Stephen Maldonado

Analysis of the operation of thin nanowire photoelectrodes for solar energy conversion

The solar energy conversion properties of thin Si and GaP nanowire photoelectrodes in photoelectrochemical cells have been examined through sets of finite-element simulations. A discussion describing the motivation behind nanostructured, high aspect ratio semiconductor photoelectrode designs and a brief survey of current experimental results reported for nanostructured semiconductor photoelectrodes in photoelectrochemical cells are presented first. An analysis is then shown that outlines the primary recombination pathways governing the steady-state current-potential behaviors of thin, cylindrical nanowire photoelectrodes, with explicit expressions detailing the differences between planar and cylindrical photoelectrodes arising from the solution of carrier fluxes in planar and cylindrical geometries. Results from finite-element simulations used to model the key features of thin nanowire photoelectrodes under low-level injection conditions are shown that illustrate which recombination pathway(s) is operative under various experimental conditions. Specifically, the respective effects of non-uniform doping, tapering along the length, variation in charge carrier mobilities and lifetimes, changes in nanowire radius, and changes in the density of surface defects on the observable photocurrent-potential responses are reported. These cumulative results serve as guides for future experimental work aimed at improving the attainable solar energy conversion efficiencies of doped semiconductor nanowire photoelectrodes. Lastly, separate simulations that model lightly doped nanowire photoelectrodes under high-level injection conditions are discussed. These results suggest discrete, ohmic-selective contacts may afford a way to circumvent the stringent doping requirements discussed herein for thin nanowire photoelectrodes.

Uniform Thin Films of CdSe and CdSe(ZnS) Core(shell) Quantum Dots by Sol-Gel Assembly: Enabling Photoelectrochemical Characterization and Electronic Applications

Optoelectronic properties of quantum dot (QD) films are limited by (1) poor interfacial chemistry and (2) nonradiative recombination due to surface traps. To address these performance issues, sol-gel methods are applied to fabricate thin films of CdSe and core(shell) CdSe(ZnS) QDs. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with chemical analysis confirms that the surface of the QDs in the sol-gel thin films are chalcogen-rich, consistent with an oxidative-induced gelation mechanism in which connectivity is achieved by formation of dichalcogenide covalent linkages between particles. The ligand removal and assembly process is probed by thermogravimetric, spectroscopic, and microscopic studies. Further enhancement of interparticle coupling via mild thermal annealing, which removes residual ligands and reinforces QD connectivity, results in QD sol-gel thin films with superior charge transport properties, as shown by a dramatic enhancement of electrochemical photocurrent under white light illumination relative to thin films composed of ligand-capped QDs. A more than 2-fold enhancement in photocurrent, and a further increase in photovoltage can be achieved by passivation of surface defects via overcoating with a thin ZnS shell. The ability to tune interfacial and surface characteristics for the optimization of photophysical properties suggests that the sol-gel approach may enable formation of QD thin films suitable for a range of optoelectronic applications.

Benchtop Electrochemical Liquid–Liquid–Solid Growth of Nanostructured Crystalline Germanium

An electrochemical liquid-liquid-solid (ec-LLS) process that produces large amounts of crystalline semiconductors with tunable nanostructured shapes without any physical or chemical templating agent is presented. Electrodeposition of Ge from GeO(2)(aq) solutions followed by dissolution into a liquid Hg electrode, saturation of the liquid alloy, and precipitation can yield polycrystalline Ge(s) under ambient conditions. A unique advantage of ec-LLS is that it involves precipitation under electrochemical control, where the applied bias precisely defines the flux of Ge into the liquid electrode. Fidelity of the saturation and precipitation of Ge from liquid electrodes affords a variety of material morphologies, including dense films of oriented nanostructured filaments with large aspect ratios (>10(3)). Electrodeposition involving a liquid electrolyte, a liquid electrode, and a solid deposit under ambient conditions represents a conceptually unexplored direct wet-chemical route for the preparation of bulk quantities of crystalline group-IV semiconductors without the time- and energy-intensive processing steps required in traditional preparations of semiconductor materials.

