Sudhir Husale

Electric field directed self-assembly of cuprous oxide nanostructures for photon sensing.

We demonstrate a novel chemical-free water-based technique to synthesize various forms of cuprous oxide nanostructures at room temperature. The self-assemblies of these nanostructures are formed by the anodic oxidation of Cu in deionized (DI) water. Direct growth of these nanostructures on SiO(2)/Si (100) substrate has been successfully achieved by tuning the bias voltage and the growth duration. A variety of nanostructures from one-dimensional nanowires to different complex two- and three-dimensional structures are successfully grown by this method. We show that the morphological evolution in the self-assembly of the structures strongly depends on the spatial electric field distribution on the substrate. Furthermore, the electrical devices made from these nanowire networks exhibit promising photon sensing characteristics under white light illumination and can be exploited for future applications in photodetection and photovoltaic studies at the nanoscale level.

Controlled Assembly of Ag Nanoparticles and Carbon Nanotube Hybrid Structures for Biosensing

Here we report a chemical-free, simple, and novel method in which a part from a silver-based anode is controllably used in a straightforward manner to produce silver nanoparticles (Ag NPs) in order to fabricate a controlled assembly of Ag NPs and single walled carbon nanotube (SWCNT) hybrid structures. The attachment and distribution of Ag NPs along SWCNTs have been investigated and characterized by field emission scanning electron microscopy (FESEM). We have achieved the decoration of SWCNTs with different densities of Ag NPs by changing the deposition time, the applied voltage, and the location of carbon nanotubes with respect to the anode. At low voltage, single silver nanoparticle is successfully attached at the open ends of SWCNTs whereas at high voltage, intermediate and full coverage densities of Ag NPs are observed. As voltage is further increased, fractals of Ag NPs along SWCNTs are observed. In addition, a device based on a Ag NPs-SWNT hybrid structure is used for the label-free detection of ssDNA molecules immobilized on it. We believe that the proposed method can be used to decorate and/or assemble metal nanoparticles or fractal patterns along SWCNTs with different novel metals such as gold, silver, and copper and can be exploited in various sensitive applications for fundamental research and nanotechnology.

ssDNA Binding Reveals the Atomic Structure of Graphene

We used AFM to investigate the interaction of polyelectrolytes such as ssDNA and dsDNA molecules with graphene as a substrate. Graphene is an appropriate substrate due to its planarity, relatively large surfaces that are detectable via an optical microscope, and straightforward identification of the number of layers. We observe that in the absence of the screening ions deposited ssDNA will bind only to the graphene and not to the SiO(2) substrate, confirming that the binding energy is mainly due to the π-π stacking interaction. Furthermore, deposited ssDNA will map the graphene underlying structure. We also quantify the π-π stacking interaction by correlating the amount of deposited DNA with the graphene layer thickness. Our findings agree with reported electrostatic force microscopy (EFM) measurements. Finally, we inspected the suitability of using a graphene as a substrate for DNA origami-based nanostructures.

High performance broadband photodetector using fabricated nanowires of bismuth selenide

Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.

Fabrication of non-polar GaN based highly responsive and fast UV photodetector

We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

In the last few years, research based on topological insulators (TIs) has been of great interest due to their intrinsic exotic fundamental properties and potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and the study of their transport properties has mostly focused on high quality crystalline nanowires or nanoribbons. Here, we report a robust approach to Bi2Se3 nanowire formation from deposited flakes using an ion beam milling method. Fabricated Bi2Se3 nanowire devices were employed to investigate the robustness of the topological surface state (TSS) to gallium ion doping and any deformation in the material due to the fabrication tools. We report on the quantum oscillations in magnetoresistance (MR) curves under the parallel magnetic field. The resistance versus magnetic field curves are studied and compared with Aharonov-Bohm (AB) interference effects, which further demonstrate transport through the TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations, and these can be exploited further in studying the exotic electronic properties associated with TI-based nanodevices.

Hot electron induced NIR detection in CdS films

We report the use of random Au nanoislands to enhance the absorption of CdS photodetectors at wavelengths beyond its intrinsic absorption properties from visible to NIR spectrum enabling a high performance visible-NIR photodetector. The temperature dependent annealing method was employed to form random sized Au nanoparticles on CdS films. The hot electron induced NIR photo-detection shows high responsivity of ~780 mA/W for an area of ~57 μm2. The simulated optical response (absorption and responsivity) of Au nanoislands integrated in CdS films confirms the strong dependence of NIR sensitivity on the size and shape of Au nanoislands. The demonstration of plasmon enhanced IR sensitivity along with the cost-effective device fabrication method using CdS film enables the possibility of economical light harvesting applications which can be implemented in future technological applications.

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions

Due to miniaturization of device dimensions, the next generation’s photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm–1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi2Te3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi2Te3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi2Te3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

abstractThe elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.

FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance.

Since the discovery of topological insulators (TIs), there are considerable interests in demonstrating metallic surface states (SS), their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstrate the robustness of topological surface states (TSS) to the presence of disorder that does not break any fundamental symmetry. The simple straightforward method of FIB milling was used to synthesize nanowires of Bi2Se3 which we believe is an interesting route to test robustness of TSS and the obtained results are new compared to many of the earlier papers on quantum transport in TI demonstrating the robustness of metallic SS to gallium (Ga) doping. In the presence of perpendicular magnetic field, we have observed the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance (LMR), which was systematically investigated for different channel lengths, indicating the Dirac dispersive surface states. The transport properties and estimated physical parameters shown here demonstrate the robustness of SS to the fabrication tools triggering flexibility to explore new exotic quantum phenomena at nanodevice level.