Stefan Wittekoek

Faraday Rotation and Optical Absorption of Epitaxial Films of Y3−xBixFe5O12

Thin films of Y3−xBixFe5O12 (x ≤ 0.3) have been grown on Gd3Ga5O12 and Sm3Ga5O12 substrates by liquid phase epitaxy. Faraday rotation and optical absorption measurements between 0.7 and 0.4 micron are reported. Near 0.5 the FR has a large negative value of −3 degrees/micron for x = 0.26 as compared with +0.3 degrees/micron for YIG. Both the optical absorption and the figure of merit (rotation/absorption) are higher for the Bi containing garnet films. The promising properties of these materials for magneto‐optic applications are discussed.Thin films of Y3−xBixFe5O12 (x ≤ 0.3) have been grown on Gd3Ga5O12 and Sm3Ga5O12 substrates by liquid phase epitaxy. Faraday rotation and optical absorption measurements between 0.7 and 0.4 micron are reported. Near 0.5 the FR has a large negative value of −3 degrees/micron for x = 0.26 as compared with +0.3 degrees/micron for YIG. Both the optical absorption and the figure of merit (rotation/absorption) are higher for the Bi containing garnet films. The promising properties of these materials for magneto‐optic applications are discussed.

Philips Wafer Stepper: Characterization And Processing Experience

The operation of the Philips Wafer stepper and the automated measurement techniques used to characterize it are reviewed. Characterization data in terms of registration accuracy, lens performance and throughput are presented. Finally, our processing experience with this stepper is described.