Stefan Mendach

Highly uniform and strain-free GaAs quantum dots fabricated by filling of self-assembled nanoholes

We demonstrate the self-assembled creation of a novel type of strain-free semiconductor quantum dot (QD) by local droplet etching (LDE) with Al to form nanoholes in AlGaAs or AlAs surfaces and subsequent filling with GaAs. Since the holes are filled with a precisely defined filling level, we achieve ultrauniform LDE QD ensembles with extremely narrow photoluminescence (PL) linewidth of less than 10 meV. The PL peaks agree with a slightly anisotropic parabolic potential. Small QDs reveal indications for transitions between electron and hole states with different quantization numbers. For large QDs, a very small fine-structure splitting is observed.

Lithographically defined metal-semiconductor-hybrid nanoscrolls

We report on two-layer metal-semiconductor-hybrid scrolls fabricated from rolled-up strained metal∕InGaAs-layers. As the central approach, the metallic layer itself acts as a stressor in contact with the semiconductor. Position and length of the scrolls can be precisely tuned by patterning the e-beam-evaporated metallic stressor with conventional lithographic techniques. The thickness of the metallization determines the radius of the resulting scrolls. This fabrication technique significantly improves the reliability and simplifies the fabrication of metal∕semiconductor three-dimensional objects which employ bending up layers. Even more important, using this technique the bending radius of such three-dimensional objects can easily be downsized to very small radii in the nanometer scale, e.g. in order to build nano-electro-mechanical systems.

Optical Modes Excited by Evanescent-Wave-Coupled PbS Nanocrystals in Semiconductor Microtube Bottle Resonators

We report on optical modes in rolled-up microtube resonators that are excited by PbS nanocrystals filled into the microtube core. Long ranging evanescent fields into the very thin walled microtubes cause strong emission of the nanocrystals into the resonator modes and a mode shift after a self-removal of the solvent. We present a method to precisely control the number, the energy and the localization of the modes along the microtube axis.

Spin-wave interference in three-dimensional rolled-up ferromagnetic microtubes.

We have investigated spin-wave excitations in rolled-up Permalloy microtubes using microwave absorption spectroscopy. We find a series of quantized azimuthal modes which arise from the constructive interference of Damon-Eshbach-type spin waves propagating around the circumference of the microtubes, forming a spin-wave resonator. The mode spectrum can be tailored by the tubes radius and number of rolled-up layers.

Spin wave diffraction and perfect imaging of a grating.

We study the diffraction of Damon-Eshbach-type spin waves incident on a one-dimensional grating realized by microslits in a thin Permalloy film. By means of time-resolved scanning Kerr microscopy, we observe unique diffraction patterns behind the grating which exhibit replications of the spin wave field at the slits. We show that these spin wave images, with details finer than the wavelength of the incident Damon-Eshbach spin wavelength, arise from the strongly anisotropic spin wave dispersion.

Local etching of nanoholes and quantum rings with InxGa1−x droplets

We study the formation of nanoholes and quantum rings in GaAs and AlGaAs surfaces by local droplet etching with InxGa1−x. The rings are crystallized from droplet material and surround the nanohole openings. In particular, the influence of the In content x on density, diameter, and depth of the nanoholes is investigated. Our data establish an exponential dependence of these quantities on x, which is quantitatively reproduced by a model that considers different surface diffusion energy barriers for Ga and In. By etching with pure In, hole densities as low as 5×106 cm−2 have been achieved. In addition, for low In content incompletely removed initial droplets are visible on the surface. These droplets are not visible on samples with x>0.5 which indicates a higher desorption rate of In compared to Ga. As a consequence, even in the case of etching with InGa the quantum rings consist of nearly pure GaAs. This is confirmed by photoluminescence experiments of quantum rings overgrown with AlGaAs barrier material.

Rolled-up nanotechnology for the fabrication of three-dimensional fishnet-type GaAs-metal metamaterials with negative refractive index at near-infrared frequencies

We propose and demonstrate the fabrication of a three-dimensional fishnet metamaterial by utilizing rolled-up nanotechnology. It consists of 6 alternating layers of silver and (In)GaAs with an array of subwavelength holes “drilled” by focused ion beams. By means of finite-integration technique simulations, we show that the fabricated structure is a single-negative material possessing a negative real part of the refractive index in the near-infrared regime. We show that the fabricatedmaterial can be made double negative by slightly changing the size of the holes.

Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes

We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40μeV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size.

Strong coupling between surface plasmon polariton and laser dye rhodamine 800

We report on strong coupling between surface plasmon polaritons on a thin silver film and laser dye Rhodamine 800. Attenuated total reflection measurements reveal that the pure surface plasmon polaritons interact with the Rhodamine 800 absorption lines exhibiting pronounced anticrossings in the dispersion relation. We show that the corresponding energy gap can be tailored by the concentration of dye molecules in the dielectric matrix between 50 meV and 70 meV. We can well model our data by a classical transfer matrix approach as well as by a quantum mechanical coupled oscillator ansatz.

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.