Stefan Muff

Disentanglement of Surface and Bulk Rashba Spin Splittings in Noncentrosymmetric BiTeI

BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to a giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data in the UV and soft x-ray regime that clearly disentangle the surface from the bulk electronic structure. Spin-resolved UV-ARPES measurements on opposite, nonequivalent surfaces show identical spin structures, thus clarifying the surface state character. Soft x-ray ARPES data clearly reveal the spindle-torus shape of the bulk Fermi surface, induced by the spin-orbit interaction. PACS numbers: 71.20.Nr, 71.70.Ej, 79.60.Bm 1 ar X iv :1 20 4. 21 96 v1 [ co nd -m at .m tr lsc i] 1 0 A pr 2 01 2 The breaking of inversion symmetry and its influence on the spin structure of surface states under action of spin–orbit interaction (SOI) has been extensively studied in recent years [1, 2]. The main finding is that the surface states become spin-split according to the Rashba model [3] resulting in two spin-polarized concentric Fermi contours. The lack of inversion symmetry in the bulk crystal structure is expected to induce a spin splitting with a more complex bandand spin-structure. Combined with strong SOI the Fermi surface can take the shape of a torus [4]. For non-centrosymmetric superconductors such as for example CePt3Si [5] this peculiar band structure is expected to result in topologically protected spin polarized edge states reminiscent of Majorana modes [6]. Recently, an ARPES and spin-resolved ARPES study by Ishizaka et al. [7] proposed that the semiconductor BiTeI features a very large spin-splitting, arising from the broken inversion symmetry in the crystal bulk and a strong SOI. Theoretical work based on the perturbative k ·p formalism linked the unusually large spin splitting in BiTeI to the negative crystal field splitting of the top valence bands [8]. Optical transition measurements [9] are in accordance with the giant bulk spin-splitting of the gap defining valence and conduction bands predicted by first principle calculations [7, 8]. In addition it was shown in recent theoretical work that BiTeI can become a topological insulator under action of hydrostatic pressure [10], and thus is closely related to non-centrosymmetric topological superconductors. The present study provides first band mapping of a system without bulk inversion symmetry and giant SOI by the example of BiTeI, featuring a three-dimensional Rashba splitting of the bulk bands. Further it is shown that the Rashba-split state observed for this material in the UV photon energy regime is not a quantum well state [7] but rather a surface state, using a simple symmetry argument based on spin-resolved ARPES (SARPES) measurements, which is confirmed by first principle calculations. All measurements were performed at the Swiss Light Source of the Paul-Scherrer-Institut. The SARPES data was measured with the Mott polarimeter at the COPHEE endstation [11] of the Surface and Interface Spectroscopy beamline at a photon energy of 24 eV. The spin-integrated data at photon energies 20-63 eV were taken at the high-resolution ARPES endstation at the same beamline. The soft x-ray ARPES data were taken at the SX-ARPES endstation of the ADRESS beamline at photon energies of 310-850 eV. All spin-integrated measurements were performed at a sample temperature of 11 K and a base pressure lower than 10−10 mbar, the SARPES data was taken at 20 K.

Direct observation of the spin texture in SmB6 as evidence of the topological Kondo insulator

Topological Kondo insulators have been proposed as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to strong spin-orbit coupling. In contrast to other three-dimensional topological insulators, a topological Kondo insulator is truly bulk insulating. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. By applying spin- and angle-resolved photoemission spectroscopy, here we show that the surface states of SmB6 are spin polarized. The spin is locked to the crystal momentum, fulfilling time reversal and crystal symmetries. Our results provide strong evidence that SmB6 can host topological surface states in a bulk insulating gap stemming from the Kondo effect, which can serve as an ideal platform for investigating of the interplay between novel topological quantum states with emergent effects and competing orders induced by strongly correlated electrons.

Observation of Fermi-Arc Spin Texture in TaAs

We have investigated the spin texture of surface Fermi arcs in the recently discovered Weyl semimetal TaAs using spin- and angle-resolved photoemission spectroscopy. The experimental results demonstrate that the Fermi arcs are spin polarized. The measured spin texture fulfills the requirement of mirror and time-reversal symmetries and is well reproduced by our first-principles calculations, which gives strong evidence for the topologically nontrivial Weyl semimetal state in TaAs. The consistency between the experimental and calculated results further confirms the distribution of chirality of the Weyl nodes determined by first-principles calculations.