Voltammetric Characterization of Redox-Inactive Guest Binding to LnIII[15-Metallacrown-5] Hosts Based on Competition with a Redox Probe

A novel competitive binding assay was implemented to monitor the binding of a redox inactive substrate to a redox inactive metallacrown host based on its competition with ferrocene carboxylate (FcC(-)) using cyclic voltammetry (CV). First, the binding of FcC(-) to Ln(III)[15-MC(Cu(II),N,L-pheHA)-5] (LnMC) hosts was characterized by cyclic voltammetry. It was shown that the voltammetric half wave potentials, E(1/2), shifted to more positive potentials upon the addition of LnMC. The explicit dependence of E(1/2) with the concentration of LnMC was used to determine the association constants for the complex. The FcC(-) binding strength decreased with larger central lanthanide metals in the LnMC hosts, and substantially weaker binding was observed with La(III). X-ray crystallography revealed that the hydrophobic host cavity incompletely encapsulated FcC(-) when the guest was bound to the nine-coordinate La(III), suggesting the LnMCs ligand side chains play a substantial role in guest recognition. With knowledge of the MC-FcC(-) solution thermodynamics, the binding affinity of a redox inactive guest was then assessed. Addition of sodium benzoate to a LnMC and FcC(-) mixture resulted in E(1/2) shifting back to the value observed for FcC(-) in the absence of LnMC. The association constants between benzoate and LnMCs were calculated via the competitive binding approach. Comparison with literature values suggests this novel assay is a viable method for determining association constants for host-guest systems that exhibit the proper electrochemical behavior. Notably, this CV competitive binding approach does not require the preparation of a modified electrode or a tethered guest, and thus can be generalized to a number of host-guest systems.

Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions

Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, vn, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.

Near-ideal photodiodes from sintered gold nanoparticle films on methyl-terminated Si(111) surfaces

We report photocurrent-voltage data for improved n-Si/metal devices using CH_3-terminated n-Si(111) and Au nanoparticles (NPs). CH_3-terminated Si(111) surfaces maintain good electronic properties throughout device assembly, while the use of Au NPs as precursors to metal films circumvents the standard issues associated with interfacial reactivity of metals in Schottky barrier formation. Such devices demonstrate excellent photovoltaic properties, with photovoltages that approach the maximum values predicted for photodiodes that are limited by Si bulk diffusion/recombination processes rather than interfacial processes. These devices are compared to standard n-Si/Au devices made via thermally evaporated Au films which are well-known to be limited by junction-based recombination.

High efficiency thin upgraded metallurgical-grade silicon solar cells on flexible substrates

We present a thin film (<20 μm) solar cell based on upgraded metallurgical-grade polycrystalline Si that utilizes silver nanoparticles atop silicon nanopillars created by block copolymer nanolithography to enhance light absorption and increase cell efficiency η > 8%. In addition, the solar cells are flexible and semitransparent so as to reduce balance of systems costs and open new applications for conformable solar cell arrays on a variety of surfaces. Detailed studies on the optical and electrical properties of the resulting solar cells suggest that both antireflective and light-trapping mechanisms are key to the enhanced efficiency.

Electrochemical oxidation of catecholamines and catechols at carbon nanotube electrodes

The differences in the electrochemical oxidation of two commonly known catecholamines, dopamine and norepinephrine, and one catechol, dihydroxyphenylacetic acid (DOPAC), at three different types of carbon based electrodes comprising conventionally polished glassy carbon (GC), nitrogen-doped carbon nanotubes (N-CNTs), and non-doped CNTs were assessed. Raman microscopy and X-ray photoelectron spectroscopy (XPS) were employed to evaluate structural and compositional properties. Raman measurements indicate that N-CNT electrodes have ca. 2.4 times more edge plane sites over non-doped CNTs. XPS data show no evidence of oxygen functionalities at the surface of either CNT type. N-CNTs possess 4.0 at. % nitrogen as pyridinic, pyrrolic, and quaternary nitrogen functionalities that result in positively charged carbon surfaces in neutral and acidic solutions. The electrochemical behavior of the various carbon electrodes were investigated by cyclic voltammetry conducted in pH 5.8 acetate buffer. Semiintegral analysis of the voltammograms reveals a significant adsorptive character of dopamine and norepinephrine oxidation at N-CNT electrodes. Larger peak splittings, DeltaE(p), for the cyclic voltammograms of both catecholamines and a smaller DeltaE(p) for the cyclic voltammogram for DOPAC at N-CNT electrodes suggest that electrostatic interactions hinder oxidation of cationic dopamine and norepinephrine, but facilitate anionic DOPAC oxidation. These observations were supported by titrimetry of solid suspensions to determine the pH of point of zero charge (pH(pzc)) and estimate the number of basic sites for both CNT varieties. This study demonstrates that carbon purity, the presence of exposed edge plane sites, surface charge, and basicity of CNTs are important factors for influencing adsorption and enhancing the electrochemical oxidation of catecholamines and catechols.

