Suhas Bhandarkar

Selected-area sol-gel deposition of barium strontium titanate thin films on thermally oxidized silicon through mediation of self-assembled monolayers

Abstract Self-assembled monolayers (SAMs) of octadecyltrichlorosilane (OTS) and mercapto ethanol were used to modify the surface functionality of platinum/titanium or platinum/tantalum bilayer patterns on thermally oxidized silicon wafers. The attachment of OTS to the exposed oxide region made it hydrophobic, while the anchoring of mercapto ethanol to the bilayer pattern turned it hydrophilic. This patterned hydrophobicity and hydrophilicity was exploited to preferentially deposit barium strontium titanate (BST) thin films on the patterned bilayers from an aqueous sol-gel solution. The combination of the SAMs and the sol-gel film formation method allowed direct patterned deposition of BST thin films, which could be useful for on-chip electronic applications. Wet oxygen annealing at 50 °C was sufficient to stabilize the deposited sol-gel coating without adversely affecting the functionality of the OTS, thus permitting multiple dip-coatings to obtain patterned films of a desired thickness. Heat treatment at 750 °C allowed densification and conversion of the sol-gel coatings to perovskite BST films.

Sol-Gel Processing of Low Dielectric Constant Nanoporous Silica Thin Films

Abstract : Tetramethyl ammonium silicate (TMAS) is known as a structuring agent in zeolite synthesis. We report its first use to prepare porous silica films for low k dielectric applications in microelectronics. A solution of TMAS 18.7 wt.% was spin coated on silicon substrates with a 3000 A thick thermal oxide. The spin coated films were subsequently heat-treated at 450 deg C to obtain porous silica. The use of TMAS solution without gelation led to films of only moderate porosity value of 10%. The addition of methyl lactate, a gelling agent, significantly increased film porosity and improved the pore size distribution. For example, 50% porosity and uniform pore size distribution (average pore size ^ 40 A) has been achieved. Dielectric constants (k) of our porous films are as low as 2.5.