Disentangling bulk and surface Rashba effects in ferroelectric α -GeTe

1Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland 2New Technologies-Research Center University of West Bohemia, Plzeň, Czech Republic 3Department of Chemistry, Ludwig Maximillian University, 81377 Munich, Germany 4Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Praha 2, Czech Republic 5Physik-Institut, Universität Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland 6Institute of condensed matter physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland 7Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria 8SwissFEL, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland

Separating the bulk and surface n- to p-type transition in the topological insulator GeBi4-xSbxTe7

We identify the multilayered compound GeBi4Te7 to be a topological insulator with a Dirac point slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisfies the time reversal symmetry of the surface states, visible in spin-resolved ARPES. For increasing Sb content in GeBi4-xSbxTe7 we observe a transition from n to p type in bulk sensitive Seebeck coefficient measurements at a doping of x = 0.6. In surface sensitive ARPES measurements a rigid band shift is observed with Sb doping, accompanied by a movement of the Dirac point towards the Fermi level. Between x = 0.8 and x = 1 the Fermi level crosses the band gap, changing the surface transport regime. This difference of the n- to p-type transition between the surface region and the bulk is caused by band bending effects which are also responsible for a noncoexistence of insulating phases in the bulk and in the near surface region.

Entanglement and manipulation of the magnetic and spin–orbit order in multiferroic Rashba semiconductors

Entanglement of the spin–orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric α-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin–orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure.

Spin-resolved photoemission study of epitaxially grown MoSe2 and WSe2 thin films

Few-layer thick MoSe2 and WSe2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin-orbit coupling. We report a spin-resolved photoemission study of MoSe2 and WSe2 thin film samples epitaxially grown on a bilayer graphene substrate. We only found spin polarization in the single- and trilayer samples-not in the bilayer sample-mostly along the out-of-plane direction of the sample surface. The measured spin polarization is found to be strongly dependent on the light polarization as well as the measurement geometry, which reveals intricate coupling between the spin and orbital degrees of freedom in this class of material.

Interband spin?orbit coupling between anti-parallel spin states in Pb quantum well states

Using spin and angle-resolved photoemission spectroscopy we investigate a momentum region in Pb quantum well states on Si(111) where hybridization between Rashba-split bands alters the band structure significantly. Starting from the Rashba regime where the dispersion of the quasi-free two-dimensional electron gas is well described by two spin-polarized parabolas, we find a breakdown of the Rashba behavior which manifests itself (i) in a spin splitting that is no longer proportional to the in-plane momentum and (ii) in a reversal of the sign of the momentum splitting. Our experimental findings are well explained by including interband spin?orbit coupling that mixes Rashba-split states with anti-parallel rather than parallel spins. Similar results for Pb/Cu(111) reveal that the proposed hybridization scenario is independent on the supporting substrate.

Clean, cleaved surfaces of the photovoltaic perovskite

The surface of a material is not only a window into its bulk physical properties, but also hosts unique phenomena important for understanding the properties of a solid as a whole. Surface sensitive techniques, like ARPES (Angle-resolved photoemission spectroscopy), STM (Scanning tunneling microscopy), AFM (Atomic force microscopy), pump-probe optical measurements etc. require flat, clean surfaces. These can be obtained by cleaving, which is usually possible for layered materials. Such measurements have proven their worth by providing valuable information about cuprate superconductors, graphene, transition metal dichalcogenides, topological insulators and many other novel materials. Unfortunately, this was so far not the case for the cubic, organo-metallic photovoltaic perovskite which morsels during the cleavage. Here we show a method which results in flat, clean surfaces of CH3NH3PbBr3 which allows surface sensitive measurements, badly needed for the understanding and further engineering of this material family.

Response of the topological surface state to surface disorder in TlBiSe2

Through a combination of experimental techniques we show that the topmost layer of the topological insulator TlBiSe2 as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands cannot be regarded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as direct evidence of its topological self-protection and shows the robust nature of the Dirac cone-like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe2.