Sudipta Roy Barman

Designing shape-memory Heusler alloys from first-principles

The phase diagrams of magnetic shape-memory Heusler alloys, in particular, ternary Ni-Mn-Z and quarternary (Pt, Ni)-Mn-Z alloys with Z = Ga, Sn, have been addressed by density functional theory and Monte Carlo simulations. Finite temperature free energy calculations show that the phonon contribution stabilizes the high-temperature austenite structure while at low temperatures magnetism and the band Jahn-Teller effect favor the modulated monoclinic 14M or the nonmodulated tetragonal structure. The substitution of Ni by Pt leads to a series of magnetic shape-memory alloys with very similar properties to Ni-Mn-Ga but with a maximal eigenstrain of 14%.

Magnetic properties and electronic structure of Mn–Ni–Ga magnetic shape memory alloys

Influence of disorder, antisite defects, martensite transition and compositional variation on the magnetic properties and electronic structure of Mn(2)NiGa and Mn(1+x)Ni(2-x)Ga magnetic shape memory alloys have been studied by using full potential spin-polarized scalar relativistic Korringa-Kohn-Rostocker (FP-SPRKKR) method. Mn(2)NiGa is ferrimagnetic and its total spin moment increases when disorder in the occupancy of MnNi (Mn atom in Ni position) is considered. The moment further increases when Mn-Ga antisite defect [1] is included in the calculation. A reasonable estimate of TC for Mn(2)NiGa is obtained from the exchange parameters for the disordered structure. Disorder influences the electronic structure of Mn(2)NiGa through overall broadening of the density of states and a decrease in the exchange splitting. Inclusion of antisite defects marginally broaden the minority spin partial DOS (PDOS), while the majority spin PDOS is hardly affected. For Mn(1+x)Ni(2-x)Ga where 1 ⩾ x ⩾ 0, as x decreases, Mn(Mn) moment increases while Mn(Ni) moment decreases in both austenite and martensite phases. For x ⩾ 0.25, the total moment of the martensite phase is smaller compared to the austenite phase, which indicates possible occurrence of inverse magnetocaloric effect. We find that the redistribution of Ni 3d- Mn(Ni) 3d minority spin electron states close to the Fermi level is primarily responsible for the stability of the martensite phase in Mn-Ni-Ga.

Intermediate stages of surface state formation and collapse of topological protection to transport in Bi2Se3

Surface states consisting of helical Dirac fermions have been extensively studied in three-dimensional topological insulators. Yet, experiments to date have only investigated fully formed topological surface states (TSS) and it is not known whether preformed or partially formed surface states can exist or what properties they could potentially host. Here, by decorating thin films of Bi2Se3 with nanosized islands of the same material, we show for the first time that not only can surface states exist in various intermediate stages of formation but they exhibit unique properties not accessible in fully formed TSS. These include tunability of the Dirac cone mass, vertical migration of the surface state wave-function and the appearance of mid-gap Rashba-like states as exemplified by our theoretical model for decorated TIs. Our experiments show that an interplay of Rashba and Dirac fermions on the surface leads to an intriguing multi-channel weak anti-localization effect concomitant with an unprecedented tuning of the topological protection to transport. Our work offers a new route to engineer topological surface states involving Dirac-Rashba coupling by nano-scale decoration of TI thin films, at the same time shedding light on the real-space mechanism of surface state formation in general.

Surface alloying in Sn/Au(111) at elevated temperature

On the basis of x-ray photoelectron spectroscopy, we show that when Sn is deposited on Au(111) single crystal surface at a substrate temperature TS=373 K, surface alloying occurs with the formation of AuSn phase. The evolution of the surface structure and the surface morphology has been studied by low energy electron diffraction and scanning tunneling microscopy, respectively as a function of Sn coverage and substrate temperatures.

Spontaneous Reduction of Copper(II) to Copper(I) at Solid–Liquid Interface

Oxidation and reduction reactions are of central importance in chemistry as well as vital to the basic functions of life and such chemical processes are generally brought about by oxidizing and reducing agents, respectively. Herein, we report the discovery of an interfacial reduction reaction (IRR) - without the use of any external reducing agent. In course of metal-ligand coordination, spontaneous reduction of Cu(II) to Cu(I) at a solid-liquid interface was observed-unlike in a liquid-phase reaction where no reduction of Cu(II) to Cu(I) was occurred. High-quality thin films of a new coordination network compound bearing a Fe(II)-CN-Cu(I) link were fabricated by IRR and employed for efficient electro-catalysis in the form of oxygen reduction reaction. Also, thermally activated reversible structural phase transition modulated the electron transport property in thin film. This work unveils the importance of chemical reactions at solid-liquid interfaces that can lead to the development of new functional thin film materials.