Dye-sensitized photocathodes: efficient light-stimulated hole injection into p-GaP under depletion conditions.

The steady-state photoelectrochemical responses of p-GaP photoelectrodes immersed in aqueous electrolytes and sensitized separately by six triphenylmethane dyes (rose bengal, rhodamine B, crystal violet, ethyl violet, fast green fcf, and brilliant green) have been analyzed. Impedance measurements indicated that these p-GaP(100) photoelectrodes operated under depletion conditions with an electric field of ∼8.5 × 10(5) V cm(-1) at the p-GaP/solution interface. The set of collected wavelength-dependent quantum yield responses were consistent with sensitization occurring specifically from adsorbed triphenylmethane dyes. At high concentrations of dissolved dye, the measured steady-state photocurrent-potential responses collected at sub-bandgap wavelengths suggested unexpectedly high (>0.1) net internal quantum yields for sensitized hole injection. Separate measurements performed with rose bengal adsorbed on p-GaP surfaces pretreated with (NH(4))(2)S verified efficient sensitized hole injection. A modified version of wxAMPS, a finite-difference software package, was utilized to assess key operational features of the sensitized p-GaP photocathodes. The net analysis showed that the high internal quantum yield values inferred from the experimental data were most likely afforded by the internal electric field present within p-GaP, effectively sweeping injected holes away from the interface and minimizing their participation in deleterious pathways that could limit the net collection yield. These simulations defined effective threshold values for the charge carrier mobilities (≥10(-6) cm(2) V(-1) s(-1) and ≥10(-1) cm(2) V(-1) s(-1) at dopant densities of 10(18) and 10(13) cm(-3), respectively), hole injection rate constants (≥10(12) s(-1)), and surface trap densities (10(12) cm(-2)) needed to attain efficient hole collection with the quality of p-GaP materials used here. The cumulative experimental and modeling data thus provide insight on design strategies for assembling new types of dye-sensitized photocathodes that operate under depletion conditions.

Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium phosphide using a Grignard reaction sequence.

Single-crystalline gallium phosphide (GaP) surfaces have been functionalized with alkyl groups via a sequential Cl-activation, Grignard reaction process. X-ray photoelectron (XP) spectra of freshly etched GaP(111)A surfaces demonstrated reproducible signals for surficial Cl after treatment with PCl(5) in chlorobenzene. The measured Cl content consistently corresponded to approximately a monolayer of coverage on GaP(111)A. In contrast, GaP(111)B surfaces treated with the same PCl(5) solution under the same conditions exhibited macroscale roughening and yielded XP spectra that showed irreproducible Cl surface content often below the limit of detection of the spectrometer. The Cl-activated GaP(111)A surfaces were reactive toward alkyl Grignard reagents. Sessile contact angle measurements between water and GaP(111)A after various levels of treatment showed that GaP(111)A surfaces became significantly more hydrophobic following reaction with either CH(3)MgCl or C(18)H(37)MgCl. GaP(111)A surfaces reacted with C(18)H(37)MgCl demonstrated wetting properties consistent with surfaces modified with a dense layer of long alkyl chains. High-resolution C 1s XP spectra indicated that the carbonaceous species at GaP(111)A surfaces treated with Grignard reagents could not be ascribed solely to adventitious carbon. A shoulder in the C 1s XP spectra occurred at slightly lower binding energies for these samples, commensurate with the formation of Ga-C bonds. High-resolution P 2p XP spectra taken at various times during prolonged direct exposure to ambient laboratory air indicated that the resistance of GaP(111)A to surface oxidation was greatly enhanced after surface modification with alkyl groups. GaP(111)A samples that had been functionalized with C(18)H(37)- groups exhibited less than 0.1 nm of surface oxide after 7 weeks of continuous exposure to ambient air. GaP(111)A surfaces terminated with C(18)H(37)- groups were also used as platforms in Schottky heterojunctions with Hg. In comparison to freshly etched GaP(111)A, the alkyl-terminated GaP(111)A samples yielded current-voltage responses that were in accord with metal-insulator-semiconductor devices and indicated that this reaction strategy could be used to alter rates of heterogeneous charge transfer controllably. The wet chemical surface functionalization strategy described herein does not involve thiol/sulfide chemistry or gas-phase pretreatments and represents a new synthetic methodology for controlling the interfacial properties of GaP and related Ga-based III-V semiconductors.