Suil Lee

Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers

The growth conditions for InGaAs∕InGaAsP∕InP quantum dots (QDs) have been optimized and QDs of high luminescence efficiency and the room temperature operation of QD lasers emitting at ∼1.5μm have been demonstrated. Lattice-matched InGaAsP (λg=1.0–1.1μm) was used as a barrier layer for the InGaAs QDs and the emission wavelength was controlled by the QD composition. High-density InGaAs QDs with an areal density as high as 1.13×1011cm−2 have been grown. The integrated and peak intensity of the photoluminescence (PL) spectra at room temperature are as high as 25% and 10% of those at 10K, respectively. The room temperature PL peak intensity is about 50% that of a high-quality InGaAs∕InP quantum well. Room temperature, pulsed operation at ∼1.5μm has been achieved from broad area lasers with a 1mm cavity length. Threshold current density per QD stack of ∼430A∕cm2 is measured for the five-, seven-, and ten-stack QD lasers.

Photoluminescence and lasing characteristics of InGaAs∕InGaAsP∕InP quantum dots

The InGaAs quantum dots (QDs) were grown with InGaAsP(λg=1.0–1.1μm) barrier, and the emission wavelength was controlled by the composition of InGaAs QD material in the range between 1.35 and 1.65μm. It is observed that the lateral size increases and the height of the QDs decreases with the increase in relative concentration of trimethylgallium to trimethylindium supplied during InGaAs QD growth. It is seen that the higher concentration of group III alkyl supply per unit time leads to higher QD areal density, indicating that the higher concentration causes more QDs to nucleate. By optimizing the growth conditions, the QDs emitting at around 1.55μm were grown with an areal density as high as 8×1010cm−2. The lasing action between the first excited subband states at the wavelength of 1.488μm has been observed from the ridge waveguide lasers with five QD stacks up to 260K. The threshold current density of 3.3kA∕cm2 at 200K and a characteristic temperature of 118K were measured.

Formation of uniformly sized gold nanoparticles over graphene by MeV electron beam irradiation for transparent conducting films

Highly flexible, transparent, and conducting sheet was fabricated by decoration of uniformly sized gold nanoparticles (Au NPs) with high-density on large-area graphene by MeV electron beam irradiation (MEBI) at room temperature under ambient conditions. The Au NPs with an average size of 13.6 ± 3.5 nm were clearly decorated on the graphene after MEBI with an irradiation energy of 1.0 MeV. The sheet resistances of the Au NPs/graphene significantly decreased. For the Au NPs/trilayer graphene, the sheet resistance reached to ∼45 Ω/sq, and the optical transmittance was ∼90.2% which is comparable to that of conventional indium tin oxide film.

MeV Electron-Beam Induced Clusterization of Platinum Chloride on Graphene for Transparent Conductive Electrodes

The use of graphene-based transparent conductive electrodes critically depends upon the enhancement of electrical conductivity with a negligible loss of optical transmittance of graphene. Hence, the hybridization of graphene and metal nanostructures has been intensively investigated to improve electrical conductivity. Here we demonstrate clusterization of PtCl2 on graphene by a facile method, MeV electron-beam irradiation (MEBI) under ambient conditions, as characterized by scanning electron microscopy, transmittance electron microscopy, and resonant Raman spectroscopy. The workfunction difference between PtCl2 nanoclusters and graphene results in p-type doping of graphene, to achieve a reduced sheet resistance of 69.1 % with respect to that of pristine graphene while maintaining transmittance of 91.7 %. The mechanism of formation of PtCl2 nanoclusters on graphene is likely to be defect-mediated clusterization due to the high energy electron-beam.