Sun Daoheng

Electrohydrodynamic direct-writing of conductor-insulator-conductor multi-layer interconnection

Key Program of the National Natural Science Foundation of China [51035002]; National Natural Science Foundation of China [51305373]; Specialized Research Fund for the Doctoral Program of Higher Education of China [20120121120035]

Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl16

PANI/ZnPcCl16 (polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine) powders were vacuum co-deposited onto Si substrates, where Pt interdigitated electrodes were made by micromachining. The PANI/ZnPcCl16 films were characterized and analyzed by SEM, and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine (Cl2) gas. The results showed that powders prepared with a stoichiometric ratio of (ZnPcCl16)0.6(PANI)0.4 had a preferential sensitivity to Cl2 gas, superior to those prepared otherwise; the optimal vacuum co-deposition conditions for the films are a substrate temperature of 160 °C, an evaporation temperature of 425 °C and a film thickness of 75 nm; elevating the operation temperature (above 100 °C) or increasing the gas concentration (over 100 ppm) would improve the response characteristics, but there should be upper levels for each. Finally, the gas sensing mechanism of PANI/ZnPcCl16 films was also discussed.

Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure

A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 μm in the prototype design. The bubbles/voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5 × 10−8 atm cc s−1.