Sumati Patil

Radiation induced synthesis and characterization of copper nanoparticles

Abstract Capped copper nanoclusterswere successfully synthesized by gamma radiolysis method by optimizing various conditions like metal ion concentration, polymer or surfactant concentration and pH. The increasing amount of capping agent was responsible for decrease in size as small as 17 nm of the metal clusters. The radiolytic method provides copper nanoparticles in fully reduced and highly pure state compared to other synthetic routes. Formation of copper nanoclusters (FCC) was confirmed by X-ray diffraction technique. UV-vis spectrophotometry was employed to examine changes in plasmon resonance absorption peaks of copper metal. The purity of copper particles was further confirmed by electron spin resonance studies. Transmission electron microscopy results revealed the particle size distribution from 17 to 80 nm. Electron diffraction pattern confirms FCC copper phase. The role of various parameters in the formation of stable copper clusters is discussed.

Studies on BaO particles in nanosize regime

Barium oxide nanosize particles were prepared using the wet chemical route. Various capping agents were used to arrest the growth. X-ray diffraction studies reveal particle size as low as 9 A in diameter, which is close to the Bohr exciton radius of BaO. However, changes in the optical absorption features arising from the confinement effect in the nanosize regime were not observed. These results were confirmed by fluorescence measurements. The calculations based on effective mass approximations indicate that the quantum confinement effects are not significant for particle sizes as small as 15 A.

Temperature Dependent Electron Transport Properties of Gold Nanoparticles and Composites: Scanning Tunneling Spectroscopy Investigations

Scanning tunneling spectroscopy (STS) is used for investigating variations in electronic properties of gold nanoparticles (AuNPs) and its composite with urethane-methacrylate comb polymer (UMCP) as function of temperature. Films are prepared by drop casting AuNPs and UMCP in desired manner on silicon substrates. Samples are further analyzed for morphology under scanning electron microscopy (SEM) and atomic force microscopy (AFM). STS measurements performed in temperature range of 33 °C to 142 °C show systematic variation in current versus voltage (I-V) curves, exhibiting semiconducting to metallic transition/Schottky behavior for different samples, depending upon preparation method and as function of temperature. During current versus time (I-t) measurement for AuNPs, random telegraphic noise is observed at room temperature. Random switching of tunneling current between two discrete levels is observed for this sample. Power spectra derived from I-t show 1/f2 dependence. Statistical analysis of fluctuations shows exponential behavior with time width τ ≈ 7 ms. Local density of states (LDOS) plots derived from I-V curves of each sample show systematic shift in valance/conduction band edge towards/away from Fermi level, with respect to increase in temperature. Schottky emission is best fitted electron emission mechanism for all samples over certain range of bias voltage. Schottky plots are used to calculate barrier heights and temperature dependent measurements helped in measuring activation energies for electron transport in all samples.

Investigation of Disorder in Mixed Phase, sp2–sp3 Bonded Graphene-Like Nanocarbon

Disorder in a mixed phase, sp2-sp3 bonded graphene-like nanocarbon (GNC) lattice has been extensively studied for its electronic and field emission properties. Morphological investigations are performed using scanning electron microscopy (SEM) which depicts microstructures comprising of atomically flat terraces (c-planes) with an abundance of edges (ab planes which are orthogonal to c-planes). Scanning tunneling microscopy (STM) is used to observe the atomic structure of basal planes whereas field emission microscopy (FEM) is found to be suitable for resolving nanotopography of edges. STM images revealed the hexagonal and non-hexagonal atomic arrangements in addition to a variety of defect structures. Scanning tunneling spectroscopy is carried out to study the effect of this short-range disorder on the local density of states. Current versus voltage (I-V) characteristics have been recorded at different defect sites and are compared with respect to the extent of the defect. As sharp edges of GNC are expected to be excellent field emitters, because of low work function and high electric field, enhancement in current is observed particularly when applied electric field is along basal planes. Therefore, it is worthwhile to investigate field emission from these samples. The FEM images show a cluster of bright spots at low voltages which later transformed into an array resembling ledges of ab-planes with increasing voltage. Reproducible I-V curves yield linear Fowler-Nordheim plots supporting field emission as the dominant mechanism of electron emission. Turn on field for 10 μA current is estimated to be ~3 V/μm.