Subroto Mukerjee

Optimal thermoelectric figure of merit of a molecular junction

We show that a molecular junction can give large values of the thermoelectric figure of merit

Anomalously large measured thermoelectric power factor in Sr1−xLaxTiO3 thin films due to SrTiO3 substrate reduction

ZT

Doping dependence of thermopower and thermoelectricity in strongly correlated materials

, and so it could be used as a solid-state energy-conversion device that operates close to the Carnot efficiency. The mechanism is similar to the Mahan-Sofo model for bulk thermoelectrics\char22{}the Lorenz number goes to zero violating the Wiedemann-Franz law while the thermopower remains nonzero. The molecular state through which charge is transported must be weakly coupled to the leads, and the energy level of the state must be of order

Dynamics after a sweep through a quantum critical point.

{k}_{B}T

Tuning the electronic effective mass in double-doped SrTiO3

away from the Fermi energy of the leads. In practice, the figure of merit is limited by the phonon thermal conductance; we show that the largest possible

Topological defects and the superfluid transition of the s=1 spinor condensate in two dimensions.

ZT\ensuremath{\sim}{({\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{G}}_{\text{th}}^{\text{ph}})}^{\ensuremath{-}1/2}

Many-Body Localization in the Presence of a Single-Particle Mobility Edge.

, where

Vortex lattice transitions in cyclic spinor condensates

{\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{G}}_{\text{th}}^{\text{ph}}

Thermoelectricity in graphene: Effects of a gap and magnetic fields

is the phonon thermal conductance divided by the thermal conductance quantum.

Signatures of diffusion and ballistic transport in the stiffness, dynamical correlation functions, and statistics of one-dimensional systems

We report the observation that thermoelectric thin films of La-doped SrTiO3 grown on SrTiO3 substrates yield anomalously high values of thermopower to give extraordinary values of power factor at 300 K. Thin films of Sr0.98La0.02TiO3, grown via pulsed laser deposition at low temperature and low pressure (450 °C, 10−7 Torr), do not yield similarly high values when grown on other substrates. The thin-film growth induces oxygen reduction in the SrTiO3 crystals, doping the substrate n type. It is found that the backside resistance of the SrTiO3 substrates is as low ( ∼ 12Ω/◻) as it is on the film side after film growth