Stephan Lany

n -type doping of CuIn Se 2 and CuGa Se 2

The efficiency of

Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (VSe-VCu) vacancy complex

\mathrm{CuIn}{\mathrm{Se}}_{2}

Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

based solar cell devices could improve significantly if

Polaronic Hole Localization and Multiple Hole Binding of Acceptors in Oxide Wide-Gap Semiconductors

\mathrm{CuGa}{\mathrm{Se}}_{2}

Accurate prediction of defect properties in density functional supercell calculations

, a wider band gap chalcopyrite semiconductor, could be added to the

Charge self-regulation upon changing the oxidation state of transition metals in insulators

\mathrm{CuIn}{\mathrm{Se}}_{2}

Defect Tolerant Semiconductors for Solar Energy Conversion.

absorber layer. This is, however, limited by the difficulty of doping

Assessing capability of semiconductors to split water using ionization potentials and electron affinities only.

n

Many-body GW calculation of the oxygen vacancy in ZnO

-type

Evaluation of photovoltaic materials within the Cu-Sn-S family

\mathrm{CuGa}{\mathrm{Se}}_{2}