Stephen Glick

System voltage potential-induced degradation mechanisms in PV modules and methods for test

Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or coulombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress

Acceleration factors are calculated for crystalline silicon photovoltaic modules under system voltage stress by comparing the module power during degradation outdoors with that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data, considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in situ of the test chamber, dark I–V measurements are obtained and transformed using superposition, which is found to be well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared with those stressed in accelerated tests.

Creep in photovoltaic modules: Examining the stability of polymeric materials and components

Interest in renewable energy has motivated the implementation of new polymeric materials in photovoltaic modules. Some of these are non-cross-linked thermoplastics, in which there is a potential for new behaviors to occur, including phase transformation and visco-elastic flow. Differential scanning calorimetry and rheometry data were obtained and then combined with existing site-specific time-temperature information in a theoretical analysis to estimate the displacement expected to occur during module service life. The analysis identified that, depending on the installation location, module configuration and/or mounting configuration, some of the thermoplastics are expected to undergo unacceptable physical displacement. While the examples here focus on encapsulation materials, the concerns apply equally to the frame, junction-box, and mounting-adhesive technologies.

Acceleration factor determination for potential-induced degradation in crystalline silicon PV modules

Potential-induced degradation in conventional p-type silicon-based photovoltaic solar cell modules is described as a failure mechanism involving positive ion migration, understood to be primarily Na+, drifting from the glass to the cells in negative-voltage arrays. Acceleration factors for this mechanism are determined for silicon photovoltaic modules by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at the constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. Estimation of module power in-situ in the environmental chamber is achieved using dark I-V measurements transformed by superposition. By this means, the power of the degrading module can be semi-continuously determined so that statistical data for multiple modules undergoing potential-induced degradation can be easily and accurately obtained.

Interlaboratory Study to Determine Repeatability of the Damp-Heat Test Method for Potential-Induced Degradation and Polarization in Crystalline Silicon Photovoltaic Modules

To test reproducibility of a technical specification under development for potential-induced degradation (PID) and polarization, three crystalline silicon module types were distributed in five replicas each to five laboratories. Stress tests were performed in environmental chambers at 60 °C, 85% relative humidity, 96 h, and with module nameplate system voltage applied. Results from the modules tested indicate that the test protocol can discern susceptibility to PID according to the pass/fail criteria with acceptable consistency from lab to lab; however, areas for improvement are indicated to achieve better uniformity in temperature and humidity on the module surfaces. In the analysis of variance of the results, 6% of the variance was attributed to laboratory influence, 34% to module design, and 60% to variability in test results within a given design. Testing with the additional factor of illumination with ultraviolet light slowed or arrested the degradation. Testing at 25 °C with aluminum foil as the module ground was also examined for comparison. The foil, as tested, did not itself achieve consistent contact to ground at all surfaces, but methods to ensure more consistent grounding were found and proposed. The rates of degradation in each test are compared, and details affecting the rates are discussed.

Survey of potential-induced degradation in thin-film modules

Abstract. Two CdTe and two copper indium gallium (di)selenide (CIGS)-type modules were tested for potential-induced degradation (PID) with positive and negative 1000 V biases applied to the active cell circuit in an 85°C, 85% relative humidity environmental chamber. Various degradation mechanisms could be seen with signatures such as shunting, transparent conductive oxide (TCO) corrosion, charge carrier lifetime reduction, and dead active layer at edges along with resulting cell mismatch. All modules tested exhibited degradation by system voltage stress in chamber, but only one module type has degraded in parallel field tests. I−V curve data indicated that one CdTe-type module sequentially exhibited shunting followed by a recovery and then series resistance losses. This module type showed TCO delamination from the glass in the environmental chamber tests and also exhibited power degradation within 5 weeks in field tests. Relative rates of Coulomb transfer from the voltage-biased active cell circuit to ground are compared for the modules in chamber tests to those placed outdoors under system voltage stress to extrapolate the anticipated time to failure in the field. This analysis correctly indicated which module type failed in the field first.

Quantifying solar cell cracks in photovoltaic modules by electroluminescence imaging

This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the modules electroluminescence intensity distribution, applied at module and cell level. These concepts are demonstrated on a crystalline silicon photovoltaic module that was subjected to several rounds of mechanical loading and humidity-freeze cycling, causing increasing levels of solar cell cracks. The proposed method can be used as a diagnostic tool to rate cell damage or quality of modules after transportation. Moreover, the method can be automated and used in quality control for module manufacturers, installers, or as a diagnostic tool by plant operators and diagnostic service providers.

Effects of photovoltaic module soiling on glass surface resistance and potential-induced degradation

The sheet resistance of three soil types (Arizona road dust, soot, and sea salt) on glass were measured by the transmission line method as a function of relative humidity (RH) between 39% and 95% at 60°C. Sea salt yielded a 3.5 orders of magnitude decrease in resistance on the glass surface when the RH was increased over this RH range. Arizona road dust showed reduced sheet resistance at lower RH, but with less humidity sensitivity over the range tested. The soot sample did not show significant resistivity change compared to the unsoiled control. Photovoltaic modules with sea salt on their faces were step-stressed between 25% and 95% RH at 60°C applying -1000 V bias to the active cell circuit. Leakage current from the cell circuit to ground ranged between two and ten times higher than that of the unsoiled controls. Degradation rate of modules with salt on the surface increased with increasing RH and time.

Influence of Impurities in Module Packaging on Potential-Induced Degradation

Chemical compounds were added into crystalline silicon cell mini modules, including in the encapsulant, interfaces, and glass, to determine their effect on potential-induced degradation (PID). Fe, either in the glass or at the glass/encapsulant interface, was found to be correlated with increased PID, but the difference in module power loss was not statistically significant compared to controls. Additions of Cu, Cr, Pb, Sn, Ag, and Na compounds to either the encapsulant or at the glass/encapsulant interface did not appear correlated with PID. Lock-in thermography on bare cells affected by PID removed from the mini modules show highly localized areas of junction breakdown, and SIMS analysis indicates localized impurities as well, though a spatial relation between the two was not established. Deposition of a conductive layer on the front surface of the cell, either with semitransparent Ta or Poly 3,4-ethylenedioxythiophene (PEDOT), eliminated PID when the cells were stressed at -1000 V bias, 50 degrees C, with the glass face grounded for 140 h.

Application of the terrestrial photovoltaic module accelerated test-to-failure protocol

The Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol was applied to seven crystalline silicon module types to test the durability of the various module constructions on a quantitative basis in chamber and to evaluate the protocol itself. The modules under test are subdivided into three accelerated lifetime testing paths: 85°C/85% relative humidity with system voltage bias, thermal cycling between - 40°C and 85°C, and paths that alternate between humidity with bias (one in each polarity) and thermal cycling. Three of the module types were also fielded to ascertain degradation mechanisms occurring in the natural environment for comparison to the mechanisms seen in the accelerated testing. Potential induced-degradation in modules negatively biased and silicon nitride antireflective coating thinning on cells in modules positively biased are among the important mechanisms that are seen both in the modules stressed in the natural environment and in chamber. Junction box failure, cell breakage, and acid-assisted metallization degradation are included in the mechanisms seen in chamber tests, and they vary significantly between module types. Per a goal of the accelerated test protocol, we found examples of modules with components and process methods that showed degradation mechanisms that occurred faster than incumbents that had satisfactory field experience. These were evaluated as opportunities for durability improvement. Conversely, types that showed substantial improvement were also seen, especially with respect to system voltage stress durability.