Stephen E. Saddow

Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

Stoichiometric and pure Al2O3 gate dielectric films were grown on n-type 4H-SiC by a thermal atomic layer deposition process. The electrical properties of both amorphous and epitaxial Al2O3 films were studied by capacitance-voltage and current-voltage measurements of metal-oxide-semiconductor capacitors. A dielectric constant of 9 and a flatband voltage shift of +1.3V were determined. A leakage current density of 10−3A∕cm2 at 8MV∕cm was obtained for the amorphous Al2O3 films, lower than that of any high-κ gate oxide on 4H-SiC reported to date. A Fowler-Nordheim tunneling mechanism was used to determine an Al2O3∕4H-SiC barrier height of 1.58eV. Higher leakage current was obtained for the epitaxial γ-Al2O3 films, likely due to grain boundary conduction.

Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates.

Brain machine interface (BMI) devices offer a platform that can be used to assist people with extreme disabilities, such as amyotrophic lateral sclerosis (ALS) and Parkinsons disease. Silicon (Si) has been the material of choice used for the manufacture of BMI devices due to its mechanical strength, its electrical properties and multiple fabrication techniques; however, chronically implanted BMI devices have usually failed within months of implantation due to biocompatibility issues and the fact that Si does not withstand the harsh environment of the body. Single crystal cubic silicon carbide (3C‐SiC) and nanocrystalline diamond (NCD) are semiconductor materials that have previously shown good biocompatibility with skin and bone cells. Like Si, these materials have excellent physical characteristics, good electrical properties, but unlike Si, they are chemically inert. We have performed a study to evaluate the general biocompatibility levels of all of these materials through the use of in vitro techniques. H4 human neuroglioma and PC12 rat pheochromocytoma cell lines were used for the study, and polystyrene (PSt) and amorphous glass were used as controls or for morphological comparison. MTT [3‐(4,5‐Dimethylthiazol‐2‐Yl)‐2,5‐Diphenyltetrazolium Bromide] assays were performed to determine general cell viability with each substrate and atomic force microscopy (AFM) was used to quantify the general cell morphology on the substrate surface along with the substrate permissiveness to lamellipodia extension. 3C‐SiC was the only substrate tested to have good viability and superior lamellipodia permissiveness with both cell lines, while NCD showed a good level of viability with the neural H4 line but a poor viability with the PC12 line and lower permissiveness than 3C‐SiC. Explanations pertaining to the performance of each substrate with both cell lines are presented and discussed along with future work that must be performed to further evaluate specific cell reactions on these substrates. Copyright

4H–SiC photoconductive switching devices for use in high-power applications

Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar structures on high-resistivity 4H–SiC and tested at dc bias voltages up to 1000 V. The typical maximum photocurrent of the device at 1000 V was about 49.4 A. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3×1011, respectively. Photoconductivity pulse widths for all applied voltages were 8–10 ns. These excellent results are due in part to the removal of the surface damage by high-temperature H2 etching and surface preparation. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large step width were achieved.

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.

Biocompatibility and wettability of crystalline SiC and Si surfaces

Crystalline silicon carbide (SiC) and silicon (Si) biocompatibility was evaluated by directly culturing three mammalian cell lines on these semiconducting substrates. Cell proliferation and adhesion quality were studied using MTT [3- (4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide] assays and fluorescent microscopy. The reported results show that SiC is indeed a more biocompatible substrate than Si. The surface wettability of SiC and Si samples was evaluated through static contact angle measurements, which provided interesting information regarding the influence of different cleaning procedures on the SiC surfaces. The cell proliferation data are discussed in light of the contact angle measurements results. This joint analysis leads to interesting conclusions that may help to uncover the main factors that define a semiconductors biocompatibility.

Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates

Epitaxial 4H–SiC layers were grown by chemical vapor deposition (CVD) on porous silicon carbide. Porous SiC substrates were fabricated by the formation of a 2 to 15 μm thick porous SiC layer on commercial off-axis 4H–SiC substrates. The thickness of CVD grown layers was about 2.5 μm. The concentration Nd–Na in the layers was about 7×1015 cm−3. The layers were investigated for their surface roughness, crystal structure, deep level concentration, and minority carrier diffusion length. It was found that the characteristics of SiC epitaxial layers grown on porous SiC substrates were significantly improved compared to those of SiC layers grown on standard SiC substrates.

Development of a high-growth rate 3C-SiC on Si CVD process

Growth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth additive. A low-pressure horizontal hot-wall CVD reactor was employed to perform the deposition. The growth rate dependences on silane mole fraction, the process pressure and the growth time were determined experimentally. The growth rate dependence on silane mole fraction was found to follow a linear relationship. The 3C-SiC films were characterized by Normaski Optical Microscopy, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. The X-ray rocking curve taken on the (002) diffraction plane displayed a FWHM of 360 arcsec which indicates that the films are monocrystalline.

A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations

A comprehensive study on the hydrogen etching of numerous SiC polytype surfaces and orientations has been performed in a hot wall CVD reactor under both atmospheric and low pressure conditions. The polytypes studied were 4H and 6H-SiC as well as 3C-SiC grown on Si substrates. For the hexagonal polytypes the wafer surface orientation was both on- and off-axis, i.e. C and Si face. The investigation includes the influence of the prior surface polishing method on the required etching process parameters. 3C-SiC was also studied grown in both the (100) and (111) orientations. After etching, the samples were analyzed via atomic force microscopy (AFM) to determine the surface morphology and the height of the steps formed. For all cases the process conditions necessary to realize a well-ordered surface consisting of unit cell and sub-unit cell height steps were determined. The results of these experiments are summarized and samples of the corresponding AFM analysis presented.

Observation of the D‐center in 6H‐SiC p‐n diodes grown by chemical vapor deposition

The D‐center in 6H‐SiC is a boron‐related deep hole trap observed previously in LPE‐grown 6H‐SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D‐center signature is observed in high‐purity n‐ and p‐type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture cross section between 1×10−14 cm2 and 3×10−14 cm2 was determined for this level. Even though the D‐center in these diodes is thought to arise from unintended trace contamination, we observed within the same diode a factor of twenty greater density of this level in the n‐type layer than in the p‐type layer, which is explained by a recently proposed site competition model for impurity doping during 6H‐SiC CVD growth.

Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications

Crystalline silicon carbide (SiC) and silicon (Si) biocompatibility was evaluated in vitro by directly culturing three skin and connective tissue cell lines, two immortalized neural cell lines, and platelet-rich plasma (PRP) on these semiconducting substrates. The in vivo biocompatibility was then evaluated via implantation of 3C-SiC and Si shanks into a C57/BL6 wild type mouse. The in vivo results, while preliminary, were outstanding with Si being almost completely enveloped with activated microglia and astrocytes, indicating a severe immune system response, while the 3C-SiC film was virtually untouched. The in vitro experiments were performed specifically for the three adopted SiC polytypes, namely 3C-, 4H- and 6H-SiC, and the results were compared to those obtained for Si crystals. Cell proliferation and adhesion quality were studied using MTT [3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide] assays and fluorescent microscopy. The neural cells were studied via atomic force microscopy (AFM) which was used to quantify filopodia and lamellipodia extensions on the surface of the tested materials. Fluorescent microscopy was used to assess platelet adhesion to the semiconductor surfaces where significantly lower values of platelet adhesion to 3C-SiC was observed compared to Si. The reported results show good indicators that SiC is indeed a more biocompatible substrate than Si. While there were some differences among the degree of biocompatibility of the various SiC polytypes tested, SiC appears to be a highly biocompatible material in vitro that is also somewhat hemocompatible. This extremely intriguing result appears to put SiC into a unique class of materials that is both bio- and hemo-compatible and is, to the best of our knowledge, the only semiconductor with this property.