Stéphanie Bruyère

Local heteroepitaxial growth to promote the selective growth orientation, crystallization and interband transition of sputtered NiO thin films

The room temperature growth of highly oriented sputtered NiO thin films on glass and silicon substrates previously covered with a oriented Cu2O film is reported. The results are compared to those obtained from single layer NiO thin films using the same deposition conditions. Electron microdiffraction analyses indicate that NiO columns are heteroepitaxially grown on the columns of a Cu2O seed layer. The well-matched atomic configurations between the Cu atoms in the {111} planes of Cu2O and the O atoms in the {111} planes of NiO may provide a strong driving force to promote this local heteroepitaxial growth. Such heteroepitaxial growth behavior in the columns can significantly improve crystallization. Moreover, valence electron energy loss spectroscopy has been employed to investigate the interband transition properties of the NiO films, which shows that the interband transition intensity can be tuned by this local heteroepitaxial growth.

Room temperature self-assembled growth of vertically aligned columnar copper oxide nanocomposite thin films on unmatched substrates

In this work, we report the self-assembled growth of vertically aligned columnar Cu2O + Cu4O3 nanocomposite thin films on glass and silicon substrates by reactive sputtering at room temperature. Microstructure analyses show that each phase in nanocomposite films has the columnar growth along the whole thickness, while each column exhibits the single phase characteristics. The local epitaxial growth behavior of Cu2O is thought to be responsible for such an unusual microstructure. The intermediate oxygen flow rate between those required to synthesize single phase Cu2O and Cu4O3 films produces some Cu2O nuclei, and then the local epitaxial growth provides a strong driving force to promote Cu2O nuclei to grow sequentially, giving rise to Cu2O columns along the whole thickness. Lower resistivity has been observed in such kind of nanocomposite thin films than that in single phase thin films, which may be due to the interface coupling between Cu2O and Cu4O3 columns.

Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films

Yb3+ ions hold promises for high power emission in the near infrared (NIR). Yet, relevant matrices, comprising mediators to excite Yb3+, have to be found and the optical mechanisms have to be studied in detail. The purpose of this study is to report on the optical excitation and emission mechanisms of NIR photoluminescence (PL) of Yb-doped crystalline aluminum oxynitride thin films prepared at room temperature using reactive magnetron sputtering. Crystal structure and chemical composition are analyzed by transmission electron microscope and Rutherford backscattering spectrometry, respectively. Photoluminescence spectroscopies are used to investigate the excitation and emission mechanisms. NIR emission at 985 nm is obtained under indirect optical excitation using the 325 nm line of a He-Cd laser, the excitation mechanism is explored by photoluminescence excitation measurement (PLE), and the fine structure of the emitted energy levels is investigated by performing PL measurements at low temperature (LTPL). PLE shows that the host defects play the role of mediators to transfer the excitation energy to Yb ions. This offers different possibilities for the development of multiple excitation channels for Yb3+. Stark splitting of the energy levels of the 2F5/2 and 2F7/2 transitions is evidenced using LTPL in the 78 to 295 K range. Electronic transitions are ascribed to experimental emission lines based on good agreement with theoretical values. Moreover, the activation energies for PL thermal quenching are determined and correspond to the energy difference between highest energy quenched lines and thermally activated “hotlines.”Yb3+ ions hold promises for high power emission in the near infrared (NIR). Yet, relevant matrices, comprising mediators to excite Yb3+, have to be found and the optical mechanisms have to be studied in detail. The purpose of this study is to report on the optical excitation and emission mechanisms of NIR photoluminescence (PL) of Yb-doped crystalline aluminum oxynitride thin films prepared at room temperature using reactive magnetron sputtering. Crystal structure and chemical composition are analyzed by transmission electron microscope and Rutherford backscattering spectrometry, respectively. Photoluminescence spectroscopies are used to investigate the excitation and emission mechanisms. NIR emission at 985 nm is obtained under indirect optical excitation using the 325 nm line of a He-Cd laser, the excitation mechanism is explored by photoluminescence excitation measurement (PLE), and the fine structure of the emitted energy levels is investigated by performing PL measurements at low temperature (LTPL). ...