity system in the strong-coupling regime. Here we find such confirmation by observing quantum correlations in photoluminescence from a photonic crystal nanocavity interacting with one, and only one, quantum dot located precisely at the cavity electric field maximum. When off-resonance, photon emission from the cavity mode and quantum-dot excitons is anticorrelated at the level of single quanta, proving that the mode is driven solely by the quantum dot despite an energy mismatch between cavity and excitons. When tuned to resonance, the exciton and cavity enter the strong-coupling regime of cavity QED and the quantum-dot exciton lifetime reduces by a factor of 145. The generated photon stream becomes antibunched, proving that the strongly coupled exciton/photon system is in the quantum regime. Our observations unequivocally show that quantum information tasks are achievable in solid-state cavity QED.

Conditional Dynamics of Interacting Quantum Dots

Conditional quantum dynamics, where the quantum state of one system controls the outcome of measurements on another quantum system, is at the heart of quantum information processing. We demonstrate conditional dynamics for two coupled quantum dots, whereby the probability that one quantum dot makes a transition to an optically excited state is controlled by the presence or absence of an optical excitation in the neighboring dot. Interaction between the dots is mediated by the tunnel coupling between optically excited states and can be optically gated by applying a laser field of the right frequency. Our results represent substantial progress toward realization of an optically effected controlled–phase gate between two solid-state qubits.

Observation of Dressed Excitonic States in a Single Quantum Dot

We report the observation of dressed states of a quantum dot. The optically excited exciton and biexciton states of the quantum dot are coupled by a strong laser field and the resulting spectral signatures are measured using differential transmission of a probe field. We demonstrate that the anisotropic electron-hole exchange interaction induced splitting between the x- and y-polarized excitonic states can be completely erased by using the ac-Stark effect induced by the coupling field, without causing any appreciable broadening of the spectral lines. We also show that by varying the polarization and strength of a resonant coupling field, we can effectively change the polarization axis of the quantum dot.

Direct measurement of spin dynamics in InAs/GaAs quantum dots using time-resolved resonance fluorescence

We temporally resolve the resonance fluorescence from an electron spin confined to a single self-assembled quantum dot to measure directly the spins optical initialization and natural relaxation timescales. Our measurements demonstrate that spin initialization occurs on the order of microseconds in the Faraday configuration when a laser resonantly drives the quantum dot transition. We show that the mechanism mediating the optically induced spin-flip changes from electron-nuclei interaction to hole-mixing interaction at 0.6 Tesla external magnetic field. Spin relaxation measurements result in times on the order of milliseconds and suggest that a

Nanoscale optical electrometer.

B^{-5}

Strong electron-hole exchange in coherently coupled quantum dots.

magnetic field dependence, due to spin-orbit coupling, is sustained all the way down to 2.2 Tesla.

Coupling quantum dot spins to a photonic crystal nanocavitya)

We propose and demonstrate an all-optical approach to single-electron sensing using the optical transitions of a semiconductor quantum dot. The measured electric-field sensitivity of 5 (V/m)/√Hz corresponds to detecting a single electron located 5 μm from the quantum dot-nearly 10 times greater than the diffraction limited spot size of the excitation laser-in 1 s. The quantum-dot-based electrometer is more sensitive than other devices operating at a temperature of 4.2 K or higher and further offers suppressed backaction on the measured system.

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells

We have investigated few-body states in vertically stacked quantum dots. Because of a small interdot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange plays a prominent role. By tuning the gate bias, we are able to turn this coupling off and study a complementary regime where total electron spin is a good quantum number. The use of differential transmission allows us to obtain unambiguous signatures of the interplay between electron and hole-spin interactions. Small tunnel coupling also enables us to demonstrate all-optical charge sensing, where a conditional exciton energy shift in one dot identifies the charging state of the coupled partner.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

We present a method that allows for deterministic coupling of charge-tunable quantum dots to high-Q photonic crystal nanocavity modes. The realization of cavity-mediated coherent coupling of two distant spins is hindered by large fluctuations in quantum dot optical (trion) transition energy and interdot separation. We show that flexible cavity design and gate-voltage-tunable trion transitions in quantum dot molecules can be used to overcome these limitations and to achieve conditional quantum dynamics of two confined spins.

Improvement of the transport properties of a high-mobility electron system by intentional parallel conduction

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 MΩ, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.